Lee, Yongsu (Y. LEE)

Ph.D 2023

82-54-279-5422 kingyb45@postech.ac.kr

Current affiliation

Korea Atomic Energy Research Institute

Education

2021 – present : Ph.D Course, Electrical Engineering, POSTECH

2016 – 2021 : Integrated M.S & Ph.D Course, Dept. of MSE, Gwangju Institute of Science and Technology (GIST)

2011 – 2016 : B.S., Physics concentration, Gwangju Institute of Science and Technology (GIST)

Research Interest

fabrication and characterization of graphene barristor device (ZnO, In2O3, DNTT)

fabrication and characterization graphene based reconfigurable device

reliability of graphene/Cu interconnect for electro-migration

large scale monolayer graphene growth by CVD

P-type ternary logic device development

Publication

Journals

S.M.Kim, H.I.Lee, Y.S.Lee, S.Y.Kim, T.J. Yoo, S.W.Heo, S.C.Kang, H.J.Hwang, B.H.Lee*, "Non-destructive Analysis of physical defects in a graphene channel using Amplitude Modulated Discharge Current," Submitted to Nature Electronics (2021).

S.Y.Kim, K.Y.Kim, A.R Kim, H.I.Lee, Y.S. Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H. Lee*, "Operation principles of ZnO/Al2O3-AlDMP/ZnO channel ternary thin film transistor," Submitted to Science Advances (2021).

M.W.Son, J.W. Jang, Y.S.Lee, W.K.Lee, J.Y.Hwang, I.S. Kim, B.H.Lee, M.H. Ham, S.S.Jee, "Copper-Graphene Heterostructure for BEOL-Compatible High-Performance Interconnects," In press, NPJ 2D Materials and Applications (2021)

H.I.Lee, J.S.Park,Y.J.Kim, S.W.Heo, J.W.Hwang, S.M.Kim, K.Kim, Y.S.Lee, J.W.Jung, H.B.Kim, K.J.Cho, M.M.Sung, B.H.Lee*, "Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on-off ratio field-effect switching applications,”  Nanoscale 12(32), p.16755(2020).

S.Y.Kim, J.A. Ryou, M.J. Kim, K.Y.Kim, Y.S.Lee, S.M.Kim. H.J.Hwang, Y.H.Kim, B.H.Lee*, "Performance degradation in graphene-ZnO barristors due to graphene edge contact," ACS Applied Materials and Interfaces 12(25), pp.28768-28774 (2020).

S.W.Heo, M.G. Gwon, C.H. Kim, S.M. Kim, Y.S. Lee, K.E. Chang and B.H. Lee*, "Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifie,” AIP Advances 9(9), 095009, (2019).

H.J. Hwang, Y.S. Lee, C. Cho, B.H. Lee*, “ Facile process to remove PMMA residue after graphene transfer,” AIP Advances 8(10), p.105326(2018).

H.J. Hwang, K.E. Chang, W.B.Yoo, C.H.Shim, S.K.Lee, J.H. Yang, S.Y. Kim, Y.S. Lee, C. Cho, B.H. Lee*, “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts," Nanoscale  9, p.2442 (2017).

Conferences

Jae Hyeon Jun, Yongsu Lee, Minjae Kim, Hae-Won Lee, Hyeon Jun Hwang, and Byoung Hun Lee, "Full-adder design based on reconfigurable logic device using deltaconduction switch", NANO KOREA, 2023.

Hae-Won Lee, Seung-Mo Kim, Yongsu Lee, Minjae Kim, Jae Hyeon Jun, Hyeon Jun Hwang, Byoung Hun Lee, "Electrical Characteristics of Zero Differential Transconductance Thin Film Transistor", NANO KOREA, 2023.

Kiyung Kim, Useok Choi, Minjae Kim, Hae-Won Lee, Yongsu Lee, Hyeon Jun Hwang and Byoung Hun Lee, "Study on Integration Process for Complementary Logic Circuit Using Ultrathin ZnO and Te Thin-film Transistor", NANO KOREA, 2023.

