Journals 6 페이지 | 포항공대 EESL

CONTACT US

Research
PEOPLE
- Professor
- Member
- Visitor
- Alumni
Publication
BOARD
- Lab board
- News
- Gallery

Total 336건 6 페이지

2014
186

S.S.Park, M.Siddik, J.Noh, D.S.Lee, J.Y.Woo, K.Moon, B.H.Lee, H.Hwang*, "Nitrogen-treated Memristive Device for Tunable Electronic Synapse" Semiconductor Science and Technology, 29, p.104006, 2014.09.18. https://doi.org/10.1088/0268-1242/29/10/104006.
185

Y.S.Park, S.M.Kim, H.S.Jeong, C.G.Kang, J.S.Park, H.Song, R.Lee, N.S.Myoung, B.H.Lee, S.Seo, J.T.Kim, G.Y.Jung, "Palladium-decorated Hydrogen Gas Sensors Using Periodically Aligned Graphene Nanoribbons" ACS Applied Materials and Interfaces, 6(15), p.13293, 2014.07.22. https://doi.org/10.1021/am503105s.
184

Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, "Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization" Jpn. J. of Appl. Phys., 53, 08LC02, 2014.07.09. https://doi.org/10.7567/JJAP.53.08LC02.
183

M.H.Kwon, S .K.Kwon, W.I.Choi, C.Y.Kang, B.H.Lee, P.Kirsch, H.D.Lee *, "A Correlation Between Oxygen Vacancies and Reliability Characterisitcs in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor" IEEE Trans. Elect. Dev., 61(8), p.2619, 2014.07.14. https://doi.org/10.1109/TED.2014.2326423.
182

U.Jung, Y.G.Lee, C.G.Kang, S.C.Lee, J.J.Kim, H.J.Hwang, S.K.Lim, M.H.Ham, B.H.Lee*, "Quantitatively estimating defects in graphene devices using discharge current analysis method" Scientific Reports, 4, 4886, 2014.05.08. https://doi.org/10.1038/srep04886.
181

U. Jung, Y.G. Lee, C.G. Kang, S.C Lee, B.H. Lee*, "Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method" Appl. Phys. Lett., 104, 151604, 2014.04.17. https://doi.org/10.1063/1.4871866.
180

S.G. Park, S.C. Lee, S. Jandhyala, M.W. Ha, J.S. Lee, L. Colombo, R. Wallace, B.H. Lee, J. Kim, "Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors" IEEE Elect. Dev. Lett., 35, p. 277- 279, 2014.01.09. https://doi.org/10.1109/LED.2013.2294828.
179

C.G. Kang, S.K.Lee, T.J. Yoo, W. Park, U. Jung, J. Ahn, B.H. Lee*, "Highly Sensitive Wide Bandwidth Photodetectors using Chemical Vapor Deposited Graphene" Appl. Phys. Lett., 104, 161902, 2014.04.21. https://doi.org/10.1063/1.4872267.
178

J.W. Kang, Y.S. Choi, B.H. Kim, C.G.Kang, B.H. Lee, C. W. Tu and S.J. Park, "Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode" Appl. Phys. Lett., 104, 051120, 2014.02.06. https://doi.org/10.1063/1.4864282.
177

S.C.Lee, O.D. Iyore, S.E. Park, Y.G. Lee, S. Jandgyala, C.G. Kang, Y.H. Kim, M. Q.Lopez, B.E. Gnade, R.M. Wallace, B.H.Lee*, J.Kim, "Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate" Carbon, 68, p.791-797, 2013.12.04. https://doi.org/10.1016/j.carbon.2013.11.071.
2013
176

M.H. Choe, B.H.Lee, W.J. Park, J.W.Kang, S.H. Jeong , K.J. Cho , W.-K. Hong , B.H.Lee, K.H.Lee. S.J.Park. T.H.Lee, "Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors" Appl. Phys. Lett., 103, 223305, 2013.11.26. http://dx.doi.org/10.1063/1.4833544.
175

J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee*, "Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys" IEEE Trans. Electron Device, 60(11), p.3683, 2013.09.30. https://doi.org/10.1109/TED.2013.2281857.
174

J.Noh, M.Jo, C.Y.Kang, D. Gilmer, P.Kirsch, R.Jammy, J.C.Lee, B.H.Lee*, "Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOx-Based ReRAMs" IEEE Elect. Dev. Lett., 34(9), p.1133, 2013.07.17. https://doi.org/10.1109/LED.2013.2271831.
173

M. Son, J.G. Son,K.-J. Moon, B.H. Lee, J.-M. Myoung, M. S. Strano, M.-H. Ham*, and C.A. Ross, "Sub-10-nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography" Advanced Materials, 25, pp.4723-4728, 2013.06.25. https://doi.org/10.1002/adma.201300813.
172

S.S.Park, J.Noh, M.Choo, A.M.Sheri, M.Chang, Y.B.Kim, C.J.Kim, M.Jeon, B.G.Lee, B.H.Lee, H.Hwang, "Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device" Nanotechnology, 24, 384009, 2013.09.02 (invited). http://dx.doi.org/10.1088/0957-4484/24/38/384009.
171

