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    • Kim, Seung-Mo (S.M.Kim)

    Ph.D 2024

    82-54-279-5422

    Current affiliation
    Samsung Electronics Semiconductor R&D Center
    Education

    2021 – 2024 : Ph.D Course, Electrical Engineering, POSTECH

    2017 – 2021 : Ph.D Course, Dept. of Material Science and Engineering, Gwangju Institute of Science and Technology (GIST)

    2015 – 2017 : M.S., Dept. of Material Science and Engineering, Gwangju Institute of Science and Technology (GIST)

    2011 – 2015 : B.S., Dept. Electrical Engineering and Computer Science Concentration, Gwangju Institute of Science and Technology (GIST)

    Publication

    Journals

    S.M. Kim, M. Kim, C.B. Lee, U. Choi, M.G. Kwon, K.S. Kim, J. Kim, H.J. Hwang, B.H. Lee*, "Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium-Zirconium Oxide" ACS Applied Materials and Interfaces, (2024).

    S.M. Kim, J.H. Jun, J. Lee, M. Taqi, H. Shin, S. Lee, H.W. Lee, W.J. Yoo, B.H. Lee, "Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback FET" On-line published, Nanomaterials, (2024).

    S.M. Kim, M.G. Kwon, M. Kim, C.B. Lee, K.S. Kim, H.J. Hwang, J. Kim, B.H. Lee*, "Extremely Thin Proximity Pt Silicide Formation Process using Continuous-Wave Laser Scanning Anneal" IEEE Electron Device Letters, 45(10), 1941, (2024).

    S.M. Kim, H.I. Lee, Y.S. Lee, S.Y. Kim, T.J. Yoo, S. Heo, S.C. Kang, H.J. Hwang, and B.H. Lee*, “Non-destructive analysis of physical defects in a graphene channel using amplitude modulated discharge current”, Carbon, 179, 627 (2021).

    D.H. Lee, S.M. Kim, J.C. Park, Y.S. Jung, S.Y. Lee, B.H. Lee, S. Lee*, "Enhancing Reliability in Oxide-Based Memristors Using Two-Dimensional Transition Metal Dichalcogenides" Applied Surface Science, 679, 161216, (2024).

    M.G. Kwon, C.H. Kim, S.M. Kim, T.J. Yoo, Y.S. Lee, H.J. Hwang, S.H. Lee, B.H. Lee*, "Demonstration of Low Power and High Speed Graphene/Silicon Heterojunction Near-infrared Photodetector" Nanoscale Advances, 6, 3391-3398, 2024 (included in 2024 Popular Advances collection)

    H.M. Ko, S.J. Yang. J. Jeung H. Park, W. Seo, S.M. Kim, B.H. Lee., K. Cho., Y. Chung*, "IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction" Advanced Optical Materials, 12, 2303152, (2024).

    H. Hwang, S.M. Kim, B.H. Lee*, "Pulsed I-V analysis of slow domain switching in ferroelectric Hf0.5Zr0.5O2 using graphene FETs" Advanced Electronic Materials, 2300511, (2023).

    Y.S. Lee, H.J. Kwon, S.M. Kim, H.I. Lee, K.Y. Kim, H.W. Lee, S.Y. Kim, H.J. Hwang, B.H. Lee*, "Demonstration of p-type stack-channel ternary transistor using scalable DNTT patterning" Nano Convergence, 10 (1), 12, (2023).

    Y.S. Lee, S.M. Kim, K.Y. Kim, S.Y. Kim, H.I. Lee, H.J. Kwon, H.W. Lee, C.E. Kim, S. Some, H.J. Hwang*, and B.H. Lee*, “Dual-channel p-type ternary graphene-DNTT barristor”, Scientific Reports, 22(1), 19423, (2022).

