Jung, Uk-Jin (Ukjin Jung)
Ph.D 2010-2015
- Current affiliation
- 2016 - , SAMSUNG System LSI
- Education
since 2012 : Ph.D., Dept. of MSE, GIST
2010 – 2012 : M.S., Dept. of MSE, GIST
2006 – 2010 : B.S., Dept. of Chemical Engineering, Hanyang University
- Research Interest
Electrical characterization method for semiconductor devices
Electrical characterization for Graphene FET
- Publication
-
Journals
22 S.C. Kang, S.M. Kim, U.J. Jung, Y.H. Kim, W.J. Park, B.H. Lee*, "Interface state degradation during AC Positive Bias Temperature Instability Stress,” Solid State Electronics 158, pp.46-50(2019).
21 S.Y.Kim, Y.J.Kim, U.Jung, B.H.Lee*, “Chemically induced Fermi Level Pinning Effects of High-k Dielectrics on Graphene," Scientific Reports 8(1), pp.2992 (2018).
20 Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ," Scientific Reports 6, p.39393 (2016).
19 Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, “ Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress ," IEEE Electron Device Letters 37(4), pp.366 (2016).
18 W.J.Park, Y.H.Kim, U.J. Jung, J.H.Yang, C. Cho, Y.J.Kim, S.M.N Hasan, H.G.Kim, H.B.R.Lee, B.H.Lee*, “Unipolar WS2 Field Effect Transistors using Fermi level de-pinning contact metals," Advanced Electronic Materials, p.1500279 (2015).
17 U.J. Jung, J.J. Kim, Y.H. Kim, Y.G. Lee, S.C Song, J. Blatchford, B. Kirkpatrick, H.Niimi, B.H.Lee*, “Dipole-Induced Gate Leakage Reduction in Scaled MOSFETs with a Highly Doped Polysilicon/Nitrided Oxide Gate Stack,” Microelectronic Engineering, 142, p.1 (2015).
16 S.C.Lee, S.K.Lee, C.G.Kang, C.Cho, Y.G.Lee, U.J.Jung, and B.H.Lee*, "Graphene transfer in vacuum yielding a high quality interface," Carbon, 93, p.286-294 (2015).
15 Y.H. Kim, Y.G. Lee, U. Jung, J.J. Kim, M.H. Choe, K.T. Lee, S.W. Pae, J.W. Park, B.H.Lee*, "Extraction of Effective Mobility from nMOSFETs with Leaky Gate Dielectric using Time Domain Reflectometry," IEEE Trans. Elect. Dev., 62(4), P.1092 (2015).
14 Y.J.Kim, Y.G.Lee, U.Jung, S.Lee, S.K.Lee, and B.H.Lee*, “A Facile Process to Achieve Hysteresis-free and Fully Stabilized Graphene Field-effect Transistors”, vol.7, 4013-4019, Nanoscale, (2015). Also selected as 2015 Hot Papers in Nanoscale
13 U.Jung, Y.J.Kim, Y.H.Kim, Y.G.Lee, and B.H.Lee* "Extraction of the Interface State Density of Top Gate Graphene Field Effect Transistors", on-line published, IEEE Electron Device Letters, 36(4), p.408 (2015)
12 Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, " Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization", Jpn. J. of Appl. Phys. 53, 08LC02, (2014). (Special Issue)
11 U.Jung, Y.G.Lee, C.G.Kang, S.C.Lee, J.J.Kim, H.J.Hwang, S.K.Lim, M.H.Ham, B.H.Lee*, “Quantitatively estimating defects in graphene devices using discharge current analysis method," Scientific Reports 4, 4886 (2014).
10 U. Jung, Y.G. Lee, C.G. Kang, S.C Lee, B.H. Lee*, “Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method,” Appl. Phys. Lett. 104, 151604 (2014).
9 C.G. Kang, S.K.Lee, T.J. Yoo, W. Park, U. Jung, J. Ahn, B.H. Lee*, “Highly Sensitive Wide Bandwidth Photodetectors using Chemical Vapor Deposited Graphene,” Appl. Phys. Lett. 104, 161902 (2014).
8 J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee*, " Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys", IEEE Trans. Electron Device, 60(11), p.3683 (2013).
