Cho, Chunhum (C.Cho)
Ph.D 2010-2017
- Current affiliation
- 2021 -, Samsung Electronics
- Education
since 2010 : Ph.D., Dept. of Nanobio Materials and Electronics, GIST
2008 – 2010 : M.S., Dept. of MSE, GISTT
2004~2008 : B.S., Dept. of MSE, Kyungpook national university
- Research Interest
Large area graphene process using laser annealing system
Graphene device integration
Raman analysis on graphene
Electrical characterization of graphene device
- Publication
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Journals
28 S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee*, "Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics,"IEEE Electron Device Letters 40(11), 171 6(2019).
27 S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee*, " Advantages of a buried-gate structure for graphene field-effect transistor ,” Semiconductor Science and Technology 34, p.055010 (2019).
26 H.J. Hwang, Y.S. Lee, C. Cho, B.H. Lee*, “ Facile process to remove PMMA residue after graphene transfer,” AIP Advances 8(10), p.105326(2018).
25 S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press, Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).
24 C.Cho, S.K Lee, TJ.Yoo, S.W.Heo, H.J.Hwang, C.G.Kang, M.H.Ham, B.H.Lee*, “Pulsed KrF laser assisted direct deposition of graphitic capping layer for Cu interconnect,” Carbon 123, pp. 307-310(2017).
23 H.J. Hwang, K.E. Chang, W.B.Yoo, C.H.Shim, S.K.Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee*, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale 9, p.2442 (2017).
22 Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports 6, p.39393 (2016).
21 J.S.Jang, M.W.Son, S.K.Chung, K.H.Kim, C.Cho, B.H.Lee, M.H.Ham, “Low-temperature-grown continuous graphene films from liquid benzene by chemical vapor deposition at ambient pressure," Scientific Report, 5, p.17955 (2015).
20 W.J.Park, Y.H.Kim, U.J. Jung, J.H.Yang, C. Cho, Y.J.Kim, S.M.N Hasan, H.G.Kim, H.B.R.Lee, B.H.Lee*, “Unipolar WS2 Field Effect Transistors using Fermi level de-pinning contact metals," Advanced Electronic Materials, p.1500279 (2015).
19 C.Cho, S.K.Lee, J.Noh, W.Park S.C.Lee, Y.G.Lee, H.J.Hwang, M.Ham, B.H.Lee*, "Contact resistance improvement by the modulation of area to peripheral length ratio of graphene contact pattern," Applied Physics Letters, 106(21), p.213107 (2015).
18 S.C.Lee, S.K.Lee, C.G.Kang, C.Cho, Y.G.Lee, U.J.Jung, and B.H.Lee*, "Graphene transfer in vacuum yielding a high quality interface," Carbon, 93, p.286-294 (2015).
17 Y.G.Lee, C.G.Kang, C.Cho, Y.H.Kim, H.J.Hwang, B.H.Lee*, “Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using short pulse I-V method,” Carbon, 60, p.453-460 (2013).
16 H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack,” Microelectronics Engineering, 109, p.87-89, Sep. (2013).
15 C.Cho, Y.G.Lee, U.Jung, C.G.Kang, S.K.Lim, H.J.Hwang, H.J.Choi, B.H.Lee*, “Correlation between the hysteresis and the initial defect density of graphene,” Appl. Phys. Lett., 103, p.083110, Aug. (2013).
14 S.H. Kim, J.B. Park , J.Y. Woo , C. Cho , W.T. Lee , J.H. Shin , G. Choi , S.S. Park , D.S. Lee , B.H. Lee , H. Hwang,"Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories,” Microelectronics Engineering, 107, p.33-36, Jul. (2013).
13 W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology, 24, 475501 (2013).
12 H.J. Hwang, J.H.Yang, Y.G.Lee, C.Cho, C.G.Kang, S.C.Kang, W.Park, and B.H.Lee*, “Ferroelectric Polymer Gated Graphene Memory with Very High Speed Conductivity Modulation,” Nanotechnology, 24, on-line published (2013). Also selected as a paper of particular interest.