    Y.S. Lee, S. Kim, H.I. Lee, S.M. Kim, S.Y. Kim, K.Y. Kim, H.J. Kwon, H.W. Lee, S. Kang, H.J. Hwang*, and B.H. Lee*, “Demonstration of anti-ambipolar switch and its applications for extremely low power ternary logic circuits”, ACS Nano, 16(7), 10994-11003, (2022)

    S.C. Kang, H.W. Jung, S.J. Chang, I.G. Choi, S.K. Lee, S.M. Kim, B.H. Lee, H.K. Ahn, J.W. Lim, "Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs", Current Applied Physics, 39, 128-132, 2022.

    B. Lee, Y. Lee, S.M. Kim, K. Kim, M.G. Kim, “Rapid membrane-based photothermal PCR for disease detection”, Sensors and Actuators B: Chemical, 360, 131554, (2022).

    H.I. Lee, S.Y. Kim, S.M. Kim, Y.S. Lee, H.W. Lee, S.H. Yu, M.M. Sung, H.J. Hwang*, and B.H. Lee*, “Performance evaluation of scaled ZnO stacked nanosheet channel ternary field effect transistor”, IEEE Electron Device Letters, 43(2), 323 (2022).

    S.Y. Kim, K.Y. Kim, A.R. Kim, H.I. Lee, Y.S. Lee, S.M. Kim, H.W. Lee, H.J. Hwang, and B.H. Lee*, “Operation principles of ZnO/Al2O3-ALDMP/ZnO channel ternary thin film transistor”, Advanced Electronic Materials, 7(6), 2100247 (2021).

    H.J. Hwang, S.K. Lee, S.M. Kim, B.H. Lee*, " Direct measurement of transient charging and dipole alignment speed in Ferroelectric Hf0.5Zr0.5O2 gate dielectric using graphene FETs," Advanced Electronic Materials, 7, 2100145 (2021)

    S.C. Kang, H.W. Jung, S.J. Chang, S.M. Kim, S.K. Lee, B.H.Lee, H.C. Kim, Y.S. Noh, S.H. Lee, S.I. Kim, H.K. Ahn, J.W. Lim, "Charging Effect by Fluorine-Treatment and Recess Gate for Enhacnement-Mode on AlGaN/GaN High Electron Mobility Transistors," Nanomaterials, 10(11), p.2116 (2020).

    S.C. Kang, S.K. Lee, S.M. Kim, H.J. Hwang, and B.H. Lee*, "Quantitative defect density extraction method for Metal–Insulator–Metal Capacitor," Semiconductor Science and Technology 35(11), p.115025 (2020).

    H.I. Lee, J.S. Park, Y.J. Kim, S. Heo, J.W. Hwang, S.M. Kim, K. Kim, Y.S. Lee, J.W. Jung, H.B. Kim, K.J. Cho, M.M. Sung, and B.H. Lee*, “Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications”, Nanoscale, 12(32), 16755 (2020).

    S.Y. Kim, J.A. Ryou, M.J. Kim, K.Y. Kim, Y.S. Lee, S.M. Kim, H.J. Hwang, Y.H. Kim, B.H. Lee*, "Performance degradation in graphene-ZnO barristors due to graphene edge contact," ACS Applied Materials and Interfaces 12(25), pp.28768-28774 (2020).

    S. Heo, M.G. Kwon, H.I. Lee, C.H. Kim, S.M. Kim, K.E. Chang, Y.S. Lee and B.H. Lee*, “Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier”, AIP Advance, 9(9), 095009 (2019)

    S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,” Solid State Electronics 158, pp.46-50(2019).

    S.C. Kang, D. Lim, S.K. Lim, J. Noh, S.M. Kim, S.K. Lee, C. Choi, B.H. Lee*, “Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET” Japanese Journal of Applied Physics, 57, 04FB02, 2018

    S. Heo, S. Kim, K.Y. Kim, H.J. Lee, S.Y. Kim, Y.J. Kim, S.M. Kim, H.I. Lee, S.G. Lee, K.R. Kim, S. Kang*, and B.H. Lee*, “Ternary full adder using multi-threshold voltage graphene barristors”, IEEE Electron Device Letters, 39(12), 1948 (2018).