Hae-Won Lee, So-Young Kim, Ho-In Lee, Yongsu Lee, Seung-Mo Kim, Hyeon Jun Hwang and Byoung Hun Lee, "Electrical characteristics of sub-5 nm SnO2 deposited using Atomic Layer Infiltration (ALI) process", IEEE EDTM 2023, 2023.

Minjae Kim, Yongsu Lee, Heejin Kwon, Jangseop Lee, Seung Mo Kim, Hae-Won Lee, Jae Hyeon Jun, Hyeon Jun Hwang, Hyunsang Hwang and Byoung Hun Lee, "Channel thickness dependent optical bandgap observed from the p-type tellurium thin film transistor", IEEE EDTM 2023, 2023.

이용수, 권희진, 김민재, 김승모, 전재현, 이해원, 황현준, 이병훈, "패터닝 방법을 이용한 유∙무기 TFT 기반의 논리 응용 회로 시연", The 30th Korean Conference of Semiconductors (KCS), 2023.

김승모, 김기성, 추형석, 김민재, 이해원, 황현준, 이병훈, "Green laser를 이용한 ALD-HZO 강유전체 특성 구현 연구", The 30th Korean Conference of Semiconductors (KCS), 2023.

이해원, 김승모, 김소영, 김민재, 이호인, 이용수, 전재현, 황현준, 이병훈, "n 형 영미분전도 소자의 노이즈 특성에 관한 연구", The 30th Korean Conference of Semiconductors (KCS), 2023.

김민재, 이용수, 권희진, 김승모, 이해원, 전재현, 황현준, 백승훈, 이병훈, "Encapsulation을 이용한 P형 Tellurium TFT의 히스테리시스 특성 개선", The 30th Korean Conference of Semiconductors (KCS), 2023.

전재현, 이용수, 김기영, 이호인, 권희진, 김민재, 이해원, 황현준, 이병훈, "고성능 델타전도 스위칭 소자 기반의 재구성 가능한 논리소자", The 30th Korean Conference of Semiconductors (KCS), 2023. 

Jae Hyeon Jun, Yongsu Lee, Kiyung Kim, Ho-In Lee, Heejin Kwon, Minjae Kim, Hae-Won Lee, Hyeon Jun Hwang, and Byoung Hun Lee*, "High performance delta-conduction switch-based reconfigurable logic device", Nano Convergence Conference (NCC), 2023.

Minjae Kim, Yongsu Lee, Heejin Kwon, Seung Mo Kim, Hae-Won Lee, Jae Hyeon Jun, Hyeon Jun Hwang and Byoung Hun Lee*, "Improvement of hysteresis characteristics of P-type tellurium TFT using encapsulation layer", Nano Convergence Conference (NCC), 2023, best poster award.

Hae-Won Lee, Seung-Mo Kim, So-Young Kim, Minjae Kim, Ho-In Lee, Yongsu Lee, Jae Hyeon Jun, Hyeon Jun Hwang, Byoung Hun Lee*, "Study on the noise characteristic in n-type zero-gm conduction device", Nano Convergence Conference (NCC), 2023.

Kiyung Kim, Sunmean Kim, Youngsu Lee, Hyeon Jun Hwang, and Byoung Hun Lee*, "Optimized Condition of Ternary Stack Channel Transistor for Low Device Count Ternary Full-adder", Nano Convergence Conference (NCC), 2023.

K.Y.Kim, Y.S.Lee, H.W.Lee, H.J.Kwon and B.H.Lee*, “Study on the VDD scalability of complementary ternary logic circuit using stack channel ternary thin film transistor”, NANO KOREA, (2022).

H.W.Lee, S.Y.Kim, H.I.Lee, Y.S.Lee, S.M.Kim, H.J.Hwang and B.H.Lee*, “Study on the stability of SnO2 stack channel ternary device”, NANO KOREA, (2022).

H.J.Kwon, Y.S.Lee, H.I.Lee, K.Y.Kim, H.W.Lee, M.J.Kim, J.H.Jun, H.J.Hwang and B.H.Lee*, “Optimization of DNTT-based thin film transistor and its ternary application”, NANO KOREA, (2022).