7 C.Cho, Y.G.Lee, U.Jung, C.G.Kang, S.K.Lim, H.J.Hwang, H.J.Choi, B.H.Lee*, “Correlation between the hysteresis and the initial defect density of graphene,” Appl. Phys. Lett., 103, p.083110, Aug. (2013).
6 Y.G.Lee, Y.J.Kim, C.G.Kang, C.Cho, H.J.Hwang, U.J. Jung, B.H.Lee*, "Influences of extrinsic factors on the accuracy of mobility extraction for graphene MOSFETs," Appl. Phys. Lett. 102(9), 093121 (2013).
5 U. Jung, Y.G.Lee, J.J. Kim, S.K.Lee, I. Mejia, A. Salas-Vwilasenor, M. Quevedo-Lopez, B.H.Lee*, "Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett., 101, 182106, Nov. (2012)
4 Y.Kim, Y.G.Lee, M.Kim, C.G. Kang, U.Jung,J.J.Kim, S.C.Song, J. Blatchford, B. Kirkpatrick, H. Niimi, K.Y.Lim, B.H.Lee*, "Capacitance analysis of highly leaky Al2O3 MIM capacitor using time domain reflectometry," IEEE Electron Dev. Lett., 33(9), p. 1303-1305, Jul. 2012.
3 J.J. Kim, M. Cho, L.Pantisano,Y.G.Lee, U. Jung, T.Chiarella, M. Togo, N.Horiguchi, G.Groeseneken, B.H.Lee*, "Process dependent N/PBTI characteristics of TiN Gate finFET," IEEE Elect. Dev. Lett.,33(7), p.937, Jul. (2012)
2 B.H.Lee, Y.G.Lee, U.J.Jung, Y.H.Kim, H.J. Hwang, J.J. Kim, C.G.Kang, "Issues with the Electrical Characterization of Graphene Devices," Carbon Letters, Vol. 13(1), Jan. 2012. (Invited)
1 Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Jeong, S. Seo, R. Choi, B.H. Lee*, “Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics,” Appl. Phys. Lett., 98, 183508, 2011. Also, published in Virtual J. of Nanoscale Science and Technology, 23(20), May 23, 2011.
Conferences
국내 37 김윤지, 김소영, 정욱진, 박우진, 이상경, 이병훈, "고압수소열처리 조건에 따른 그래핀 전계효과소자의 특성 최적화", 23rd Korean Conference on Semiconductors(KCS), 2016
국내 36 김승모, 정욱진, 임성관, 강수철, 이병훈, "Tunnel FET의 고유한 열화메카니즘에 관한 연구", 23rd Korean Conference on Semiconductors(KCS), 2016
국내 35 강수철, 김용훈, 정욱진, 박우진, 김승모, 이병훈, "FinFET의 Bipolar AC Stress에 의한 Reliability 특성", 23rd Korean Conference on Semiconductors(KCS), 2016, Best poster award.
국제 34 U. Jung, S.M. Kim, D. Lim, K.E. Chang, Y.J. Kim, S.C. Kang, S.K. Lim, C. Choi and B.H. Lee, “Mechanism of subthreshold swing degradation in p-type tunnel FETs", SISC, (2015)
국제 33 Y.J. Kim, S.Y. Kim, U. Jung, S.K. Lee, K.E. Chang, C. Cho and B.H. Lee, "Fermi level of graphene under a metal contact modulated by high pressure hydrogen anneal", SISC, (2015)
국제 32 S.K. Lee, U. Jung, C. Cho, T.J. Yoo, A.N.R. Reza, H.I. Lee, and B.H. Lee, "The role of interface charge traps in the RF operation of graphene devices", SISC, (2015)
국제 31 Y.J. Kim, U. Jung, and B.H. Lee, "Influence of high pressure oxygen annealing on graphene field-effect transistors with Al2O3 passivation layer", IUMRS, (2015)
국내 30 이상경, 김윤지, 정욱진, 김용훈, 유태진, 이병훈, “Buried gate Graphene FET의 게이트 절연막 scaling 연구”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 29 박우진, 김용훈, 이상경, 정욱진, 양진호, 조천흠, 김윤지, 임성관, 이병훈, “MoS2 전계효과 트랜지스터의 컨택 저항 개선 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 28 강수철, 이영곤, 김용훈, 정욱진, 박우진, 김윤지, 이병훈, “FinFET의 AC Stress Reliability 특성”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 27 김용훈, 정욱진, 강수철, 이영곤, 이병훈, “TDR 분석법을 이용한 미세전계효과소자의 Effective Moliblity 추출 방법”, 22nd Korean Conference on Semiconductors(KCS), 2015
국내 26 정욱진, 김윤지, 김용훈, 김소영, 이병훈, “Top gate graphene FET의 Fermi level과 계면결함 밀도의 상관관계 연구”, 22nd Korean Conference on Semiconductors(KCS), 2015, Best poster award.
