Kim, So-Young (S.Y.Kim)

Post Doctor

82-54-279-5422

Education

2014 – 2020: Integrated M.S & Ph.D Course, Dept. of MSE, GIST

2010 – 2014 : B.S., Electrical Engineering and Computer Science Concentration, GIST

Research Interest

Fabrication and analysis of emerging device

Multi-valued logic device and circuit

Publication

Journals

  1. S.M.Kim, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.W.Heo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive Analysis of physical defects in a graphene channel using Amplitude Modulated Discharge Current," Submitted to Nature Electronics (2021).
  2. S.Y.Kim, K.Y.Kim, A.R Kim, H.I.Lee, Y.S. Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H. Lee*, "Operation principles of ZnO/Al2O3-AlDMP/ZnO channel ternary thin film transistor," Submitted to Science Advances (2021).
  3. S.Y.Kim, J.A.Yoo, H.J. Hwang and B.H. Lee*, "Demonstration of programmable ternary graphene field-effect transistor using ferroelectric polymer doping," Submitted to Organic Electronics (2021).
  4. T.J.Yoo, S.Y.Kim, M.G.Kwon, C.H.Kim, K.E.Chang, H.J.Hwang and B.H. Lee*, "A facile method to improve the detectivity of graphene/p-type silicon heterojunction photodetector," In revision, Laser and Photonics Reviews (2021).
  5. T.H.Kim, W.J.Park, S.Y. Oh, S.Y. Kim, N. Yamata, H. Kobayashi, H.Y. Jang, J.H. Nam, H. Habazaki, B.H. Lee, B.J. Cho, "Unveiling the role of Al2O3 interlayer in indium gallium zinc oxide transistors," In press, Physica Status Solidi A, (2021).
  6. J.W. Um. S.Y. Kim, B.H. Lee, J.B. Park, S.H.Jeong, "Direct writing of graphite thin film by laser-assisted chemical vapor deposition," Carbon 169, pp.163-171 (2020).
  7. J.E. Kim, T.H. Kim, S.Y. Oh, J.H. Nam, H.Y. Jang, Y.H. Kim, N. Yamada, H. Kobayashi, S.Y. Kim, B.H.Lee, H. Habazaki, W.J. Park, B.J. Cho, "Al2O3 induced sub-gap doping on IGZO channel for the detection of infrared light," In press, ACS Applied Electronic Materials (2020)
  8. S.Y.Kim, J.A. Ryou, M.J. Kim, K.Y.Kim, Y.S.Lee, S.M.Kim. H.J.Hwang, Y.H.Kim, B.H.Lee*, "Performance degradation in graphene-ZnO barristors due to graphene edge contact," ACS Applied Materials and Interfaces 12(25), pp.28768-28774 (2020).
  9. S.C.Kang, S.Y.Kim, S.K.Lee, K.Y.Kim, B. Allouche, H.J.Hwang, and B.H. Lee*, "Channel defect profiling and passivation for ZnO thin film transistors," Nanomaterials 10(6), pp.1-8 (2020).
  10. M.Son, S.S.Chee, S.Y.Kim, W.Lee, Y.H.Kim, B.Y.Oh, J.Y.Hwang, B.H.Lee, M.H.Ham, "High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition ",  Carbon 159, p.579(2020).
  11. M.Son, H.Kim, J.Jang, S.Y.Kim, H.C.Ki, B.H.Lee, I.Kim, M.H.Ham, "Low-power complementary logic circuit using polymer electrolyte-gated graphene switching devices", ACS Applied Materials & Interfaces, 11, 47247-47252, (2019).
  12. H.J.An, H. Hong, Y.R.Jo, J.M.Lee, H.J.Yoon, S.Y. Kim, J.S. Song, S.Y. Jeong, B.H.Lee, B.J.Kim, S.G.Jung, T.S.Park, S.M.Kim, C.W.Bark, S.W.Kim, T.Y. Koo, K.T.Ko,, B.J.Kim, S.H.Lee, "Reversible magnetoelectric switching in multiferroic three-dimensional nanocup heterostructure films,” NPG Asian Materials, 11(68), 1-10, (2019).