이용수, 김승모, 김기영, 김소영, 이호인, 권희진, 이해원, 황현준, 이병훈, "전류 증폭/억제를 이용한 이중 채널 P형 삼진 소자", The 29th Korean Conference of Semiconductors (KCS), (2022)

Ho-In Lee, So-Young Kim, Seung-Mo Kim, Yongsu Lee, Hae-Won Lee, Heejin Kwon, Junho Lee, Hyeon Jun Hwang, and Byoung Hun Lee, "Performance merits of scaled ZnO Stacked Nanosheet Channel Ternary Field Effect Transistor", The 29th Korean Conference of Semiconductors (KCS), (2022)

김승모, 이준호, 이용수, 이호인, 김시현, 권희진, 이해원, 황현준, Surajit Some, 이병훈, "저온 성장된 ZrO2 MIM 커패시터의 전기적 특성 향상 방법에 관한 연구", The 29th Korean Conference of Semiconductors (KCS), (2022)

이준호, 김승모, Muhammad Taqi, 이호인, 이용수, 권민규, 이해원, 황현준, 유원종, 이병훈, "2D 물질 기반 band modulation FET의 전기적 특성에 관한 연구", The 29th Korean Conference of Semiconductors (KCS), (2022)

이해원, 김소영, 이호인, 이용수, 김승모, 황현준, 이병훈, "SnO2 삼진 로직 소자 제작 및 시간에 따른 소자 안정성 연구", The 29th Korean Conference of Semiconductors (KCS), (2022)

김기영, 김소영, 이용수, 황현준, 이병훈, "Stack channel ternary TFT의 모델 개발과 응용 시뮬레이션", The 29th Korean Conference of Semiconductors (KCS), (2022)

권희진, 이용수, 김승모, 이준호, 김시현, 권민규, 황현준, 이병훈, "Polymer electret을 이용한 DNTT 기반의 비휘발성 OFET 메모리", The 29th Korean Conference of Semiconductors (KCS), (2022)

S.M. Kim, T.M.H. Nyugen, J.W. Oh, Y.S. Lee, S.C. Kang, H.I. Lee, C.H. Kim, S. Some, H.J. Hwang and B.H. Lee*, "Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration", IEEE International Reliability Physics Symposium (IRPS), (2021).

Y.S.Lee, S.M.Kim, H.I.Lee, S.Y.Kim, C.H.Kim, H.J.Hwang, and B.H.Lee*, "Low Temperature and Parameter Controllable ZnO-DNTT Antiambipolar Transistor and Its Ternary Application" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).

S.Y.Kim, S.R.Lee, S.M.Kim, Y.S.Lee, H.I.Lee, H.W.Lee, K.Kim, H.J.Hwang, and B.H.Lee*, "A study on the electrical characteristic of ultra-thin oxide semiconductor field-effect transistor" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).

S.M.Kim, H.I.Lee, S.Y.Kim, Y.S.Lee, H.J.Hwang, and B.H.Lee*, "A Study on the Degradation Mechanism of Vertical Stacked ZnO TFT" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).

C.H.Kim, T.J.Yoo, M.G.Kwon, Y.S.Lee, H.J.Hwang, and B.H.Lee*, "Improving the Responsivity of Graphene/Ge Schottky Junction Infrared Photodetector via Impact Ionization" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).

H.I.Lee, Y.S.Lee, S.M.Kim, S.Y.Kim, H.J.Hwang, and B.H.Lee*, "Demonstration of frequency doubler using ZnO-DNTT antiambipolar transistor with high peak-to-valley ratio (>106)," Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).

Kiyung Kim, Sunmean Kim, Yongsu Lee, Daeyeon Kim, So-Young Kim, Seokhyeong Kang, Byoung Hun Lee*, "Extreme Low Power Technology using Ternary Arithmetic Logic Circuits via Drastic Interconnect Length Reduction", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2020)

H.W.Lee, S.Y.Kim, S.M.Kim, H.I.Lee, Y.S.Lee, H.J.Hwang and B.H.Lee*, "A study on the atomic layer deposited tin oxide channel for thin film transistor", NANO KOREA, (2020).

Y.S.Lee, H.J.Kwon, H.I.Lee, S.Y.Kim, S.M.Kim, K.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of p-type ternary logic device and its circuit application", NANO KOREA, (2020).