    S. Heo, H.I. Lee, H.J. Lee, S.M. Kim, K.Y. Kim, Y.J. Kim, S.Y. Kim, J.H. Kim, M.H. Yoon, and B.H. Lee*, “Very low-temperature integrated complementary graphene barristor based inverter for thin film transistor applications”, Annalen der Physik, 530(10), 1800224 (2018).

    J.S. Song, M.J. Seo, T.H. Lee, Y.R. Jo, J.M. Lee, T.M. Kim, S.-Y. Kim, S.M. Kim, S.Y. Jeong, H.J. An, S.K. Kim, B.H. Lee, D.H. Lee, H.W. Jang, B.J. Kim, S.H. Lee, “Tailoring crystallographic orientations to substantially enhance charge separation efficiency in anisotropic BiVO4 photoanodes,” ACS Catalysis, 8(7), p. 5952 (2018).

    Y.J. Kim, S.M. Kim, S. Heo, H.J. Lee, H.I. Lee, K.E. Chang, B.H. Lee*, “High-pressure and low-temperature oxidation Al2O3 for performance enhancement of graphene field-effect transistor”, Nanotechnology 29, 055202 (2018).

    J. Noh, S.M. Kim, S. Heo, S.C. Kang, Y.G. Lee, H.K. Park, S.K. Lee, B.H. Lee*, “Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance", IEEE Electron Device Letters 38, 4, p.521-524 (2017).

    Y.H. Kim, S.C. Kang, S.K. Lee, U.J. Jung, S.M. Kim, B.H. Lee*, “Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress", IEEE Electron Device Letters 37(4), pp.366 (2016).

    Conferences

    C.B. Lee, S.M. Kim, M. Kim and B.H. Lee*, “Characteristics of Anti-Ferroelectric ZrO2 Treated with Continues Wave-Laser Scanning Annealing (CW-LSA)”, Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2024).

    C.B. Lee, S.M. Kim, M. Kim and B.H. Lee*, "Characterization of ferroelectric annealing using Continues Wave-Laser Scanning Annealing (CW-LSA)" NANO KOREA, (2024).

    S.M. Kim, M.G. Kwon, T. Woo, K.S. Kim, Y.S. Lee, H.J. Hwang, J. Kim and B.H. Lee "Ultra-thin and High-quality Pt-Silicidation using CW Laser Annealing Process", 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA), (2024).

    김규헌, 김민재, 이용수, 김승모, 이해원, 황현준, 이병훈*, "플라즈마 처리를 이용한 Tellurium FET 의 히스테리시스 개선" The 31th Korean Conference of Semiconductors (KCS), 2024.

    김민재, 이용수, 김규헌, 김승모, 이해원, 전재현, 황현준, 이병훈*, "P 형 Tellurium FET 의 저온 특성 분석" The 31th Korean Conference of Semiconductors (KCS), (2024). (Best poster award)

    이찬빈, 김승모, 황현준, 이병훈*, "Morphotropic phase boundary 구조를 갖는 Hf 유전막 특성 연구" The 31th Korean Conference of Semiconductors (KCS), 2024.

    이해원, 김승모, 이용수, 김민재, 전재현, 황현준, 이병훈*,  "극박막 상복합 ZnO 영미분전도소자의 1/f 노이즈 특성 연구" The 31th Korean Conference of Semiconductors (KCS), (2024).

    H.W. Lee, S.M. Kim, Y.S. Lee, M. Kim, J.H. Jun, H.J. Hwang and B.H. Lee, "Electrical Characteristics of Zero Differential Transconductance Thin Film Transistor", NANO KOREA, (2023).