  13. Y.J. Yoo, Y.J. Kim, S.Y. Kim, J.H. Lee, J.H.Ko, J.W.Lee, K.J. Kim, B.H.Lee, Y.M. Song, "Mechanically Robust Antireflective Moth-eye Structures with a tailored coating of dielectric materials,” Optical Materials Express, 9(11), 4178-4186, (2019).
  14. J.S.Song, K.S.Choi, S.J.Yoon, W.B.Sohn, S.P.Hong, T.H.Lee, H.J.An, S.Y.Cho, S.Y.Kim, D.H.Kim, T.M.Kim, S.Y.Jeong, C.W.Bark, B.H.Lee, S.D.Bu, H.W.Jang, C.H.Jeon, S.H.Lee, "Enhancement of Ferroelectric Properties of Superlattice-Based Epitaxial BiFeO3 Thin Films via Substitutional Doping Effect," J. of Physical Chemistry C, 123(18), pp.11564-11571 (2019).
  15. S.Y. Kim, J.W. Hwang, Y.J. Kim, H.J. Hwang, M.W. Son, N. Revannanth, M.H.Ham, K.J. Cho, B.H. Lee*, “ Threshold Voltage Modulation of Graphene-ZnO Barristor Using a Polymer Doping Process,” Advanced Electronic Materials, 5(7), 1800805, (2019).
  16. K.E.Chang, C.H.Kim, T.J.Yoo, M.K.Kwon, S.Heo, S.Y.Kim, Y.Hyun, J.I.Yoo, H.C.Ko, B.H. Lee*, “ High-Responsivity Near-Infrared Photodetector Using Gate-modulated Graphene/Germanium Schottky Junction,” Advanced Electronic Materials, 5(6), 1800957 (2019).
  17. H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee *, “ Piezoelectrically modulated touch pressure sensor using a graphene barristor,” Jpn. J. Appl. Phys.58(SB), SBBH03(2019).
  18. S.Y.Kim, M.B. Kim, H.J.Hwang, B. Allouche, B.H.Lee *, “ Chemically doped graphene based ternary field effect transistors,” Jpn. J. Appl. Phys.  58(SB), SBBH04 (2019).
  19. S.W. Heo, S.M. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S.H. Kang, B.H. Lee*, "Ternary full adder using multi-threshold graphene barristor," IEEE Electron Device Letters 39(12), p.1948 (2018).
  20. S.W.Heo, H.I.Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y.Kim, J.H.Kim, M.H. Yoon, B.H.Lee*, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications," Annalen der Physik ,530(10), p.1800224 (2018).
  21. S. Seo, H. Choi, S.Y. Kim, J. Lee, K. Kim, S. Yoon, B.H. Lee, S. Lee , “Growth of centimeter-scale monolayer and Few-layer WSe2 thin films on SiO2/Si substrates via pulsed laser deposition," Advanced Materials Interfaces 5(20), p.1800524(2018).
  22. J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.-Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “ Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), p. 5952 (2018).
  23. K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee*, “Gate controlled graphene-silicon Schottky junction photodetector," Small  14(28), p. 1801182(2018).
  24. S.Y.Kim, Y.J.Kim, U.Jung, B.H.Lee*, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," Scientific Reports  8(1), pp.2992 (2018).
  25. H.J. Hwang, K.E. Chang, W.B.Yoo, C.H.Shim, S.K.Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee*, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale  9, p.2442 (2017).
  26. Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports 6, p.39393 (2016).
  27. B.H.Lee*, H.J.Jwang, K.E.Chang, Y.J.Kim, S.Y.Kim, Y.B.Yoo, “그래핀 소자기술," The Mag. of the IEIE (2015). (invited)

