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Total 348건 10 페이지

2007
78

C.D.Young, D. Heh, A. Neugroschel, R.Choi, B.H.Lee, G.Bersuker, "Electrical characterization and analysis technique for high-k era" Microelectronics Reliability, 47, p.479-488, 2007.04.09. http://doi.org/10.1016/j.microrel.2007.01.053.
77

C.Y. Kang, R. Choi, S.C. Song and B. H. Lee, "Effects of Gate Edge Profile On Off-state Leakage Suppression in Metal Gate/High-k Dielectric Metal-Oxide-Semiconductor Field Effect Transistors" Appl. Phys. Lett., 90, 183501, 2007.04.30. http://doi.org/10.1063/1.2734381.
76

S. Joshi, C. Krug, D. heh, H.J. Na, H.R. Harris, J.W, Oh, P.D. Kirsch, P. Majhi, B. H. Lee, H.H. Tseng, R. Jammy, J.C. Lee, S.K. Banerjee, "Improved Ge Surface Passivation With Ultrathin SiOx Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack" IEEE Electron Device Letters, 28 (4), p.308-311, 2007.04.02. http://doi.org/10.1109/LED.2007.893274.
75

Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee, "Accurate series resistance extraction from capacitor using Time-Domain-Reflectometry" IEEE Electron Device Letters, 28 (4), p.279-281, 2007.03.26. http://doi.org/10.1109/LED.2007.891751.
74

G.Bersuker, J.H.Sim, C.S.Park, C.D.Young, S.V.Nadkarni, R.Choi and B. H. Lee, "Mechanism of electron trapping and characteristics of traps in HfO2 gate stacks" IEEE Transactions on Device and Materials Reliability, 7 (1), p.138-145, 2007.07.16. http://doi.org/10.1109/TDMR.2007.897532.
73

Y. Wang, K. P. Cheung, R. Choi, G. A. Brown, B. H. Lee, "Time Domain Reflectometry for capacitance-voltage measurement with very high leakage current" IEEE Electron Device Letters, 28 (1), p.51-53, 2006.12.26. http://doi.org/10.1109/LED.2006.887628.
72

M. Chang, M. Jo, H. Park, H. Hwang, B. H. Lee, and R.Choi, "Effect of F2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric" IEEE Elec. Dev. Lett., 28 (1), p.21-23, 2006.12.26. https://doi.org/10.1109/LED.2006.887941.
71

O. Sharia, A.Demkov, G.Bersuker, B. H. Lee, "Theoretical study of the insulator/insulator interface: Band alignment at the SiO2/HfO2 junction" Phys. Rev. B, 75, 035306, 2007.01.05. https://doi.org/10.1103/PhysRevB.75.035306.
2006
70

P.Kirsch, M.A.Quevedo-Lopez, S.A.Krishnan, G.Pant, M.J.Kim, R.M.Wallace, B.E.Gande, and B. H. Lee, "Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics" Appl. Phys. Lett., 89(24), 242909, 2006.12.13. https://doi.org/10.1063/1.2392992.
69

H.N. Alshareef, H.C.Wen, H.F. Luan, K. Choi, H.R. Harris, Y. Senzaki, P. Majhi, B. H. Lee, B.Foran, G. Lian, "Temperature dependence of the work function of ruthenium-based gate electrodes" Thin Solid Films, 515(4), 1294-1298, 2006.12. https://doi.org/10.1016/j.tsf.2006.03.026.
68

H.N. Alshareef, M. Quevedo-Lopez, H.C.Wen, H.R. Harris, P.Kirsch, P. Majhi, B. H. Lee, R. Jammy, D.J.Lichtenwalner, J.S.Jur, A.I.Kingon, "Work function engineering using lanthanide oxide interfacial layers" Appl. Phys. Lett., 89(23), 232103, 2006.12.04. https://doi.org/10.1063/1.2396918.
67

H.-C. Wen, H. R. Harris, C.D. Young, H.Luan, H.N. Alshareef, K. Choi, D.-L. Kwong, P. Majhi, G. Bersuker, and B. H. Lee, "On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-k Dielectrics" IEEE Elec. Dev. Lett., 27(12), 984-987, 2006.11.30. 10.1109/LED.2006.886711.
66

G. Bersuker, C. S. Park, J. Barnett, P.S. Lysaght, P. D. Kirsch, C.D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan and J. T. Ryan, "The effect of interfacial layer properties on the performance of Hf-based gate stack devices" J. Appl. Phys., 100(9), 094108, 2006.11.10. https://doi.org/10.1063/1.2362905.
65

K.S.Chang, M. Green , J. Suehle , E. Vogel , H. Xiong , J. Hattrick-Simpers , I. Takeuchi , O. Famodu , K. Ohmori, P. Ahmet , T. Chikyow , P. Majhi , B. H. Lee and M. Gardner, "Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO2 for the Advanced Gate Stack" Appl. Phys. Lett., 89(14), 142108, 2006.10.04. https://doi.org/10.1063/1.2357011.
64

G. Thareja, S. Rhee, H.-C. Wen, R. Harris, P. Majhi, B. H. Lee and J.C. Lee, "NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics" IEEE Elec. Dev. Lett., 27(10), 802, 2006.09.25. 10.1109/LED.2006.882521.
63