    S.M. Kim, M.G. Kwon, H.W. Lee, K.S. Kim, B. Kang, H. Choo, J.H. Park, R.K. Baek, H.J. Hwang and B.H. Lee*, “Study of continuous-wave RGB laser annealing for the activation of phosphorus/boron-doped Si deep junction with high scan speed”, IEEE Electron Devices Technology and Manufacturing (EDTM)Conference (2023). (Best poster award)

    H.W. Lee, S.Y. Kim, H.I. Lee, Y. Lee, S.M. Kim, H.J. Hwang and B.H. Lee “Electrical characteristics of sub-5nm SnO2 deposited using Atomic Layer Infiltration (ALI) process”, IEEE Electron Devices Technology and Manufacturing (EDTM) Conference (2023).

    M. Kim, Y. Lee, H. Kwon, J. Lee, S.M. Kim, H.W. Lee, J.H. Jun, H.J. Hwang and B.H. Lee*, “Channel thickness dependent optical bandgap observed from the p-type tellurium thin film transistor”, IEEE Electron Devices Technology and Manufacturing (EDTM)Conference (2023).

    J. Jeung, H.M. Ko, S.J. Yang, H. Park, T. Seo, S.M. Kim, B.H. Lee, K. Cho, Y. Chung, "IGZO Phototransistor with Ultrahigh Sensitivity Realized by Incorporating PM6:Y6 Bulk Heterojunction", IEIE Summer Conference, (2023).

    김민재, 이용수, 권희진, 김승모, 이해원, 전재현, 황현준, 백승훈, 이병훈, “Encapsulation을 이용한 p형 Tellurium TFT의 히스테리시스 특성 개선”, The 30th Korean Conference on Semiconductors (KCS) (2023).

    이해원, 김승모, 김소영, 김민재, 이호인, 이용수, 전재현, 황현준, 이병훈, “n형 영미분전도 소자의 노이즈 특성에 관한 연구”, The 30th Korean Conference on Semiconductors (KCS) (2023).

    김승모, 김기성, 추형석, 김민재, 이해원, 황현준, 이병훈 “Green laser를 이용한 ALD-HZO 강유전체 특성 구현 연구”, The 30th Korean Conference on Semiconductors (KCS) (2023). (Best poster award)

    이용수, 권희진, 김민재, 김승모, 전재현, 이해원, 황현준, 이병훈, “패터닝 방법을 이용한 유,무기 TFT 기반의 논리 응용 회로 시연”, The 30th Korean Conference on Semiconductors (KCS) (2023).

    M.G. Kwon, S.M. Kim, C.H. Kim, H.J. Hwang and B.H. Lee*, “Development of high speed graphene/Si heterojunction photodetector using an isolated well tub structure”, Nano Convergence Conference (NCC) (2023).

    H.W. Lee, S.M. Kim, S.Y. Kim, M.J. Kim, H.I. Lee, Y. Lee, J.H. Jun, H.W. Hwang and B.H. Lee*, “Study on the noise characteristics in n-type zero-gm conduction device”, Nano Convergence Conference (NCC) (2023).

    M.J. Kim, Y. Lee, H.J. Kwon, S.M. Kim, H.W. Lee, J.H. Jun, H.J. Hwang and B.H. Lee*, “Improvement of hysteresis characteristics of p-type tellurium TFT using encapsulation layer”, Nano Convergence Conference (NCC) (2023).

    J. Yun, H. Park, S.M. Kim, B.H. Lee, Y. Chung, "Enhancing the Thermal Stability of the IGZO Transistors by Suppressing the Oxygen Diffusion into Metal Using Self-Assembled Monolayer for Nanoscale Devices" MRS Spring Meeting, San Francisco, US, (2023).

    이준호, 김승모, Muhammad Taqi, 이호인, 이용수, 권민규, 이해원, 황현준, 유원종, 이병훈, “2D 물질 기반 band modulation FET의 전기적 특성에 관한 연구”, The 29th Korean Conference on Semiconductors (KCS) (2022).