국제 25 W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, I.S. Hwang, H.B.R.Lee, and B.H.Lee, “Contact Resistance Reduction using Fermi Level De-pinning Layer for MoS2 FETs”, Tech. Dig of IEDM, (2014).
국제 24 W.J.Park, Y.H.Kim, S.K.Lee, U.Jung, J.H.Yang, C.Cho, Y.J.Kim, S.K.Lim, and B.H.Lee, “Contact Resistance Reduction for MoS2 FETs with Insulating Layers”, 44th IEEE Semiconductor Interface Specilaists Conference (SISC), (2014).
국제 23 K.E.Chang, U.Jung, T.J.Yoo, J.Noh, B.H.Lee, “Gate-tunable Wide Bandwidth Photodetector using Graphene/Silicon Schottky Contact", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014), Best poster award.
국제 22 U.Jung, Y.Kim, S.Lee B.H.Lee, “Novel Method to Extract the Defect Levels of Charge Traps at Top Gate Graphene FETs", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2014)
국내 21 정욱진, 이병훈 “Effect of duty cycle control in discharge current analysis (DCA) method used to assess the interfacial qualities of graphene FETs”, The 1st Korean Graphene Symposium, (2014).
국내 20 김윤지, 이영곤, 강창구, 정욱진, 이상철, 이상경, 이병훈, “Optimization of Integration Process for Stabilized Graphene MOSFET”, 21st Korean Conference on Semiconductors(KCS), 2014.
국내 19 이재은, 정욱진, 이병훈, “Interfacial Charge Density measurement for Graphene Transistor using Discharge Current Analysis (DCA) Method”, 21st Korean Conference on Semiconductors(KCS), 2014.
국제 18 U.Jung, J.E.Lee, Y.G.Lee, Y.J.Kim, B.H.Lee*, "Monitoring of interfacial reactions using discharging current from graphene FETs", IEEE SISC, Washington, (2013).
국제 17 C.G.Kang, S.H.Choe, S.K.Lee, U.Jung, W.Park, Y.G.Lee, T.J.Yoo, and B.H.Lee, “Highly sensitive Al2O3 passivated CVD graphene photodetectors for UV to IR region”, Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).
국제 16 U.Jung, J.E. Lee, Y.G. Lee, J.J. Kim, Y.H. Kim, and B.H.Lee*, “Interfacial defects at top gate graphene FETs investigated using a novel discharging current measurement method”, Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).
국제 15 Y.H. Kim, S.H.C. Baek, C.H. Jeon, Y.G. Lee, J.J. Kim, U.J. Jung, S.H. Lee, and B.H. Lee, “Characterization of ultra-thin dielectric using time domain reflectometry" Int. Workshop on Dielectric Thin Films. (IWDTF) , (2013).
국제 14 W.J. Park, Y.G. Lee, J.J. Kim, S.K. Lee, C.G. Kang, C. Cho, S.K. Lim, U. Jung, W.K. Hong, and B.H.Lee, “Reliability Characteristics of MoS2 FETs”, Int. Conf. on Solid State Device and Materials(SSDM), (2013)
국제 13 B.H. Lee, Y.G.Lee, C.G.Kang, U.J.Jung, S.C.Lee, Y.J.Kim, “Electrical characterization of Graphene Field Effect Transistor”, UKC, (2013), invited.
국내 12 장경은, 김진주, 김민우, 이상경, 정욱진, 김용훈, 이영곤, 이병훈, “Temperature effect on the intrinsic reliability of HfxAl1-xOy dielectric”, 20th Korean Conference on Semiconductors(KCS), (2013).
