Kang, Soo Cheol (S.C.Kang)

Ph.D 2013-2019

Current affiliation
2021 -, Samsung Electronics

since 2013 :   Ph.D., Dept. of MSE, GIST

2011 – 2013 :   M.S., Dept. of MSE, GIST

2005 – 2011 :   B.S., Dept. of Physics, Chonbuk National University

Research Interest

Reliability of high-k MOSFET

Electric characterization method for semiconductor devices

Enhancement Ferroelectric properties of PVDF-TrFE



18 S.M.Kim, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.W.Heo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive Analysis of physical defects in a graphene channel using Amplitude Modulated Discharge Current," Submitted to Carbon (2021).
17 T.J.Yoo, H.J.Hwang, S.C.Kang, S.W.Heo, H.I.Lee, Y.G.Lee, H.K.Park, S.K.Lee and B.H. Lee*, "Direct defect level analysis for Metal-Insulator-Metal Capacitor using Internal Photoemission Spectroscopy," In revision, J. of EDS (2021).
16 S.C. Kang, H.W. Jung, S.J. Chang, S.M. Kim, S.K. Lee, B.H.Lee, H.C. Kim, Y.S. Noh, S.H. Lee, S.I. Kim, H.K. Ahn, J.W. Lim, "Quantitative defect density extraction method for Metal–Insulator–Metal Capacitor," Nanomaterials 10(11), p.2116 (2020).
15 S.C.Kang, S.K.Lee, S.M.Kim, H.J.Hwang, and B.H. Lee*, "Quantitative defect density extraction method for Metal–Insulator–Metal Capacitor," Semiconductor Science and Technology 35(11), p.115025 (2020).
14 S.C.Kang, S.Y.Kim, S.K.Lee, K.Y.Kim, B. Allouche, H.J.Hwang, and B.H. Lee*, "Channel defect profiling and passivation for ZnO thin film transistors," Nanomaterials 10(6), pp.1-8 (2020).
13 S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee*, "Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics,"IEEE Electron Device Letters 40(11), 171 6(2019).
12 S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,”  Solid State Electronics 158, pp.46-50(2019).
11 H.J. Hwang, S.Y. Kim, S.C. Kang, B. Allouche, B.H. Lee *, “ Piezoelectrically modulated touch pressure sensor using a graphene barristor,” Jpn. J. Appl. Phys.58(SB), SBBH03(2019).
10 S.K .Lim, S.C. Kang, T.J. Yoo, S.K. Lee, B.H. Lee*, “ Operation mechanism of MoS2/BP hetero junction FET,” Nanomaterials 8(10), p.797(2018).
9 S.C. Kang, D.H. Lim, S.K. Lim, J.W. Noh, S.M. Kim, S.K. Lee, C.H. Choi, and B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET," In press,  Jpn. J. Appl. Phys., 57(4), 05FB02 (2018).
8 Y.H.Kim, A.R.Kim, G. Zhao, S.Y.Choi, S.C.Kang, S.K.Lim, K.E.Lee, J.C.Park, B.H.Lee, M.G.Hahm, D.H.Kim, J.J.Yun, K.H.Lee, B.J.Cho , "Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors," ACS Applied Materials and Interfaces 9(42), pp. 37146-37153(2017).
7 J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance," IEEE Electron Device Letters  38, 4, p.521-524 (2017).
6 Y.H.Kim, S.C.Kang,  S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
5 J.H.Yang,H.J. Hwang, S.C. Kang, and B.H. Lee*, "Sensitivity improvement of graphene/Al2O3/PVDF-TrFE stacked touch device through Al seed assisted dielectric scaling,"  Microelectronics Engineering, 147, p.79-84 (2015).
4 Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, " Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization", Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)
3 H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack,” Microelectronics Engineering, 109, p.87-89, Sep. (2013).
2 W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack,” Nanotechnology, 24, 475501 (2013).
1 H.J. Hwang, J.H.Yang, Y.G.Lee, C.Cho, C.G.Kang, S.C.Kang, W.Park, and B.H.Lee*, “Ferroelectric Polymer Gated Graphene Memory with Very High Speed Conductivity Modulation,” Nanotechnology, 24, on-line published (2013). Also selected as a paper of particular interest.


국제  18   S.M. Kim, T.M.H. Nyugen, J.W. Oh, Y.S. Lee, S.C. Kang, H.I. Lee, C.H. Kim, S. Some, H.J. Hwang and B.H. Lee*, "Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration", IEEE International Reliability Physics Symposium (IRPS), (2021).