J.L.Gavartin, D.Munz Ramo, A.L.Shluger, G.Bersuker, B. H. Lee, "Negative oxygen vacancies in HfO2 as charge traps in high-k stacks" Appl. Phys. Lett., 89(8), 082908, 2006.08.24. https://doi.org/10.1063/1.2236466.
62

S. C. Song, M. M. Hussain, J. Barnett, B. S. Ju, and B. H. Lee, "Integrating dual work function metal gates in CMOS" Solid State Technology, 49(8), 47-50, 2006.08.
61

B. H. Lee, P. Kirsch, H. Alshareef, P. Majhi, R. Choi, S. Song, H. H. Tseng and R. Jammy, "Review of alternative gate stack technology research during the last decade" Ceramist, 9(4), 58-71, 2006.08.31.
60

H.K. Park, R. Choi, B. H. Lee, S.C. Song, M. Chang, C.D. Young , G. Bersuker, J.C. Lee and H. Hwang, "Decoupling of cold carrier effects in hot carrier reliability assessment of HfO2 gated nMOSFETs" IEEE Elec. Dev. Lett., 27(8), 662, 2006.07.24. 10.1109/LED.2006.878041.
59

K .Choi, H.N. Alshareef, H.C. Wen, R.Harris, H.Luan, Y. Senzaki, P. Lysaght, P. Majhi and B. H. Lee, "Effective Work Function Modulation of atomic-layer-deposition-TaN film by capping layer" Appl. Phys. Lett., 89, 032113, 2006.07.21. https://doi.org/10.1063/1.2234288.
58

H.C. Wen, R. Choi, G.A.Brown, T.Boscke, K.Matthews, H.R.Harris, K.Choi, H.N.Alshareef, H.Luan, G.Bersuker, P.Majhi, D.L.Kwong, and B. H. Lee, "Comparison of effective work function extraction methods using capacitance and current measurement techniques" IEEE Elec. Dev. Lett., 27(7), 598, 2006.06.26. 10.1109/LED.2006.876324.
57

B.H. Lee, J.W. Oh, H.H. Tseng, R. Jammy and H. Huff, "Gate Stack Technology for Nano Scale Devices: Current and Future Challenges" Materials Today, 9(6), 32, 2006.05.31. https://doi.org/10.1016/S1369-7021(06)71541-3.
56

C.D. Young, D. Heh, S. Nadkarni, R. Choi, J.J. Peterson, J. Barnett, B. H. Lee, and G. Bersuker, "Electron Trap Generation in High-k Gate Stacks by Constant Voltage Stress" IEEE Trans. Dev. Mat. Reliability, 6(2), 123-131, 2006.08.14. 10.1109/TDMR.2006.877865.
55

S. C. Song, Z. Zhang, C. Huffman, J. H. Sim, S. H. Bae, P. Kirsch, P. Majhi, N. Moumen, and B. H. Lee, "Highly Manufacturable Advanced Gate Stack Technology for Sub 45nm Self-Aligned Gate-First CMOSFETs" IEEE Trans. on Elec. Dev., 53(5), 979-989, 2006.04.24. 10.1109/TED.2006.872700.
54

S.A. Krishnan, M.Quevedo, R. Harris, P. D. Kirsch, R. Choi, B. H. Lee, G. Bersuker and J.C. Lee, "Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks" Jpn. J. Appl. Phys., 45(4S), 2945-2948, 2006.04.25. 10.1143/JJAP.45.2945.
53

C.Y. Kang, R. Choi , S.C. Song , C.D. Young, G. Bersuker, B. H. Lee, and J.C. Lee, "Transient Bi-Carrier Response in High-k Dielectrics and its Impact on Transient Charge Effects in High-k CMOS Device" Appl. Phys. Lett., 88(16), 162905, 2006.04.20. https://doi.org/10.1063/1.2195901.
52

H. Luan, H. N. Alshareef, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi and B. H. Lee, "Evaluation of titanium silicon nitride as gate electrodes for complimentary metal-oxide semicondiuctor" Appl. Phys. Lett., 88(14), 142113, 2006.04.07. https://doi.org/10.1063/1.2188380.
51

H.N. Alshareef, H. F. Luan, K. Choi, H.C. Wen, H.R. Harris, Y. Senzaki, P. Majhi and B. H. Lee, "Metal gate Work Function Engineering Using AlNx Interfacial Layers" Appl. Phys. Lett., 88(11), 111124, 2006.03.16. https://doi.org/10.1063/1.2186517.
50

S.H.Bae, S.C.Song, K.Choi, G.Bersuker, G.A.Brown, D.L.Kwong, and B. H. Lee, "Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectric" Microelectronic Engineering, 83(3), 460-462, 2006.03. https://doi.org/10.1016/j.mee.2005.11.010.
49

Z. Zhang, S.C. Song, M. Quevedo-Lopez, K. Choi, P. Kirsch, P. Lysaght, and B. H. Lee, "Co-Optimization of Metal Gate/High-k Stack to Achieve High-Field Mobility > 90% of SiO2 Universal with EOT = ~1 nm" IEEE Elec. Dev. Lett., 27(3), 185, 2006.02.27. 10.1109/LED.2006.870245.

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