국내 11 정욱진, 김진주, 이재은, 이영곤, 김용훈, 강창구, 장경은, 이병훈, “연속적인 펄스를 이용한 Graphene channel MOSFETs 결함의 전기적 분석방법 연구”, 20th Korean Conference on Semiconductors(KCS), (2013).
국내 10 이재은, 정욱진, 김진주, 이영곤, 김용훈, 강창구, 장경은, 이병훈, "Majority Carrier 종류에 따른 Graphene channel의 펄스응답전류 특성 분석”,20th Korean Conference on Semiconductors(KCS), (2013).
국제 9 Y.G. Lee, C.G. Kang, C. Cho, Y.H. Kim, H.J. Hwang, J.J.Kim, U.J. Jung, E.J.Park, M.W.Kim, B.H. Lee, "Mechanisms of Ambient Dependent Mobility Degradation in the Graphene MOSFETs on SiO2 Substrate," Silicon Nanoworkshop (SNW), (2012).
국내 8 Y.H.Kim, Y.G.Lee, J.J.Kim, U.Jung, S.C.Song, B.H.Lee, “Capacitance-voltage measurement of leaky Al2O3 MIM capacitor using Time Domain Reflectometry (TDR)", 19th Korea Semiconductor Conference (KSC), (2012).
국제 7 Y.G. Lee, C.G. Kang, Y.H. Kim, C.H. Cho, U.J. Jung, S.K. Lee, B.H. Lee, "Study on the Origin of Hysteretic Characteristics of Graphene Field Effect Transistor," IEEE SISC, (2011).
국제 6 B.H.Lee, Y.G.Lee, C.G. Kang, H.J.Hwang, Y.H. Kim, J.J. Kim, U.J. Jung, “Electrical Characterization Methods for graphene MOSFET,” Workshop on Nano and Giga Challenges, Moscow, (2011), Invited.
국내 5 Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Chung, H. Yang, S. Seo and B.H. Lee "Short Pulse Characterization of Hysteric Characteristics of Graphene Field Effect Transistor", 18th Korean Conference on Semiconductors (KCS), (2011).
국내 4 U.J. Jung, Y.G. Lee, J.J. Kim, I. Mejia, A. Salas-Villasenor, M. Quevedo-Lopez, J. Kim and B.H. Lee "A Study on the Electrical Characterization methods for CdS channel MOSFETs", 18th Korean Conference on Semiconductors (KCS), (2011).
국제 3 Y.G. Lee, C.G. Kang, S.K. Lee, K.J. Choi, C.H. Cho, H.J. Hwang, S.Y. Lee, S.K. Lim, U.J. Jung, and B.H. Lee, "Characteristics of Very Low Temperature ALD Al2O3 Gate Dielectric for Top Gate Graphene MOSFET Applications", Ext. Abs. of Int. Workshop on Dielectric Thin Film (IWDTF), p.21, (2011).
국제 2 B.H. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, "Feasibility of Mechanical Switch Device using a Graphite Electrode", IMRS, Cancun, (2010), Invited.
국제 1 B.H. Lee, C.H. Cho, S.K. Lim, S.Y. Lee, H.J. Hwang, Y.G. Lee, U.J. Jung, C.G. Kang, "Feasibility of Wrinkle Free Graphene Process", Abs. of American Vac. Soc. Symposium, Albuquerque, p.61, (2010), Invited
- Other Expertise
-
Technical Skills
Schottky barrier measurement using Internal Photo Emission spectroscopy (IPE)
Cryogenic dI-V measurement
Raman spectroscopy measurement and analysis
Material deposition (thermal evaporator)
Etching (RIE, other chemical etching)
Charge pumping measurement (pulse generator)
Capacitance-Voltage measurement (Agilent 4294)
Si MOSFETs electrical characterization (current –voltage measurement)
Photolithography process
- Course Work
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Master
Device Physics for Nanoscale solid devices
Electronic Properties of Materials
Nanoelectronics
Semiconductor Processing
Post CMOS Hybrid Device Technology
Electrical characterization for advanced nano-scale devices
Organic Materials for Electronics and Photonics I
Nanobiomaterials: Preparation and Characterization
Ph. D
Flexible electronics: materials and Applications
transmission Electron Microscopy & crystal characteristics
Introduction to patents
Introduction to Materials Science and Engineering
Solid State Electrochemistry
Advanced Thermodynamics