Conferences

  1. Y.S.Lee, S.M.Kim, H.I.Lee, S.Y.Kim, C.H.Kim, H.J.Hwang, and B.H.Lee*, "Low Temperature and Parameter Controllable ZnO-DNTT Antiambipolar Transistor and Its Ternary Application" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
  2. S.Y.Kim, S.R.Lee, S.M.Kim, Y.S.Lee, H.I.Lee, H.W.Lee, K.Kim, H.J.Hwang, and B.H.Lee*, "A study on the electrical characteristic of ultra-thin oxide semiconductor field-effect transistor" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
  3. S.M.Kim, H.I.Lee, S.Y.Kim, Y.S.Lee, H.J.Hwang, and B.H.Lee*, "A Study on the Degradation Mechanism of Vertical Stacked ZnO TFT" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
  4. H.I.Lee, Y.S.Lee, S.M.Kim, S.Y.Kim, H.J.Hwang, and B.H.Lee*, "Demonstration of frequency doubler using ZnO-DNTT antiambipolar transistor with high peak-to-valley ratio (>106)," Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
  5. Kiyung Kim, Sunmean Kim, Yongsu Lee, Daeyeon Kim, So-Young Kim, Seokhyeong Kang, Byoung Hun Lee*, "Extreme Low Power Technology using Ternary Arithmetic Logic Circuits via Drastic Interconnect Length Reduction", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2020)
  6. H.W.Lee, S.Y.Kim, S.M.Kim, H.I.Lee, Y.S.Lee, H.J.Hwang and B.H.Lee*, "A study on the atomic layer deposited tin oxide channel for thin film transistor", NANO KOREA, (2020).
  7. Y.S.Lee, H.J.Kwon, H.I.Lee, S.Y.Kim, S.M.Kim, K.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of p-type ternary logic device and its circuit application", NANO KOREA, (2020).
  8. A.R.Kim, S.Y.Kim and B.H.Lee*, "The study of the operation mechanism for ZnO-based ternary device through electrical analysis", NANO KOREA, (2020).
  9. S.Y.Kim, K.Kim, A.R.Kim, H.I.Lee, Y.S.Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of stack channel ternary logic device depending on the carrier concentration of ZnO", NANO KOREA, (2020).
  10. 유태진, 김소영, 김시현, 권민규, 황현준, 이병훈, "화학적 도핑 방법을 이용한 그래핀/p-Si 쇼트키 접합 조절 연구", The 27th Korean Conference of Semiconductors (KCS), (2020)
  11. 이용수, 김채은, 김소영, 김시현, 이호인, 김승모, 김기영, 황현준, 이병훈, "삼진상보보완회로를 위한 그래핀 기반의 P-type 삼진 로직 소자", The 27th Korean Conference of Semiconductors (KCS), (2020)
  12. 김소영, 김소륜, 이호인, 이용수, 김기영, 이해원, 김채은, 황현준, 이병훈, "ZnO 기반 삼진 로직 소자의 중간 전류 레벨 조절 연구", The 27th Korean Conference of Semiconductors (KCS), (2020)
  13. 김승모, 김소영, 이호인, 이용수, 유태진, 김시현, 황현준, 이병훈, "화학적 토핑 방법을 이용한 그래핀 일함수 조율의 전기적 특성 분석", The 27th Korean Conference of Semiconductors (KCS), (2020)
  14. 황현준, 김소영, 이상경, 이병훈, "화학적 도핑에 따른 대면적 그래핀 열전 소자 특성 분석", The 27th Korean Conference of Semiconductors (KCS), (2020)
  15. 이호인, 김소영, 김승모, 이용수, 황현준, 이병훈, "Implementation of pseudo n-type ternary analog to digital converter using ZnO nanosheet stack channel field-effect-transistor", The 27th Korean Conference of Semiconductors (KCS), (2020)
  16. Kiyung Kim, So-Young Kim, Hyeon Jun Hwang, Byoung Hun Lee, "Low Device Count Ternary Full Adder Using Multi-threshold Graphene Barristor", Nano Convergence Conference (NCC), (2020) Best poster award.
  17. Hyeon Jun Hwang, Sang Kyung Lee, So-Young Kim, Byoung Hun Lee, "Electrical characterization of chemically doped graphene Thermoelectric device", Nano Convergence Conference (NCC), (2020)
