Journals 11 페이지 | 포항공대 EESL

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Total 331건 11 페이지

2005
31

Z. Zhang, S.C. Song, C.Huffman, M. M. Hussain, J. Barnett, N.Moumen, H.N. Alshareef, P.Majhi, J.H. Sim, S.H. Bae, and B. H. Lee, "Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process" Electrochemical and Solid-State Letters, 8 (10), G271, 2005.08.12. https://doi.org/10.1149/1.2030447.
30

S.C.Song, B. H. Lee, Z.Zhang, S.H.Bae, K.Choi, P.Zeitzoff, "“Impact of Deposition Method of Metal Gate on Characteristics of Gate-First MOSFET with Hf-Silicate" Electrochemical and Solid-State Letters, 8 (10), G261, 2005.08.04. https://doi.org/10.1149/1.2007407.
29

C.D. Young, P. Zeitzoff, G.A. Brown, G.Bersuker, B. H. Lee, and J.R. Hauser, "Intrinsic mobility evaluation of high-k gate dielectric transistors using pulse Id-Vg" IEEE ELECTRON DEVICE LETTERS, 26 (8), 586, 2005.07.18. https://doi.org/10.1109/LED.2005.852746.
28

H.N. Alshareef, H.C. Wen, K. Choi, R. Harris, H. Luan, P. Lysaght, P. Majhi, M. El-Bouanani, V. Ukride, and B. H. Lee, "Modulation of the work function of silicon gate electrode using thin TaN interlayers" APPLIED PHYSICS LETTERS, 87, 052109, 2005.07.27. https://doi.org/10.1063/1.2006977.
27

G. Bersuker, P. Zeitzoff, J. Sim, B. H. Lee, R. Choi, G. Brown, C. Young, "“Mobility evaluation in transistors with charge-trapping gate dielectrics" APPLIED PHYSICS LETTERS, 87, 042905, 2005.07.22. https://doi.org/10.1063/1.1995956.
26

J.H.Sim, S.C.Song, P.D.Kirsch, C.D.Young, R.Choi, D.L.kwong, B. H. Lee and G.Bersuker, "Effect of ALD HfO2 thickness on charge trapping and mobility" Microelectronic Engineering, 80, 218-221, 2005.06.17. https://doi.org/10.1016/j.mee.2005.04.071.
25

B.H. Lee, R. Choi, J. Sim, S. Krishnan, J. Peterson, G.A. Brown and G.Bersuker, "Validity of Constant Voltage Stress Based Reliability Assessment of High-k Devices" IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5 (1), 20, 2005.06.13(invited). https://doi.org/10.1109/TDMR.2005.845807.
24

S.C. Song, Z. Zhang, and B. H. Lee, "Effects of Boron Diffusion in pMOSFETs With TiN-HfSiO Gate Stack" IEEE ELECTRON DEVICE LETTERS, 26 (6), 366, 2005.05.23. https://doi.org/10.1109/LED.2005.848071.
23

J.H. Sim, B. H. Lee R. Choi, S.-C.Song, and G. Bersuker, "Hot Carrier Degradation of HfSiON Gate Dielectrics with TiN Electrode" IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 5 (2), 177, 2005.06.27. https://doi.org/10.1109/TDMR.2005.851211.
22

C.Y. Kang, P. Lysaght, R. Choi, B. H. Lee, S.J. Rhee, C. H.Choi, M. S. Akbar, and J.C. Lee, "Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors" APPLIED PHYSICS LETTERS, 86, 222906, 2005.05.26. https://doi.org/10.1063/1.1942633.
21

C. D. Young, G. Bersuker, Y. Zhao, J. J. Peterson, J. Barnett, G. A. Brown, J. H. Sim, R. Choi, B. H. Lee and P. M. Zeitzoff, "Probing stress effects in HfO2 gate stacks with time dependent measurements" Microelectronics and Reliability, 45, 806-810, 2004.12.23. https://doi.org/10.1016/j.microrel.2004.11.043.
20

C.D. Young, Y. Zhao, M. Pendley, B. H. Lee, K. Matthews, J.H. Sim, R. Choi, G.A. Brown, R.W. Murto and G. Bersuker, "Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices" Japanese Journal of Applied Physics, 44 (4B), 2437-2440, 2005.04.21. http://iopscience.iop.org/1347-4065/44/4S/2437.
19

B.H. Lee, C. Young, R. Choi, J.H. Sim, G. Bersuker and G. Brown, "Transient Charging and Relaxation in High-k Gate Dielectric and Their Implications" Japanese Journal of Applied Physics, 44 (4B), 2415-2419, 2005.04.21. https://doi.org/10.1143/JJAP.44.2415.
18

J.H. Sim, R. Choi, B. H. Lee, C. Young and G. Bersuker, "Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode" Japanese Journal of Applied Physics, 44 (4B), 2420-2423, 2005.04.21. http://iopscience.iop.org/1347-4065/44/4S/2420.
17