    권희진, 이용수, 김승모, 이준호, 김시현, 권민규, 황현준, 이병훈, “Polymer electret을 이용한 DNTT 기반의 비휘발성 OFET 메모리”, The 29th Korean Conference on Semiconductors (KCS) (2022).

    이해원, 김소영, 이호인, 이용수, 김승모, 황현준, 이병훈, “SnO2 삼진 로직 소자 제작 및 시간에 따른 소자 안정성 연구”, The 29th Korean Conference on Semiconductors (KCS) (2022).

    이용수, 김승모, 김기영, 김소영, 이호인, 권희진, 이해원, 황현준, 이병훈, “전류 증폭/억제를 이용한 이중 채널 P형 삼진 소자”, The 29th Korean Conference on Semiconductors (KCS) (2022).

    이호인, 김소영, 김승모, 이용수, 이해원, 권희진, 이준호, 황현준, 이병훈, “Performance merits of scaled ZnO stacked nanosheet channel ternary field effect transistor”, The 29th Korean Conference on Semiconductors (KCS) (2022).

    김승모, 이준호, 이용수, 이호인, 김시현, 권희진, 이해원, 황현준, Surajit Some, 이병훈, “저온 성장된 ZrO2 MIM 커패시터의 전기적 특성 향상 방법에 관한 연구”, The 29th Korean Conference on Semiconductors (KCS) (2022).

    J. Jeung, H.M. Ko, S.J. Yang, S.M. Kim, K. Cho, Y. Chung "Hybrid Phototransistor with Outstanding Photoresponsivity (> 2x108 A/W) Using Novel Organic Bulk Heterojunction Layer" International Meeting on Information Display (IMID), (2022).

    H.W. Lee, S.Y. Kim, H.I. Lee, Y. Lee, S.M. Kim, H.J. Hwang and B.H. Lee “Study on the stability of SnO2 stack channel ternary device”, Nano Korea (2022).

    H.J. Hwang, S.M. Kim, B.H. Kang, K.S. Kim, R.H. Baek and B.H. Lee*, “R-G-B CW laser annealing for Si source/drain activation”, Nano Korea (2022).

    S.M. Kim, S.Y. Kim, Y.S. Lee, J.H. Lee, C. Kim, H.J. Hwang and B.H. Lee*, “A study on improvement of electrical characteristics of MIM capacitors” Nano Convergence Conference (NCC) (2021).

    S.M. Kim, M.H. Nyugen, J.W. Oh, Y.S. Lee, S.C. Kang, H.I. Lee, C. Kim, S. Some, H.J. Hwang, and B.H. Lee*, “Drastic reliability improvement using H2O2/UV treatment on HfO2 for heterogeneous integration”, IEEE International Reliability Physics Symposium (IRPS) (2021).

    이용수, 김채은, 김소영, 김시현, 이호인, 김승모, 김기영, 황현준, 이병훈, “삼진 상보 보완 회로를 위한 그래핀 기반의 P-type 삼진 로직 소자”, The 27th Korean Conference on Semiconductors (KCS) (2020).

    김승모, 김소영, 이호인, 이용수, 유태진, 김시현, 황현준, 이병훈, “화학적 도핑 방법을 이용한 그래핀 일함수 조율의 전기적 특성 분석”, The 27th Korean Conference on Semiconductors (KCS) (2020).

    이호인, 김소영, 김승모, 이용수, 황현준, 이병훈, “Implementation of pseudo n-type ternary analog to digital converter using ZnO nanosheet stack channel field-effect-transistor”, The 27th Korean Conference on Semiconductors (KCS) (2020).

    김시현, 유태진, 권민규, 이용수, 김승모, 황현준, 이병훈, “MOS 커패시터가 내장된 그래핀/Ge 쇼트키 접합 광소자" The 27th Korean Conference of Semiconductors (KCS), (2020).