  18. S.Y.Kim, Y.Lee, C.Kim, H.I.Lee, K.Kim, H.J.Hwang, B.H.Lee, "Dual Channel Ternary Graphene Barristor with Tunable Schottky Barrier Height controlled by Chemical Doping", 50th IEEE Semiconductor Interface Specilaists Conference (SISC), (2019)
  19. T.J.Yoo, S.Y.Kim, C.Kim, M.G.Kwon, K.E.Chang, H.J.Hwang, B.H.Lee, "Dark current reduction for the chemically doped graphene/p-Si Schottky photodetector", 50th IEEE Semiconductor Interface Specilaists Conference (SISC), (2019)
  20. B.H.Lee, S.Y. Kim, K.Y.Kim, H.I.Lee,  S.HKang, M.M.Sung, "Recent progress towards ternary logic devices for extreme low power architecture," Presented at Semicondoutor Interface Specialist Conference, 2019. (Invited)
  21. Yongsu Lee, Chaeeun Kim, So-Young Kim, Kiyung Kim, Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Cihyun Kim, Hyeon Jun Hwang, and Byoung Hun Lee, "Structural improvement of DNTT graphene barristor by vertical drain electrode", Nano Korea, (2019)
  22. Chaeeun Kim, So-Young Kim, Yongsu Lee, Kiyung Kim, Byoung Hun Lee, "Contact Doping Layer for Graphene/DNTT Barristor", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)
  23. Kiyung Kim, Sunwoo Heo, So-Young Kim, and Byoung Hun Lee, "Graphene Barristor Model for Ternary Logic Application", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)
  24. So-Young Kim, Sunwoo Heo, Kiyung Kim, Myungwoo Son, Seung-Mo Kim, Ho-In Lee, Yongsu Lee, Hyeon Jun Hwang, Moon-Ho Ham, Byoung Hun Lee, "Demonstration of ternary devices and circuits using dual channel graphene barristors", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2019)
  25. 김민재, 김소영, 이용수, 김승모, 이병훈, "Edge Contact Length가 그래핀-ZnO 배리스터에 미치는 전기적 특성 분석", The 26th Korean Conference on Semiconductors (KCS), (2019)
  26. 권민규, 장경은, 김시현, 김소영, 유태진, 이병훈, "화학적 도핑을 적용한 그래핀-Ge 기반 광검출 소자의 암전류 감소", The 26th Korean Conference of Semiconductors (KCS), (2019)
  27. 이용수, 김승모, 김소영, 이호인, 허선우, 이병훈, "그래핀 성장 조건에 따른 그래핀/구리 배선의 전자이주현상 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)
  28. So-Young Kim, Kyoung Eun Chang, Hyeon Jun Hwang and Byoung Hun Lee, "The study of graphene depending on surface property of substrate", Nano Convergence Conference (NCC), (2019)
  29. Sunwoo Heo, Kiyung Kim, Seung-Mo Kim, Ho-In Lee, Hyeji Lee, So-Young Kim, Byoung Hun Lee, "Insight for optimization of graphene barristor based devices and circuits", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
  30. So-Young Kim, Yongsu Lee, Jae Young Jeong, Seung-Mo Kim, Byoung Hun Lee, "Improvement in Electrical Characteristic of ZnO-graphene Barristor by Edge Contact Length Controlling", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018) Best poster award.
  31. Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Yongsu Lee, So-Young Kim, Tae Jin Yoo, Byoung Hun Lee, "Schottky barrier height extraction of p-type semiconductor barristor", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)
  32. So-Young Kim, Min Beom Kim, Hyeon Jun Hwang, Billal Allouche, and Byoung Hun Lee, “Ternary graphene field effect transistors using chemically doped graphene”, Int. Conf. on Solid State Device and Materials (SSDM), (2018)