국제 17 S.C. Kang, S. K. Lee, S. Heo, S. M. Kim, S. K. Lim and B. H. Lee, “Reliability characteristics of MIM capacitor studied using delta C-F characteristics,” to be presented at Int. Rel. Phys. Symp., (2018).

국내 16 김승모, 강수철, 임성관, 허선우, 이호인, 이용수, 이병훈, "동작 메커니즘에 기반한 Tunnel FET의 신뢰성 측정법에 관한 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)

국내 15 김기영, 허선우, 김윤지, 이상경, 강수철, 이병훈, "EOT Scaling of Atomic Layer Deposited HfO2 on Buried-Gate Graphene FET", The 24th Korean Conference on Semiconductors (KCS), 2017

국내 14 강수철, 노진우, 임동환, 김승모, 임성관, 최창환, 이병훈, "H2 Annealing에 의한 Tunnel FET Inverter의 전기적 특성 변화", The 24th Korean Conference on Semiconductors (KCS), 2017

국내 13 김승모, 정욱진, 임성관, 강수철, 이병훈, "Tunnel FET의 고유한 열화메카니즘에 관한 연구", 23rd Korean Conference on Semiconductors(KCS), 2016

국내 12 강수철, 김용훈, 정욱진, 박우진, 김승모, 이병훈, "FinFET의 Bipolar AC Stress에 의한 Reliability 특성", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.

국제 11 U. Jung, S.M. Kim, D. Lim, K.E. Chang, Y.J. Kim, S.C. Kang, S.K. Lim, C. Choi and B.H. Lee, “Mechanism of subthreshold swing degradation in p-type tunnel FETs", SISC, (2015)

국내 10 강수철, 이영곤, 김용훈, 정욱진, 박우진, 김윤지, 이병훈, “FinFET의 AC Stress Reliability 특성”, 22nd Korean Conference on Semiconductors(KCS), 2015

국내 9 김용훈, 정욱진, 강수철, 이영곤, 이병훈, “TDR 분석법을 이용한 미세전계효과소자의 Effective Moliblity 추출 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015

국제 8 J.H.Yang, H.J.Hwang, S.C.Kang, W.Park, B.H.Lee, “Stable conductivity modulation of graphene using graphene/Al2O3/metal/piezoelectric polymer/metal stack", Nano Korea, (2014).

국제 7 J.H. Yang, H.J. Hwang, W.J. Park, S.C. Kang, B.H. Lee, “The modulation of graphene conductivity using piezoelectric polymer and its application to touch devices”, 2013 Joint Symposium on MSE for 21C, 2013

국제 6 B.H. Lee, H.J.Hwang, J.H.Yang, S.C.Kang, W.J.Park, “Electronic Applications of Graphene/PVDF-TrFE stack”, UKC, (2013), invited.

국제 5 H.J. Hwang, J.H. Yang, S.C. Kang, C. Cho, C.G.Kang, Y.G. Lee, B.H. Lee, “Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack," INFOS, (2013).

국내 4 강수철, 양진호, 황현준, 이병훈, “Enhancement Ferroelectric properties of PVDF-TrFE on graphene electrode”, 20th Korean Conference on Semiconductors(KCS), 2(2013).

국내 3 박우진, 양진호, 강창구, 조천흠, 이상철, 임성관, 김용훈, 이상경, 강수철, 홍웅기, 이병훈 "Study of touch sensing characteristics in PVDF-TrFE/MoS2 field-effect transistors", presented at 20th Korean Conference on Semiconductors(KCS), 2013.

국제 2 S.C.Kang, J.H.Yang, E.J.Paek, H.J.Hwang, B.H.Lee, “Optimization of Ferroelectric P(VDF-TrFE) film to Maximize the remanent polarization”, Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2012).

국제 1 J.H. Yang, E.J. Paek, H.J. Hwang, S.C. Kang, B.H. Lee "Piezoelectric characteristics of Au/PVDF-TrFE/Au device", NanoKorea, (2012).

Other Expertise


2006.04~2008.07 Served Military service at R.O.K Air Force

Technical Skills

Gate dielectric reliability

Electric characterization of semiconductor devices

Ferroelectric polymer material device fabrication process

Course Work


Introduction to mechanics of materials.

Semiconductor Memory Device.

Flexible Electronics : Materials and Applications.

Compound Semiconductor Device Processing

Solid State Electrochemistry

Device physics for nanoscale solid state devices

Introduction to patents

Advanced Electrical Characterization Methods for Nano Scale Device

Ph. D

Venture Creation

Theory of Semiconductor Devices.


Solid state physics