C.H.Kim, T.J.Yoo, M.G.Kwon, Y.S.Lee, H.J.Hwang and B.H.Lee*, "Graphene/Ge Schottky junction infrared photodetector with embedded MOS system", NANO KOREA, (2020) Best poster award.

S.Y.Kim, K.Kim, A.R.Kim, H.I.Lee, Y.S.Lee, S.M.Kim, H.W.Lee, H.J.Hwang and B.H.Lee*, "Electrical performance of stack channel ternary logic device depending on the carrier concentration of ZnO", NANO KOREA, (2020).

H.J.Kwon, Y.S.Lee, H.J.Hwang and B.H.Lee*, "Effect of introducing polymer buffer layers on the p-type DNTT transistors", NANO KOREA, (2020).

이용수, 김채은, 김소영, 김시현, 이호인, 김승모, 김기영, 황현준, 이병훈, "삼진상보보완회로를 위한 그래핀 기반의 P-type 삼진 로직 소자", The 27th Korean Conference of Semiconductors (KCS), (2020)

김소영, 김소륜, 이호인, 이용수, 김기영, 이해원, 김채은, 황현준, 이병훈, "ZnO 기반 삼진 로직 소자의 중간 전류 레벨 조절 연구", The 27th Korean Conference of Semiconductors (KCS), (2020)

김승모, 김소영, 이호인, 이용수, 유태진, 김시현, 황현준, 이병훈, "화학적 토핑 방법을 이용한 그래핀 일함수 조율의 전기적 특성 분석", The 27th Korean Conference of Semiconductors (KCS), (2020)

이호인, 김소영, 김승모, 이용수, 황현준, 이병훈, "Implementation of pseudo n-type ternary analog to digital converter using ZnO nanosheet stack channel field-effect-transistor", The 27th Korean Conference of Semiconductors (KCS), (2020)

김시현, 유태진, 권민규, 이용수, 김승모, 황현준, 이병훈, "MOS 커패시터가 내장된 그래핀/Ge 쇼트키 접합 광소자", The 27th Korean Conference of Semiconductors (KCS), (2020)

Seung-Mo Kim, Yongsu Lee, Sunwoo Heo, Ho-In Lee, Min Gyu Kwon, Hyeon Jun Hwang, and Byoung Hun Lee, "Pure physical defects formation using AFM lithography on graphene channel", NANO KOREA,  (2019)

Cihyun Kim, Tae Jin Yoo, Min Gyu Kwon, Kyoung Eun Chang, Yongsu Lee, Hyeon Jun Hwang, and Byoung Hun Lee, "Performance improvement of graphene/Ge Schottky junction infrared photodetector with interfacial thin oxide layer", Nano Korea, (2019)

Yongsu Lee, Chaeeun Kim, So-Young Kim, Kiyung Kim, Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Cihyun Kim, Hyeon Jun Hwang, and Byoung Hun Lee, "Structural improvement of DNTT graphene barristor by vertical drain electrode", Nano Korea, (2019)

Ho-In Lee, Sunwoo Heo, Seung-Mo Kim, Yongsu Lee,  Nguyen van Long, Hyeon Jun Hwang, Myung Mo Sung and Byoung Hun Lee, "Implementation of pseudo-n type ternary logic circuits using double stacked ZnO composite nanolayer Field-Effect-Transistors ", Nano Korea, (2019)

Chaeeun Kim, So-Young Kim, Yongsu Lee, Kiyung Kim, Byoung Hun Lee, "Contact Doping Layer for Graphene/DNTT Barristor", 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), (2019)

So-Young Kim, Sunwoo Heo, Kiyung Kim, Myungwoo Son, Seung-Mo Kim, Ho-In Lee, Yongsu Lee, Hyeon Jun Hwang, Moon-Ho Ham, Byoung Hun Lee, "Demonstration of ternary devices and circuits using dual channel graphene barristors", IEEE International Symposium on Multiple-Valued Logic (ISMVL), (2019)

김민재, 김소영, 이용수, 김승모, 이병훈, "Edge Contact Length가 그래핀-ZnO 배리스터에 미치는 전기적 특성 분석", The 26th Korean Conference on Semiconductors (KCS), (2019)