  33. Seung Mo Kim, Sunwoo Heo, Hyeji Lee, Ho In Lee, Kiyung Kim, Yun Ji Kim, So-Young Kim, Billal Allouche, and Byoung Hun Lee, “Vth control in p-type graphene barristor using a polymer doping process”, Int. Conf. on Solid State Device and Materials (SSDM), (2018)
  34. B.H.Lee, Y.J.Kim, T.J.Yoo, S.Y.Kim, H.Jun.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," IUMRS-ICAM, Daejon, Korea (2018). Invited
  35. So-Young Kim, Cihyun Kim, Ho-In Lee, Kiyung Kim, Kyoung Eun Chang, Sunwoo Heo, Byoung Hun Lee, "Effect of deposition temperature of ZnO(:N) for electrical characteristic of graphene barristor", Nano Korea, (2018).
  36. Yongsu Lee, So-Young Kim, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Sunwoo Heo, Byoung Hun Lee, "Contact resistance properties for Nickel-n-type Silicon using graphene interlayer", Nano Korea, (2018).
  37. Sunwoo Heo, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Kiyung Kim, Tae Jin Yoo, So-Young Kim, Yongsu Lee, Byoung Hun Lee, "Impact of charged impurities on graphene barristor", Nano Korea, (2018).
  38. B.H.Lee, Y.J.Kim. T.J.Yoo, S.Y.Kim, H.J.Hwang, S.K.Lee, "Electronic device applications of graphene for future semiconductor technology," Graphene 2018, Dresden, Germany (2018). Invited
  39. 김민범, 김소영, 이병훈, "UV/오존 노출 후 변화된 그래핀 FET의 전기적 특성 분석", The 25th Korean Conference on Semiconductors (KCS), (2018)
  40. 김소영, 김민범, 전은기, 정경준, 김윤지, 이병훈, "화학적 도핑 방법을 이용한 그래핀 pn 접합의 형성", The 25th Korean Conference on Semiconductors (KCS), (2018), Best poster award.
  41. 김기영, 허선우, 김소영, 이혜지, 김윤지, 이호인, 김승모, 이병훈, "간단한 그래핀 패턴을 이용한 저항 제작 및 특성 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)
  42. 이혜지, 김윤지, 한경주, 김소영, 허선우, 김지환, 윤명한, 이병훈, "전하 주입 층을 이용한 그래핀/DNTT 배리스터의 전기적 특성 조절", The 25th Korean Conference on Semiconductors (KCS), (2018)
  43. So-Young Kim, Ji-Ae Yoo, Tae Jin Yoo, Yun Ji Kim, Sang Kyung Lee, Byoung Hun Lee, "Control of graphene doping using an interfacial oxide layer", The 4th International Symposium on Hybrid Materials and Processing (HyMaP), (2017)
  44. 김소영, 김민범, 김윤지, 이혜지, 김기영, 이병훈, "유기박막을 이용한 그래핀 도핑 방법 연구", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2017)
  45. 이혜지, 김윤지, 한경주, 김소영, 허선우, 김지환, 윤명한, 이병훈, "그래핀 도핑을 이용한 그래핀/DNTT 접합의 쇼트키 장벽 조절", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2017)
  46. 김소영, 김윤지, 황현준, 허선우, 한경주, 이선규, 이혜지, 이병훈, "Threshold voltage control of chemically doped graphene barristor", NANO Convergence Conference (2017).
  47. 허선우, 심창후, 김윤지, 김소영, 김기영, 이용수, 이상경, 이병훈, "그래핀 고정저항에 의한 그래핀/ZnO:N 배리스터의 동작특성 열화연구", The 24th Korean Conference on Semiconductors (KCS), 2017, Best poster award.
  48. 김윤지, 김소영, 허선우, 심창후, 이상경, 장경은, 이병훈, "그래핀/금속 접합 계면층에 따른 그래핀의 Fermi-level 변화", The 24th Korean Conference on Semiconductors (KCS), 2017
  49. 김소영, 김윤지, 심창후, 허선우, 황현준, 한경주, 이선규, 이병훈, "화학적 도핑을 이용한 그래핀 - ZnO:N 배리스터의 문턱전압 조절", The 24th Korean Conference on Semiconductors (KCS), 2017, Best poster award.
  50. So-Young Kim, Yun Ji Kim, Chang-Hoo Shim, Jinwoo Noh, Byoung Hun Lee, "Threshold voltage control of graphene barristor", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2016), Best poster award.
