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Total 329건 1 페이지

2024
329

K.K.Kim, M.J. Kim, Y.S. Lee, H.W.Lee, J.H. Lee, S.B. Yoon, H.J. Hwang, B.H.Lee, "Demonstration of Vertically Stacked ZnO/Te Complementary Field-effect transistor" Submitted to ACS Nano, 2024.
328

J.H. Jun, Y.S. Lee, H.W. Lee, M.J. Kim, K.Kim, B.H.Lee, "Applications of ZnO-Te Anti-Ambipolar Switch for Dratic Power and Area Scaling" Submitted to ACS Nano, 2024.
327

Y.S. Lee, H.W. Lee, S.J. Kim, J.M. Park, B.H. Lee and C.G. Kang, "Enhanced High-Energy Proton Radiation Hardness of ZnO Thin-Film Transistor with Passivation Layer" Submitted to Nano Convergence, 2024.
326

H.W.Lee, S.M.Kim, M.J. Kim, J.H. Jun, Y.S. Lee, K.Y. Kim, H.J.Hwang, M.M.Sung, B.H.Lee, "Elimination of 1/f noise from MOSFETs using phase composite ZnO quantum well channel structure" Submitted to Science, 2024.
325

D.C.C. Tran, G.H. Pham, T.T.H. Chu, J. Kim, J.K. Jeong, S.I. Im, B.H. Lee and M.M. Sung, "Layer-by-Layer Growth of Two-dimensional Tellurium Thin Films via Ultra-High Pressure Atomic Layer Deposition for p-Type Semiconductor" Submitted to Nano Letters, 2024.
324

K.Y.Kim, S.M.Kim, S.Y. Kim, Y.S.Lee, H.W.Lee, S.H Kang, B.H.Lee, "Area and Power Efficient Ternary Serial Adder Using ZnO Stack Channel FETs" In revision, Advanced Electronic Materials, 2024.
323

S.M.Kim, M.Kim, C.B.Lee, U. Choi, M.G. Kwon, K.S. Kim, J. KIm, H.J. Hwang, B.H.Lee, "Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium-Zirconium Oxide" In revision, ACS Applied Materials and Interfaces, 2024.
322

S.M.Kim, J.H.Jun, J.Lee, M. Taqi, H. Shin, S. Lee, H.Lee, W.J.Yoo, B.H.Lee, "Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback FET" Nanomaterials, 2024.
321

D.H. Lee, S.M. Kim, J.C. Park, Y.S. Jung, S.Y. Lee, B.H. Lee, S. Lee, "Enhancing Reliability in Oxide-Based Memristors Using Two-Dimensional Transition Metal Dichalcogenides" Applied Surface Science, 679, 161216, 2024.
320

M.J. KIm, Y.S. Lee, K.H. Kim, G.H.Pham, K.Y.Kim, J.H.Jun, H.W. Lee, S.B. Yoon, H.J. Hwang, M.M.Sung, B.H.Lee, "Process to enable the hysteresis-free operation of ultrathin Te p-channel field effect transistors" Nanoscale Horizons, 2024. 10.1039/D4NH00339J.
319

S.M.Kim, M.G.Kwon, M.J.Kim, C.B.Lee, K.S.Kim, H.J.Hwang, J.Kim, B.H.Lee, "Extremely Thin (~2 nm) Proximity Pt Silicide Formation Process using Continuous-Wave Laser Scanning Anneal" IEEE Electron Device Letters, 45(10), 1941, 2024. 10.1109/LED.2024.3440910.
318

M.G.Kwon, C.H.Kim, S.M.Kim, T.J. Yoo, Y.S.Lee, H.J. Hwang, S.H.Lee, B.H.Lee, "Demonstration of Low Power and High Speed Graphene/Silicon Heterojunction Near-infrared Photodetector" Nanoscale Advances, 6, 3391-3398, 2024 (included in 2024 Popular Advances collection). https://doi.org/10.1039/D4NA00286E.
317

H.M.Ko, S.J. Yang. J. Jeung H.Park, W.Seo, S.M.Kim, B.H.Lee., K.Cho., Y. Chung, "IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction" Advanced Optical Materials, 12, 2303152, 2024.
316

J.H.Jun, Y.S.Lee, H.W.Lee, M.J. Kim, H.J.Hwang, B.H.Lee, "Area and Device Count Efficient Binary Logic Circuits using Anti-Ambipolar Switch Devices" Advanced Electronic Materials, 2300892, 2024. https://doi.org/10.1002/aelm.202300892.
2023
315

H.Hwang, S.M.Kim, B.H.Lee, "Pulsed I-V analysis of slow domain switching in ferroelectric Hf0.5Zr0.5O2 using graphene FETs" Advanced Electronic Materials, 2300511, 2023. https://doi.org/10.1002/aelm.202300511.
314