    S.Y. Kim, S.R. Kim, S.M. Kim, Y.S. Lee, H.I. Lee, H.W. Lee, K. Kim, H.J. Hwang, and B.H. Lee*, “A study on the electrical characteristic of ultrathin oxide semiconductor field effect transistor”, The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2020).

    H.I. Lee, Y.S. Lee, S.M. Kim, S.Y. Kim, H.J. Hwang, and B.H. Lee*, “Demonstration of frequency doubler using ZnO/DNTT antiambipolar transistor with high peak to valley ratio (>106)”, The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2020).

    S.M. Kim, H.I. Lee, S.Y. Kim, Y.S. Lee, H.J. Hwang, and B.H. Lee*, “A study on the degradation mechanism of vertical stacked ZnO TFT”, The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2020).

    Y.S. Lee, S.M. Kim, H.I. Lee, S.Y. Kim, C. Kim, H.J. Hwang, and B.H. Lee*, “Low temperature and parameter controllable ZnO/DNTT anti ambipolar transistor and its ternary application”, The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2020).

    S.Y. Kim, K. Kim, A.R. Kim, H.I. Lee, Y.S. Lee, S.M. Kim, H.W. Lee, H.J. Hwang, and B.H. Lee*, “Electrical performance of stack channel ternary logic device depending on the carrier concentration of ZnO”, Nano Korea (2020).

    Y.S. Lee, H.J. Kwon, H.I. Lee, S.Y. Kim, S.M. Kim, K. Kim, H.W. Lee, H.J. Hwang, and B.H. Lee*, “Electrical performance of p-type ternary logic device and its circuit application”, Nano Korea (2020).

    H.W. Lee, S.Y. Kim, S.M. Kim, H.I. Lee, H.J. Hwang, and B.H. Lee*, “A study on the atomic layer deposited tin oxide channel for thin film transistor”, Nano Korea (2020).

    M.H. Nguyen, S.M. Kim, H.J. Hwang and B.H. Lee*, "A study of enhancement electrical properties of high-k dielectric grown at low temperature", Nano Korea (2020).

    김민재, 김소영, 이용수, 김승모, 이병훈, “Edge Contact Length가 그래핀-ZnO 배리스터에 미치는 전기적 특성 분석" The 26th Korean Conference of Semiconductors (KCS), 2019.

    김채은, 김승모, 허선우, 이용수, 김기영, 김민범, 이병훈, “유기물 반도체 두께에 따른 그래핀/DNTT 배리스터의 전기적 특성 변화 분석" The 26th Korean Conference of Semiconductors (KCS), (2019).

    김민범, 허선우, 이호인, 김승모, 김채은, 민성욱, 이병훈, “게이트 유전체에 따른 그래핀-ZnO 배리스터의 전기적 특성 분석”, The 26th Korean Conference on Semiconductors (KCS) (2019).

    이용수, 김승모, 김소영, 이호인, 허선우, 이병훈, “그래핀 성장 조건에 따른 그래핀/구리 배선의 전자이주현상 변화”, The 26th Korean Conference on Semiconductors (KCS) (2019).

    허선우, 김기영, 이호인, 이용수, 김승모, 황현준, 이병훈, “Graphene barristor based rectifier for dc level shift”, Nano Convergence Conference (NCC) (2019). (Best poster award)

    김기영, 허선우, 이호인, 김승모, 김채은, 이린, 황현준, 성명모, 이병훈, “회로 설계 관점에서의 삼진 논리 소자 최적화 방향 제시”, Nano Convergence Conference (NCC) (2019).

    H.I. Lee, S. Heo, S.M. Kim, Y.S. Lee, n. Long, H.J. Hwang, M.M. Sung, and B.H. Lee*, “Implementation of pseudo-n type ternary logic circuits using double stacked ZnO composite nanolayer Field-Effect-Transistors", Nano Korea (2019).