R. Choi, B. H. Lee, C.D. Young, J.H. Sim, and G. Bersuker, "Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric" Japanese Journal of Applied Physics, 44 (4B), 2201-2204, 2005.04.21. https://doi.org/10.1143/JJAP.44.2201.
16

J. Barnett, C.D. Young, N,Moumen, G.Bersuker, J.J.Peterson, G.A. Brown, B.H.Lee, H.R.Huff, "Enhanced surface preparation technique for the Si/high-k interface" Solid state pheonomena, 103-104, 11-14, 2005.04.01. https://doi.org/10.4028/www.scientific.net/SSP.103-104.11.
15

R. Choi, S.J. Rhee, B. H. Lee, J. C. Lee, and G. Bersuker, "Charge Trapping and Detrapping Characteristics in Hafnium Silicate Gate Stack Under Static and Dynamic Stress" IEEE ELECTRON DEVICE LETTERS, 26 (3), 197, 2005.02.28. https://doi.org/10.1109/LED.2004.842639.
14

M.S. Akbar, N. Moumen, J. Barnett, B. H. Lee e and J.C. Lee, "Mobility Improvement After HCl Post-Deposition Cleaning of High-k dielectric, A Potential Issue in Wet Etching of Dual Metal Gate Process Technology" IEEE ELECTRON DEVICE LETTERS, 26 (3), 163, 2005.02.28. https://doi.org/10.1109/LED.2005.843210.
2004
13

G. Bersuker, J. Barnett, N. Moumen, S. Stemmer, M. Agustin, B. Foran, C. D. Young, P. Lysaght, B. H. Lee, Peter M. Zeitzoff, and H. R. Huff, "Interfacial Layer-Induced Mobility Degradation in High-k Transistors" Japanese Journal of Applied Physics, 43 (11S), 7899, 2004.11.15. https://doi.org/10.1143/JJAP.43.7899.
12

G.Bersuker, J.H.Sim, C.D.Young, R.Choi, P.M.Zeitzoff, G.A.Brown, B. H. Lee, R.W.Murto, "Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics" Microelectronics reliability, 44, 1509-1512, 2004.09.17. https://doi.org/10.1016/j.microrel.2004.07.048.
11

J.J. Peterson, C. D. Young, J. Barnett, S. Gopalan, J. Gutt, C.H. Lee, H.J. Li, T.HH. Hou, Y . Kim, C. Lim, N. Chaudhary, N. Moumen, B. H. Lee, G. Bersuker, G. Brown, P. Zeitzoff, M. Gardner, R. Murto, and H.Huff, "Subnanometer Scaling of HfO2/Metal Electrode Gate Stacks" Electrochemical and Solid-State Letters, 7, G164, 2004.06.14. https://doi.org/10.1149/1.1760712.
10

S. Zafar, B. H. Lee, and J. Stathis, "Evaluation of NBTI in HfO2 Gate Dielectric Stacks With Tungsten Gates" IEEE ELECTRON DEVICE LETTERS, 25 (3), 153, 2004.03.03. https://doi.org/10.1109/LED.2004.824244.
2003
9

K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zhu, "Strained Si CMOS (SS CMOS) technology: opportunities and challenges" Solid-State Electronics, 47 (7), 1133, 2003.07. https://doi.org/10.1016/S0038-1101(03)00041-8.
2002
8

Y.J. Cho, N.V.Nguyen, C.A.Richter, J.R.Ehrstein, B. H. Lee, and Jack C.Lee, "Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties" Applied Physics Letters, 80, 1249, 2002.02.14. https://doi.org/10.1063/1.1448384.
2000
7

W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, and J.C. Lee, "Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application" Applied Physics Letters, 77, 3269, 2000.11.13. https://doi.org/10.1063/1.1326482.
6

W. Qi, R. Nieh, E. Dhamarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee, "Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application" Applied Physics Letters, 77 (11), 1704, 2000.09.05. https://doi.org/10.1063/1.1308535.
5

L. Kang, B. H. Lee, W. Qi, R. Nieh, Y. Jeon, K. Onishi, S. Gopalan and J. C. Lee, "Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric" IEEE Electron Device Letters, 21 (4), 181, 2000.04. https://doi.org/10.1109/55.830975.
4

B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C.Lee, "Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing" Applied Physics Letters, 76, 1926, 2000.03.27 (First journal paper on thin HfO2 gate dielectric, cited more than 750 times). https://doi.org/10.1063/1.126214.
1999
3

B. H. Lee, Y. Jeon, K. Zawadzki, W. Qi and J. C. Lee, "Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon" Applied Physics Letters, 74, 3143, 1999.05.24. https://doi.org/10.1063/1.124089.
1997
2

G. Cha, B. H. Lee, K. W. Lee, G. J. Bae, W. D. Kim, J. H. Lee, I. K. Kim, K. C. Park, S. I. Lee and Y. B. Koh, "Design Considerations for Patterned Wafer Bonding" Japanese Journal of Applied Physics, 36, 1912, 1997.05.

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