11 Y.G.Lee, Y.J.Kim, C.G.Kang, C.Cho, H.J.Hwang, U.J. Jung, B.H.Lee*, "Influences of extrinsic factors on the accuracy of mobility extraction for graphene MOSFETs," Appl. Phys. Lett. 102(9), 093121 (2013).
10 C.G.Kang, S.K.Lim, S.C.Lee, S.K.Lee,C.Cho, Y.G.Lee, H.J.Hwang, Y.H. Kim, H.J.Choi, S.H.Choe, M.H.Ham and B.H.Lee*, “Effects of Multi-Layer Graphene Capping on Cu interconnects," Nanotechnology, 24, 115707, (2013). , Also selected as article of particular interest.
9 C.G.Kang, Y.G.Lee, S.K.Lee, E.J,Park, C.Cho, S.K.Lim, H.J.Hwang,H.J.Chung, S.Seo, B.H.Lee*, "Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors", Carbon, 53, p.182-187 (2013).
8 S.K. Lee, C.G.Kang, Y.G.Lee, C.Cho, E.J.Park, H.J.Chung, S.Seo, H.D.Lee, B.H. Lee*, "Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices", Carbon, 50(11), p.2046, Sep. 2012.
7 S.C. Lee, J.-S. Yeo, Y.S. Ji, C. Cho, D.Y. Kim, S.I. Na, B.H. Lee, and T. Lee, " Flexible organic solar cells composed of P3HT:PCBM using chemically doped graphene electrodes", Nanotechnology, 23, p.344013, Aug. 2012.
6 S.H. Kim, J.B. Park, S.J. Jung, W.T. Lee, J.Y.Woo, C.Cho, M. Siddik, J.H. Shin, B.H.Lee, H.Hwang, “Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations,” Appl. Phys. Lett., 99(19),192110,Nov.,2011.
5 C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee*, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment," IEEE Elec. Dev. Lett. 32(11), p.1591, Sep. 2011.
4 H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, C.G.Kang, H.Hwang, B.H.Lee*, “Electrical Characteristics of Wrinkle-Free Graphene Formed by Laser Graphitization of 4H-SiC,” Appl. Phys. Lett., 99, 082111 2011., Also, published in Virtual J. of Nanoscale Science and Technology, 24(11), Sep. 2011.
3 C. G. Kang, J.W. Kang, S.K. Lee, S.Y. Lee, C.H. Cho, H.J. Hwang, Y.G. Lee, J. Heo, H.-J. Chung, H. Yang, S. Seo, S.-J. Park, K.Y. Ko, J. Ahn and B.H. Lee*, "Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask,” Nanotechnology, 22, p.295201, May. 2011.
2 Y. H. Kahng, S.C. Lee, M. Choe, G. Jo, W.J. Park, J.W. Yoon, W.-K. Hong, C. Cho, B.H. Lee, and T. Lee, "A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks", Nanotechnology, 22, 045706, Jan. 2011.
1 B.H.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, and H.Hwang, "Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications, " J. Nanoscience and Nanotechnology 11, 1, p.256-261, Jan. 2011.
Conferences
국제 39 Y. J. Kim, H. J. Lee, K. E. Chang, C. Cho, S. K. Lee, B. H. Lee, "Fermi level modulation at the interface of graphene and metal," Silicon Nanoworkshop (SNW), (2017).
국제 38 K.H. Seo, J.H. Yang, J.A. Yoo, H.J. Hwang, K.E. Chang, C.H. Shim, S.K. Lee, C. Cho, Y.J. Kim, and B.H.Lee, "Barrier height reconfiguration of graphene/ZnO:N barristor using Ferroelectric polymer", IEEE IPFA, (2016) , Best poster award.