    Y.S. Lee, C. Kim, S.Y. Kim, K. Kim, S.M. Kim, S. Heo, H.I. Lee, C.H. Kim, H.J. Hwang, and B.H. Lee*, “Structural improvement of DNTT graphene barristor by vertical drain electrode", Nano Korea (2019).

    S.M. Kim, Y.S. Lee, S. Heo, H.I. Lee, M.G. Kwon, H.J. Hwang, and B.H. Lee*, “Pure physical defects formation using AFM lithography on graphene channel", Nano Korea (2019).

    S.Y. Kim, S. Heo, K. Kim, M.W. Son, S.M. Kim, H.I. Lee, Y. Lee, H.J. Hwang, M.H. Ham, and B.H. Lee*, “Demonstration of ternary devices and circuits using dual channel graphene barristors”, IEEE ISMVL (2019).

    김기영, 허선우, 김소영, 이혜지, 김윤지, 이호인, 김승모, 이병훈, "간단한 그래핀 패턴을 이용한 저항 제작 및 특성 연구", The 25th Korean Conference on Semiconductors (KCS) (2018).

    김승모, 강수철, 임성관, 허선우, 이호인, 이용수, 이병훈, "동작 메커니즘에 기반한 Tunnel FET의 신뢰성 측정법에 관한 연구", The 25th Korean Conference on Semiconductors (KCS) (2018).

    이호인, 허선우, 김시현, 김윤지, 김승모, 김기영, 이용수, 이혜지, 이병훈, "ZnO:N-그래핀 접합 배리서터의 TiO2 층 페시베이션 효과", The 25th Korean Conference on Semiconductors (KCS) (2018).

    허선우, 이호인, 김기영, 이영곤, 박호경, 이석규, 김승모, 노진우, 이병훈, "DRAM의 센싱 margin 개선을 위한 MIM capacitor 의 주파수분산특성연구", The 25th Korean Conference on Semiconductors (KCS) (2018).

    H.I. Lee, S. Heo, K. Kim, H.J. Lee, S.M. Kim, Y.S. Lee, T.J. Yoo, and B.H. Lee*, “Implementation of pseudo n and pseudo p type inverter using graphene barristor”, The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2018).

    T.J. Yoo, W.S. Kim, S.K. Lee, K.E. Chang, Y.S. Lee, S. Heo, H.I. Lee, S.M. Kim, C.H. Kim, M.G. Kwon, H.J. Hwang, J.Y. Jo, and B.H. Lee*, “Broadband graphene Bi2Te3 nanowire hybrid photodetector with improved photoresponsivity”, The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2018).

    S. Heo, K. Kim, S.M. Kim, H.I. Lee, H. Lee, Y.S. Lee, S.Y. Kim, and B.H. Lee*, “Insight for optimization of graphene barristor based devices and circuits”, The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2018).

    K. Kim, S. Heo, S.M. Kim, S.M. Kim, H.I. Lee, B. Allouche, S. Kang, and B.H. Lee*, “Multi-threshold graphene barristor for standard ternary inverter”, The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2018).

    S.Y. Kim, Y.S. Lee, J.Y. Jeong, S.M. Kim and B.H. Lee*, "Improvement in Electrical Characteristic of ZnO-graphene Barristor by Edge Contact Length Controlling", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2018). (Best poster award)

    S.M. Kim, S. Heo, H.I. Lee, Y.S. Lee, S.Y. Kim, T.J. Yoo, and B.H. Lee*, “Schottky barrier height extraction of p type semiconductor barristor”, The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2018).

    Y.S. Lee, S. Heo, H.J. Hwang, H.I. Lee, S.M. Kim, T.J. Yoo, and B.H. Lee*, “Nano-Electro-Mechanical (NEM) switch and Schmitt trigger application using multilayer graphene”, The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) (2018).

