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Silicon electronics


We aim to develop novel characterization methods for high-performance silicon devices using state-of-the-art equipment. Reliability of scaled silicon device - stress characterization using various pulse patterns including DC, AC, and PRBS (pseudorandom bit sequence), reliability of high-k dielectric, and time domain reflectometry (TDR) for high accuracy characterization of leaky dielectric are actively researching.

Random/AC stress characterization of MOSFETs

Intrinsic reliability of high-k dielectric

Time domain reflectometry for leaky dielectric