국내 37 김윤지, 김소영, 조천흠, 이상경, 장경은, 이병훈, "열처리 조건에 따른 그래핀/금속 접합 변화를 이용한 그래핀 전계효과 소자", The Korean Society of Semiconductor & Display Technology(KSDT), (2016)
국내 36 이상경, 조천흠, 유태진, 이호인, A.N.R.Reza, 이병훈, "그래핀 RF 소자의 drain-gate coupling에 의한 다중 신호 공진 현상", 23rd Korean Conference on Semiconductors(KCS), 2016
국내 35 김소영, 김윤지, 이상경, 황현준, 허선우, 장경은, 조천흠, 이병훈, "질소도핑된 ZnO를 이용한 그래핀 FET의 On-Off 특성 향상", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.
국제 34 H.J. Hwang, W.B. You, K.E. Chang, C.H Shim, C. Cho, J.H. Yang, Y.J. Kim, S.K. Lim, W.Park, and B.H. Lee, "Graphene barristor with nitrogen doped ZnO for high on/off ratio and wide barrier height modulation", SISC, (2015)
국제 33 U. Jung, S.M. Kim, D. Lim, K.E. Chang, Y.J. Kim, S.C. Kang, S.K. Lim, C. Choi and B.H. Lee, “Mechanism of subthreshold swing degradation in p-type tunnel FETs", SISC, (2015)
국제 32 Y.J. Kim, S.Y. Kim, U. Jung, S.K. Lee, K.E. Chang, C. Cho and B.H. Lee, "Fermi level of graphene under a metal contact modulated by high pressure hydrogen anneal", SISC, (2015)
국제 31 S.K. Lee, U. Jung, C. Cho, T.J. Yoo, A.N.R. Reza, H.I. Lee, and B.H. Lee, "The role of interface charge traps in the RF operation of graphene devices", SISC, (2015)
국제 30
H.J. Hwang, K.E. Chang, W.B. You, C.H Shim, S.K. Lee, J.H. Yang, C. Cho, S.K. Lim, W. Park, J. Kim, B.H. Lee, "Barrier height modulation at Graphene-ZnO contact using nitrogen doping", Nano Korea, (2015)
국내 29 황현준, 유원범, 장경은, 심창후, 이상경, 양진호, 조천흠, 김윤지, 이병훈, "Nitrogen doping에 따른 Graphene/ZnO:N 접합의 전기적 특성 변화 분석", Materials Research Society of Korea(MRS-K), 2015, Best presentation award.
국내 28 박우진, 김용훈, 이상경, 정욱진, 양진호, 조천흠, 김윤지, 임성관, 이병훈, “MoS2 전계효과 트랜지스터의 컨택 저항 개선 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015
국제 27 W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, I.S. Hwang, H.B.R.Lee, and B.H.Lee, “Contact Resistance Reduction using Fermi Level De-pinning Layer for MoS2 FETs”, Tech. Dig of IEDM, (2014).
국제 26 W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, and B.H.Lee, “Contact Resistance Reduction for MoS2 FETs with Insulating Layers”, 44th IEEE Semiconductor Interface Specilaists Conference (SISC), (2014).
국제 25 C.Cho, S.K.Lee, S.Lee, Y.G.Lee, W.Park, J.Noh, H.J.Hwang, B.H.Lee, “Contact Resistance Modulation using Area to Peripheral Ratio of Graphene Contact", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014).
국제 24 C.Cho, C.G.Kang, S.K.Lim, M.H.Ham, B.H.Lee, “Direct growth of graphitic layer on Cu wire using KrF laser", Nano Korea, (2014).
국제 23 W.J. Park, Y.G. Lee, J.J. Kim, S.K. Lee, C.G. Kang, C. Cho, S.K. Lim, U. Jung, W.K. Hong, and B.H.Lee, “Reliability Characteristics of MoS2 FETs”, Int. Conf. on Solid State Device and Materials(SSDM), (2013)
국제 22 H.J. Hwang, J.H. Yang, S.C. Kang, C. Cho, C.G.Kang, Y.G. Lee, B.H. Lee, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack," INFOS, (2013).