유태진, 이용수, 이상경, 황현준, 이병훈, "CVD 그래핀의 성장시간에 따른 전기적 특성 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)

김채은, 김승모, 허선우, 이용수, 김기영, 김민범, 이병훈, "유기물 반도체 두께에 따른 그래핀/DNTT 배리스터의 전기적 특성 변화 분석", The 26th Korean Conference of Semiconductors (KCS), (2019)

이용수, 김승모, 김소영, 이호인, 허선우, 이병훈, "그래핀 성장 조건에 따른 그래핀/구리 배선의 전자이주현상 변화", The 26th Korean Conference on Semiconductors (KCS), (2019)

Sunwoo Heo, Kiyung Kim, Ho-In Lee, Yongsu Lee, Seung-Mo Kim, Hyeon Jun Hwang, Byoung Hun Lee, "Graphene barristor based rectifier for dc level shift", Nano Convergence Conference (NCC), (2019) Best poster award.

So-Young Kim, Yongsu Lee, Jae Young Jeong, Seung-Mo Kim, Byoung Hun Lee, "Improvement in Electrical Characteristic of ZnO-graphene Barristor by Edge Contact Length Controlling", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018) Best poster award.

Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Yongsu Lee, So-Young Kim, Tae Jin Yoo, Byoung Hun Lee, "Schottky barrier height extraction of p-type semiconductor barristor", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)

Yongsu Lee, Sunwoo Heo, Hyeon Jun Hwang, Ho-In Lee, Seung-Mo Kim, Tae Jin Yoo, Byoung Hun Lee, "Nano‐Electro‐Mechanical(NEM) switch and Schmitt trigger application using multilayer graphene", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018)

Yongsu Lee, So-Young Kim, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Sunwoo Heo, Byoung Hun Lee, "Contact resistance properties for Nickel-n-type Silicon using graphene interlayer", Nano Korea, (2018).

Sunwoo Heo, Seung Mo Kim, Kyoung Eun Chang, Ho-In Lee, Kiyung Kim, Tae Jin Yoo, So-Young Kim, Yongsu Lee, Byoung Hun Lee, "Impact of charged impurities on graphene barristor", Nano Korea, (2018).

김승모, 강수철, 임성관, 허선우, 이호인, 이용수, 이병훈, "동작 메커니즘에 기반한 Tunnel FET의 신뢰성 측정법에 관한 연구", The 25th Korean Conference on Semiconductors (KCS), (2018)

이호인, 허선우, 김시현, 김윤지, 김승모, 김기영, 이용수, 이혜지, 이병훈, "ZnO:N-그래핀 접합 배리서터의 TiO2 층 페시베이션 효과", The 25th Korean Conference on Semiconductors (KCS), (2018)

Yongsu Lee, Hyeon Jun Hwang, Byoung Hun Lee, "Fabrication and characteristics of Three dimensional nano electro-mechanical switch (NEMS) using multi-layer graphene", Nano Korea, (2017), Best poster award.

허선우, 심창후, 김윤지, 김소영, 김기영, 이용수, 이상경, 이병훈, "그래핀 고정저항에 의한 그래핀/ZnO:N 배리스터의 동작특성 열화연구", The 24th Korean Conference on Semiconductors (KCS), 2017, Best poster award.

이용수, 황현준, 노진우, 김승모, 유지애, 이병훈, "다층그래핀을 이용한 재구성형 나노스케일 기계적 스위치", The 24th Korean Conference on Semiconductors (KCS), 2017

이용수, 황현준, 최준규, 박성준, 이병훈, “Fabrication and characterization of graphene/In2O3 barristor”, The 3nd Korean Graphene Symposium, (2016)

Patents/Book

이병훈, 이용수, 김소영 "스페이서 층이 있는 이종 접합 기반의 음미분저항 소자" 국내출원번호, 2020-0033836 (2020.03.19), 2020.

Other Expertise

Technical Skills

2D material based device fabrication

2D material Transfer process

Lithography process (Photomask Aligner and E-beam Lithography)

Electrical characterization of device and circuit application

Various material analysis tools (Micro-Raman, XPS, UPS, AFM, SEM etc)