R. De, K.W. Jo, B.H.Lee, S.Some, K.T. Kim, "Microwave-assisted rapid synthesis of nitrogen-enriched amphibious carbon quantum dots for sensitive detection of ROS and multiple other applications" J. of Materials Chemistry B, 11, 6024-6043, 2023.
313

H.Hwang, S.Y. Kim, S.K.Lee, B.H.Lee*, "Reconfigurable Single-Layer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency" Nano Materials, 13 (7), 1203, 2023.03.
312

Y.S.Lee, H.J.Kwon, S.M. Kim, H.I. Lee, K.Y.Kim, H.W.Lee, S.Y. Kim, H.J. Hwang, B.H.Lee*, "Demonstration of p-type stack-channel ternary transistor using scalable DNTT patterning" Nano Convergence, 10 (1), 12, 2023.
311

H.J.Hwang, S.Y.Kim, S.K.Lee, B.H.Lee*, "Large scale graphene thermoelectric device with high power factor using gradient doping profile" Carbon, 201, pp.467-472, 2023.
2022
310

H.Jing, B. Lyu, Y. Yang, S. Beak, J.H.Park, B.H.Lee, J.Y. Lee, S.Lee,, "β-Mercaptoethanol-Enabled Long-Term Stability and Work Function Tuning of MXene" Small Science, 2(11), 2200057, 2022.
309

Y.S.Lee, S.M. Kim, K.Y. Kim, S.Y.Kim, H.I. Lee, H.J. Kwon, H.W. Lee, C.E. Kim, S. Some, H.J. Hwang, B.H. Lee*, "Dual-Channel P-Type Ternary Graphene-DNTT Barristor" Scientific Reports, 22(1), 19423, 2022.
308

M. Taqi, S. Mitta, F. Ali, M.S. Choi, I.Y. Moon, T.J. Yoo, C.S. Kim, B.H. Lee, B.D. Oh, W.J. Yoo, "Self-Powered 2D MoS2/WO¬x/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment" ACS Advanced Materials Interfaces, 9(32), 2201785, 2022.
307

W.D.Seo, W.J. Park, H.Y. Seo, S.Y. Oh, O.J. Kwon, S.H. Keong, D.H. Kim, M.J. Kim, S.K.Lee, B.H.Lee, B.J. Cho, "MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector" Applied Surface Sciences, 604, 154485, Aug.6, 2022. doi.org/10.1016/j.apsusc.2022.154485.
306

Y.S.Lee, S.M. Kim, H.I. Lee, S.M. Kim, S.Y.Kim, K.Y.Kim, H.J.Kwon, H.W.Lee, H.J. Hwang,S.H. Kang, B.H.Lee*, "Demonstration of anti-ambipolar switch and its applications for extremely low power ternary logic circuits" ACS Nano, 16(7), pp.1099-11003, 2022.
305

S.C.Kang, H.W.Jung, S.J.Chang, I.G. Choi, S.K. Lee, S.M. Kim, B.H.Lee, H.K. Ahn, J.W. Lim, "Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs" Current Applied Physics, 39, 128-132, 2022.
304

W.C. Kim, H.H. Kim, T.J. Yoo, J.Y. Lee, J.Y. Jo, B.H.Lee, S.S.S. Devi, G.Y. Jung, Y.S. Park, "Perovskite Multifunctional Logic Gates via Bipolar Photoresponse of Single Photodetector" Nature communications, 13(1), P.720, 2022.2.7. https://doi.org/10.1038/s41467-022-28374-w.
303

M.K.Gwon, C.H. Kim, K.E.Chang, T.J. Yoo, B.H.Lee*, "Performance enhancement of graphene/Ge near-infrared photodetector by modulating the doping level of graphene" APL Photonics, 7, 026101, 2022.
302

C.H. Kim, T.J. Yoo, M.G. Kwong, K.E. Chang, H.J. Hwang, B.H. Lee*, "High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction" Nanophotonics, 11(5), pp.1041-1049, 2022. 10.1515/nanoph-2021-0738.
301

H.I. Lee, S.Y. Kim, S.M. Kim, Y.S. Lee, H.W. Lee, S.H. Yu, H.J. Hwang, M.M. Sung, B.H.Lee*, "Performance Evaluation of Scaled ZnO Stacked Nanosheet Channel Ternary Field Effect Transistor" IEEE Electron Device Letters, 43(2), pp.323-326, 2022. 10.1109/LED.2021.3139225.
2021
300

A. Ali, S.Y.Kim, M. Hussain, S.H.A. Jaffery, G. Dastgeer, S. Hussain, B.T.P. Anh, J.W. Eom, B.H. Lee, J.W. Jung, "Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction" Nanomaterials, 11(11), p.3003, Nov. 10, 2021.

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