  51. J.A.Yoo, J.H.Yang, S.Y.Kim, B.H.Lee, “Direct Analysis of the Surface potential of chemical doped graphene using Electrostatic Force Microscopy", Nano Korea, (2016), Best poster award.
  52. C.H.Shim, S.W. Heo, J.W.Noj, Y.J.Kim, S.Y.Kim, A.K.Khan, B.H.Lee, "Design of Ratioless Ternary Inverter using Graphene Barristor", IEEE ISMVL, (2016).
  53. 심창후, 서광하, 허선우, 노진우, 김소영, 이병훈, "그래핀 배리스터를 이용한 화소회로 설계", The Korean Society of Semiconductor & Display Technology(KSDT), (2016)
  54. 김윤지, 김소영, 조천흠, 이상경, 장경은, 이병훈, "열처리 조건에 따른 그래핀/금속 접합 변화를 이용한 그래핀 전계효과 소자", The Korean Society of Semiconductor & Display Technology(KSDT), (2016)
  55. 김윤지, 김소영, 정욱진, 박우진, 이상경, 이병훈, "고압수소열처리 조건에 따른 그래핀 전계효과소자의 특성 최적화", 23rd Korean Conference on Semiconductors(KCS), 2016
  56. 김소영, 김윤지, 이상경, 황현준, 허선우, 장경은, 조천흠, 이병훈, "질소도핑된 ZnO를 이용한 그래핀 FET의 On-Off 특성 향상", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.
  57. Abdul Karim Khan, Jinwoo Noh, Chang-Hoo Sim, Yun Ji Kim, So-Young Kim and Byoung Hun Lee, "MoS2 Metal insulator transition based modeling of memcapacitor", 23rd Korean Conference on Semiconductors(KCS), 2016
  58. Yun Ji Kim, So-Young Kim, Ukjin Jung, Sang Kyung Lee, Kyoung Eun Chang, Chunhum Cho, and Byoung Hun Lee, "Controlling doping profile of graphene under Pt strip using high pressure hydrogen and nitrogen anneal ", Nano convergence Conference 2016, (2016)
  59. Y.J. Kim, S.Y. Kim, U. Jung, S.K. Lee, K.E. Chang, C. Cho and B.H. Lee, "Fermi level of graphene under a metal contact modulated by high pressure hydrogen anneal", SISC, (2015)
  60. 이병훈, 장경은, 김윤지, 유태진, 심창후, 김소영, 이상경, "Electronic Device Applications of Graphene", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2015) (Invited)
  61. 심창후, 노진우, 김윤지, 김소영, Khan Abdul Karim, 이병훈, “Complementary Graphene Barristor의 설계", Electronic Materials and Nanotechnology for Green Environment (ENGE), (2015), Best poster award.
  62. So-Young Kim, Yun Ji Kim, Ukjin Jung, and Byoung Hun Lee, "Fermi Pinning Effects at Metal/High-k Dielectric Stack Integrated for Top Gate Graphene Field Effect Transistors", IUMRS, (2015), Best poster award.
  63. So-Young Kim, Yun Ji Kim, Ukjin Jung, Byoung Hun Lee, "Weak Pinning Effects at Metal/High-k Dielectric Stack Integrated for Top Gate Graphene Field Effect Transistors", Nano Korea, (2015), Best poster award.
  64. 장경은, 노진우, 심창후, 김소영, 이병훈, “저전력 Barristor 소자 집적 공정 개발과 특성”, 22nd Korean Conference on Semiconductors(KCS), 2015
  65. 심창후, 노진우, 장경은, 김윤지, 김소영, Abdul Karim Khan, 이병훈, “Graphene Barristor를 이용한 Ternary Inverter”, 22nd Korean Conference on Semiconductors(KCS), 2015
  66. 노진우, 심창후, 김소영, Abdul Karim Khan, 이병훈, “Cross point array의 sneak path 문제 최소화를 위한 멤리스터 소자특성연구”, 22nd Korean Conference on Semiconductors(KCS), 2015
  67. 정욱진, 김윤지, 김용훈, 김소영, 이병훈, “Top gate graphene FET의 Fermi level과 계면결함 밀도의 상관관계 연구”, 22nd Korean Conference on Semiconductors(KCS), 2015, Best poster award.
  68. J.Noh, K.E.Chang, C.H.Shim, S.Y.Kim, B.H.Lee, “Performance prospect of Graphene Barristor with Hgih on-off Ratio (~107)", Proc. of Silicon Nanoworkshop, (2014).