국내 21 강창구, 임성관, 이상철, 이상경, 조천흠, 이영곤, 황현준, 김용훈, 최호준, 최선희, 이병훈, “반도체 배선으로서의 그래핀의 응용”, 20th Korean Conference on Semiconductors(KCS), (2013). Best paper award
국내 20 조천흠, 임성관, 황현준, 강창구, 이영곤, 신희성, 최호준, 황현상, 이병훈, “Properties of Graphene Fabricated using Pulsed Laser Graphitization of Si-face 4H-SiC Substrate”, 20th Korean Conference on Semiconductors(KCS), (2013).
국내 19 박우진, 양진호, 강창구, 조천흠, 이상철, 임성관, 김용훈, 이상경, 강수철, 홍웅기, 이병훈 "Study of touch sensing characteristics in PVDF-TrFE/MoS2 field-effect transistors", presented at 20th Korean Conference on Semiconductors(KCS), 2013.
국제 18 H.S. Shin, H.J. Hwang, J. Noh, Y.G. Lee, C. Cho, S.K. Lim and B.H. Lee “Fabrication of suspended graphene cantilever using top down process,” Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2012).
국제 17 Y.G. Lee, C.G. Kang, C. Cho, Y.H. Kim, H.J. Hwang, J.J.Kim, U.J. Jung, E.J.Park, M.W.Kim, B.H. Lee, "Mechanisms of Ambient Dependent Mobility Degradation in the Graphene MOSFETs on SiO2 Substrate," Silicon Nanoworkshop (SNW), (2012).
국내 16 E.J.Park, C.G.Kang, S.K.Lee, C.Cho, Y.G.Lee, H.J.Chung, S.Seo, B.H.Lee, “Effects of SC1 cleaning on the performance of graphene FET", 19th Korea Semiconductor Conference (KSC), (2012).
국제 15 B.H.Lee, H.J.Hwang, E.J. Paek, Y.G.Lee, C.G.Kang, S.K.Lee, C.Cho, “Applications of Metal/PVDF-trFE/Graphene Devices for Future Electronics," Workshop on Frontiers in Electronics, (2011), Best Poster Paper Award.
국제 14 Y.G. Lee, C.G. Kang, Y.H. Kim, C.H. Cho, U.J. Jung, S.K. Lee, B.H. Lee, "Study on the Origin of Hysteretic Characteristics of Graphene Field Effect Transistor," IEEE SISC, (2011).
국제 13 C.G. Kang, Y.G. Lee, S.K. Lee, E. Park, C.H. Cho, S.K. Lim, H.J. Hwang, B.H. Lee, "Enhancement of electron conduction and reduction of hysteresis for graphene FET by low temperature ALD Al2O3 Passivation", IEEE SISC, (2011).
국제 12 C. Cho, S.K. Lim, C.G. Kang, Y.G. Lee, H.J. Hwang, E.J. Park, and B.H. Lee, “Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.38, (2011).
국제 11 E.J Paek, H.J. Hwang, S.K. Lee, C.G. Kang, C.H. Cho, Y.G. Lee, S.K. Lim, and B.H. Lee, “Touch Pressure Sensor using Metal/PVDF-TrFE/Graphene Device,” Ext. Abs. of Solid State Devices and Materials (SSDM), p.1331, (2011).
국제 10 C.Cho, C.G.Kang, Y.G.Lee, H.J.Hwang, S.K.Lee, S.K. Lim, S.Y.Lee, H.Hwang, B.H.Lee, " Electrical Characteristics of Top Gate Graphene FETs on Laser Graphitized 4H-SiC," Silicon Nanoworkshop (SNW), (2011).
국제 9 C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, J.S.Heo, H.J.Chung, H.J.Yang, S.E.Seo, B.H.Lee, "Variability and Feasibility of CVD Graphene Interconnect", Proc. of VLSI-TSA, (2011).
국내 8 C.G. Kang, Y.G. Lee, S.K. Lee, H.J. Hwang, C.H. Cho, S.K. Lim, S.Y. Lee, E.J. Park, J. Heo, H.J. Chung, H. Yang, S. Seo and B.H. Lee, "Passivation effects of low temperature ALD Al2O3 gate dielectric for graphene FET", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 7 H.J.Hwang, C.H.Cho, C.G.Kang, S.K.Lim, S.Y.Lee, E.J.Paek, H.Hwang, B.H.Lee, "Top Gate Graphene Field Effect Transistor on MLG/4H-SiC Substrates," 18th Korean Conference on Semiconductors (KCS), (2011).