Y.G.Lee, C.G.Kang, C.Cho, Y.H.Kim, H.J.Hwang, B.H.Lee*, "Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using short pulse I-V method" Carbon, 60, p.453-460, 2013.08. http://dx.doi.org/10.1016/j.carbon.2013.04.060.
170

C.G.Kang, S.K.Lee, S.H.Choe, Y.G.Lee, C.L.Lee, B.H.Lee*, "Intrinsic photocurrent characteristics of graphene photodetector passivated with Al2O3" Optics Express, 21(20), p.23391, 2013.09.25. https://doi.org/10.1364/OE.21.023391.
169

H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, "Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack" Microelectronics Engineering, 109, p.87-89, 2013.09. https://doi.org/10.1016/j.mee.2013.02.094.
168

C.Cho, Y.G.Lee, U.Jung, C.G.Kang, S.K.Lim, H.J.Hwang, H.J.Choi, B.H.Lee*, "Correlation between the hysteresis and the initial defect density of graphene" Appl. Phys. Lett., 103, p.083110, 2013.08.20. https://doi.org/10.1063/1.4818770.
167

S.H. Kim, J.B. Park , J.Y. Woo , C. Cho , W.T. Lee , J.H. Shin , G. Choi , S.S. Park , D.S. Lee , B.H. Lee , H. Hwang, "Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories" Microelectronics Engineering, 107, p.33-36, 2013.07. http://dx.doi.org/10.1016/j.mee.2013.02.084.
166

W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*, "Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack" Nanotechnology, 24, 475501, 2013.09.31. http://dx.doi.org/10.1088/0957-4484/24/47/475501.
165

H.J. Hwang, J.H.Yang, Y.G.Lee, C.Cho, C.G.Kang, S.C.Kang, W.Park, and B.H.Lee*, "Ferroelectric Polymer Gated Graphene Memory with Very High Speed Conductivity Modulation" Nanotechnology, 24, 2013.04.04 Also selected as a paper of particular interest.. http://dx.doi.org/10.1088/0957-4484/24/17/175202.
164

Y.G.Lee, Y.J.Kim, C.G.Kang, C.Cho, H.J.Hwang, U.J. Jung, B.H.Lee*, "Influences of extrinsic factors on the accuracy of mobility extraction for graphene MOSFETs" Appl. Phys. Lett., 102(9), 093121, 2013.03.08. https://doi.org/10.1063/1.4795295.
163

C.G.Kang, S.K.Lim, S.C.Lee, S.K.Lee,C.Cho, Y.G.Lee, H.J.Hwang, Y.H. Kim, H.J.Choi, S.H.Choe, M.H.Ham and B.H.Lee*, "Effects of Multi-Layer Graphene Capping on Cu interconnects" Nanotechnology, 24, 115707, 2013.03.01 Also selected as article of particular interest.. http://dx.doi.org/10.1088/0957-4484/24/11/115707.
162

J.W.Yoon, W.Park, G.Y.Bae, Y.H.Kim, H.S.Jang, Y.J. Hyung, S.K.Lim, Y.H.Kahng, W.K.Hong, B.H.Lee, H.C.Ko, "Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes" Small, 9(19), p.3295, 2013.02.18. https://doi.org/10.1002/smll.201300134.
161

K.S. Min, C. Park,C.Y. Kang, C.S. Park, B.J. Park, Y.W. Kim, B.H. Lee, Jack C. Lee, G. Bersuker, P. Kirsch, R. Jammy, G.Y. Yeom, "Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate" Solid State Electronics, 86, p.75-78, 2013.08. https://doi.org/10.1016/j.sse.2012.07.023.
160

C.G.Kang, Y.G.Lee, S.K.Lee, E.J,Park, C.Cho, S.K.Lim, H.J.Hwang,H.J.Chung, S.Seo, B.H.Lee*, "Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors" Carbon, 53, p.182-187, 2013.53. https://doi.org/10.1016/j.carbon.2012.10.046.
2012
159

S.K. Lee, C.G. Kang, Y.G. Lee, C. Cho, E.J. Park, H.J. Chung, S. Seo, H.D. Lee, B.H. Lee, "Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices" Carbon, 50 (11), 4046-4051, 2012.09. http://doi.org/10.1016/j.carbon.2012.04.051.
158

S. Park, S. Jung, M. Siddik, M. Jo, J. Park, S. Kim, W. Lee, J. Shin, D. Lee, G. Choi, J. Woo, E. Cha, B.H. Lee, H. Hwang, "Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications" physica status solidi (RRL) - Rapid Research Letters, 6 (11), 454-456, 2012.11. http://doi.org/10.1002/pssr.201206382.
157

M. Choe, W. Park, J.W. Kang, S.H. Jeong, W.K. Hong, B.H. Lee, S.J. Park, T. Lee, "Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors" Nanotechnology, 23 (48), 485201, 2012.12.07. http://doi.org/10.1088/0957-4484/23/48/485201.

검색