Patents/Book

  1. 이병훈, 김소영, 김윤지, 심창후 "쇼트키 접합 그래핀 반도체를 이용한 삼진 배리스터"  US Patent 10,243,076 (2019-03-26) [사사: 글로벌프론티어사업, 미래소재디스커버리 사업]
  2. 이병훈, 이용수, 김소영 "스페이서 층이 있는 이종 접합 기반의 음미분저항 소자" 국내출원번호, 2020-0033836 (2020.03.19), 2020.
  3. 이병훈, 김기영, 김소영 "다중 문턱 전압 소자를 기반으로 하는 4진법 논리 인버터" 국내출원번호, 2019-0169058 (2019.12.17), 2019.
  4. 이병훈, 김소영, 김기영, "그래핀 반도체 접합소자" 국내출원번호, 2019-0157819 (2019.11.29), 2019.
  5. 이병훈, 김소영, 함문호, 윤명한, 지상수, 이원준, "이차원 물질 층을 포함하는 광검출기의 제조방법", ", 국내출원번호, 2018-0116078, (2018.09.28), 2018.
  6. Byoung Hun LEE, Yun Ji KIM, So-Young KIM, " GRAPHENE TRANSISTOR AND TERNARY LOGIC DEVICE USING THE SAME (그래핀 트랜지스터 및 이를 이용한 3진로직 소자) " 해외출원번호, US 15/424154, 2017. [사사: 미래소재디스커버리사업, 정보전자디바이스산업원천기술개발사업]
  7. 이병훈, 김소영, 김윤지, 심창후 "그래핀-반도체 쇼트키접합을 이용한 터너리 스위치, Ternary switch using a graphene-semiconductor Schottky junction" 국내출원번호, 2016-0150019 (2016.11.11), 2016. [사사: 글로벌프론티어사업, 미래소재디스커버리 사업]
  8. 이병훈, 김윤지, 김소영, " 그래핀 트랜지스터 및 이를 이용한 3진논리 소자, " 국내출원번호, 10-2016-0015088, 2016. [사사: 창의소재디스커버리사업, 정보전자디바이스산업원천기술개발사업]
Other Expertise

Technical Skills

2D material based device fabrication

Graphene Transfer process 

Photo-Lithography process

Device modeling and circuit simulation 

Course Work

Ph. D

​Probability and Random Process

Discrete Mathematics

Device physics for nanoscale solid state devices

Nano Materials and Devices

Theory of Semiconductor Devices

Introduction to Materials Science and Engineering

Introduction to Electrical and Mechanical Engineering for Medical Applications

Instrumental Analysis

Mathematical Analysis

Organic Materials for Electronics and Photonics I

Semiconductor Processing

Start Up Simulation