국제 6 Y.G. Lee, C.G. Kang, S.K. Lee, K.J. Choi, C.H. Cho, H.J. Hwang, S.Y. Lee, S.K. Lim, U.J. Jung, and B.H. Lee, "Characteristics of Very Low Temperature ALD Al2O3 Gate Dielectric for Top Gate Graphene MOSFET Applications", Ext. Abs. of Int. Workshop on Dielectric Thin Film (IWDTF), p.21, (2011).
국제 5 S.K. Lim, C.H.Cho, S.Y. Lee, H.J.Hwang, C.G. Kang, Y.G. Lee, J. Ahn, and B.H. Lee,"Study of the graphene transfer from graphitized SiC substrate", Ext. Abs. of SSDM, pp.591, (2010).
국제 4 B.H. Lee, C.H. Cho, S.K. Lim, S.Y. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, C.G. Kang, "Feasibility of Wrinkle Free Graphene Process", Abs. of American Vac. Soc. Symposium, Albuquerque, p.61, (2010), Invited
국내 3 C.H.Cho, S.H.,Kim, S.K.Lim, S.Y.Lee, H.J.Hwang, H.Hwang, B.H.Lee, "Carbon condensation and Germanium sublimation in GeC films by pulse laser annealing", 17th Korean Conference on Semiconductors (KCS), (2010).
국내 2 H.J.Hwang, S.K.Lim, S.Y.Lee, C.H.Cho, B.H.Lee, "Simplified analytic model for the scaling limit of nano electro mechanical switch devices", 17th Korean Conference on Semiconductors (KCS), (2010).
국제 1 B.H.Lee, C.H.Cho, H.J.Hwang, S.K. Lim, S.Y. Lee, H.Hwang, "NEMS-CMOS hybrid technology and its applications", NANO Korea, (2009), Invited.
Patents/Book
국내 2 Byoung Hun Lee, Eun Jeong Paek, Hyeon Jun Hwang, Chun Hum Cho, "압전효과를 이용한 그래핀 터치센서," 출원번호 10-2011-0030182, 2011.
국내 1 Byoung Hun Lee, Hyunsang Hwang, and Chunhum Cho, “그래핀 제조방법,” 출원번호. : 10-2009-0099611, 2011.
- Other Expertise
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Experience
2010~ : Ph. D program, Exporatory Hybrid Electonic Device Lab. (GIST), Large area grapheneprocess and device integration
2008~2010 : Master program, Semiconductor Integrated Devices and Process Lab. (GIST), Formation of epitaxial graphene on 4H-SiC by laser annealing and study of its properties
2005~2006 : Undergraduate researcher, Information Material and Device Lab. (Kyungpook Nat. Univ.), Fabrication of Transparent Thin Film Transistor based on InZnO
Technical Skills
Raman spectroscopy of graphene
Electrical characterization of graphene device
Semiconductor integration process
Course completion of Education of Semiconductor Process, National Education Center for Semiconductor Technology in Kyungpook Nat. Univ., Jan. 2007Course completion of Introcuction to Display, Display Technology Education Center in Kyungpooknat. Univ, Sep. 2005Course completion of Experimental Environment Safety Education, Environmental Science and Technology Institute in Kyungpook nat. Univ.
- Course Work
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Master
Electronic Properties of Materials
Semiconductor Processing
Advanced Thermodynamics
Solid State Physics
Organic Materials for Electronics and Photonics II
Semiconductor Materials and Devices
Nanoelectronics
Advanced Electrical Characterization Methods for Nano Scale Devices
Thin Film Technology
Ph. D
Organic Materials for Electronics and Photonics I
Nanomaterials
Post CMOS Hybrid Device Technology
Electrical characterization for advanced nano-scale devices
Solid State Electrochemistry