    S.M. Kim, S. Heo, H.J. Lee, H.I. Lee, K. Kim, Y.J. Kim, S.Y. Kim, B. Allouche, and B.H. Lee*, “Vth control in p-type graphene barristor using a polymer doping process”, Int. Conf. on Solid State Device and Materials (SSDM) (2018).

    S.C. Kang, S.K. Lee, S. Heo, S.M. Kim, S.K. Lim and B.H. Lee*, “Reliability characteristics of MIM capacitor studied using delta C-F characteristics, IEEE International Reliability Physics Symposium (IRPS), (2018).

    S.Y. Kim, H.J. Lee, S.M. Kim, K.Y. Kim, K.E. Chang, S.K. Lee, H.J. Hwang, S. Heo and B.H. Lee*, "Device applications of chemically doped graphene," Silicon Nanoworkshop (SNW), (2018).

    Y.S. Lee, S.Y. Kim, S.M. Kim, K.E. Chang, H.I. Lee, S. Heo, and B.H. Lee*, “Contact resistance properties for Nickel-n-type Silicon using graphene interlayer”, Nano Korea (2018).

    S. Heo, S.M. Kim, K. E. Chang, H.I. Lee, K. Kim, T. J. Yoo, S.Y. Kim, Y.S. Lee, and B.H. Lee*, “Impact of charged impurities on graphene barristor”, Nano Korea (2018).

    강수철, 노진우, 임동환, 김승모, 임성관, 최창환, 이병훈, “H2 Annealing에 의한 Tunnel FET Inverter의 전기적 특성 변화" The 24th Korean Conference on Semiconductors (KCS), (2017).

    이용수, 황현준, 노진우, 김승모, 유지애, “다층그래핀을 이용한 재구성형 나노스케일 기계적 스위치" 이병훈, The 24th Korean Conference on Semiconductors (KCS), (2017).

    S. Heo, Y.J. Kim, K.J. Han, K.Y. Kim, H.I. Lee, S.M. Kim, S.K. Lee, K.E. Chang, J.H. Kim, M. H. Yoon, and B.H. Lee*, “Low temperature integrated complementary graphene barristor to overcome the thermal budget in monolithic 3D integration”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC) (2017).

    S.C. Kang, S.K. Lee, J. Noh, S. Heo, S.M. Kim, S.K. Lim, and B.H. Lee*, “Frequency dependent capacitance due to the stress polarity dependent defects in Metal/high- dielectric/Metal capacitor”, 48th IEEE Semiconductor Interface Specilaists Conference (SISC), (2017)

    S.C. Kang, S.K. Lee, J. Noh, S.M. Kim, S.K. Lim, and B.H. Lee*, “Stress injection polarity dependent asymmetric trap generation in MIM capacitors”, Int. Workshop on Dielectric Thin Films (IWDTF), (2017).

    S.C. Kang, D. Lim, S. Lim, J. Noh, S.M. Kim, S.K. Lee, C. Choi, and B.H. Lee*, “Effect of high pressure annealing on the reliability of FDSOI tunneling FET”, Int. Conf. on Solid State Device and Materials” Int. Conf. on Solid State Device and Materials (SSDM), (2017)

    김승모, 정욱진, 임성관, 강수철, 이병훈, “Tunnel FET의 고유한 열화메카니즘에 관한 연구" 23rd Korean Conference on Semiconductors(KCS) (2016)

    강수철, 김용훈, 정욱진, 박우진, 김승모, 이병훈 “FinFET의 Bipolar AC stress에 의한 Reliability 특성” The 23th Korean Conference on Semiconductors (KCS) (2016). (Best poster award)

    U. Jung, S.M. Kim, D. Lim, K.E. Chang, Y.J. Kim, S.C. Kang, S.K. Lim, C. Choi and B.H. Lee*, “Mechanism of subthreshold swing degradation in p-type tunnel FETs", IEEE Semiconductor Interface Specialists Conference (SISC), (2015).