Journals 6 페이지 | 포항공대 EESL

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Total 348건 6 페이지

2015
198

C.Cho, S.K.Lee, J.Noh, W.Park S.C.Lee, Y.G.Lee, H.J.Hwang, M.Ham, B.H.Lee, "Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern" Applied Physics Letters, 106 (21), 213107, 2015.05.25. https://doi.org/10.1063/1.4921797.
197

S.C.Lee, S.K.Lee, C.G.Kang, C.Cho, Y.G.Lee, U.J.Jung, and B.H.Lee, "Graphene transfer in vacuum yielding a high quality graphene" Carbon, 93, 286-294, 2015.05.21. https://doi.org/10.1016/j.carbon.2015.05.038.
196

S.Park, M.Chu, J.I.Kim, J.Noh, M.Jeon, B.H.Lee, B.Lee, H.Hwang and B.G.Lee, "Electronic system with memristive synapses for pattern recognition" Scientific Reports, 5 (1), 10123, 2015.05.05. https://doi.org/10.1038/srep10123.
195

J.H.Yang,H.J. Hwang, S.C. Kang, and B.H. Lee, "Sensitivity improvement of graphene/Al2O3/PVDF–TrFE stacked touch device through Al seed assisted dielectric scaling" Microelectronic Engineering, 147, 79-84, 2015.04.13. https://doi.org/10.1016/j.mee.2015.04.039.
194

C.K.Park, H.J.Kim, K.Y.Ko, K.K.Kim, B.H.Lee, J.H.Ahn, "The variation of the enhanced PL efficiency of Y 2 O 3 :Eu 3+ phosphor films with the height to the ZrO 2 nanoparticle-assisted 2D PCL by reverse nano-imprint lithography" Microelectronic Engineering, 136, 48-50, 2015.03.25. https://doi.org/10.1016/j.mee.2015.03.035.
193

Y.H. Kim, Y.G. Lee, U. Jung, J.J. Kim, M.H. Choe, K.T. Lee, S.W. Pae, J.W. Park, B.H.Lee, "Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry" IEEE Transactions on Electron Devices, 62 (4), 1092-1097, 2015.03.20. https://doi.org/10.1109/TED.2015.2404920.
192

Y.J.Kim, Y.G.Lee, U.Jung, S.Lee, S.K.Lee, and B.H.Lee, "A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors" Nanoscale, 7 (9), 4013-4019, 2015.02.12. https://doi.org/10.1039/C4NR06397J.
191

U.Jung, Y.J.Kim, Y.H.Kim, Y.G.Lee, and B.H.Lee, "Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors" IEEE Electron Device Letters, 36 (4), 408-410, 2015.02.10. https://doi.org/10.1109/LED.2015.2402287.
190

B.J.Cho, M.G.Hahm, M.S.Choi, J.W.Yoon, A.R.Kim, Y.J.Lee, S.G.Park, J..D.Kwon, C.S.Kim, M.K.Song, Y.S.Jeong, K.S.Nam, S.C.Lee, T.J.Yoo, C.G.Kang, B.H.Lee, H.C.Ko, P.M.Ajayan, D.H.Kim, "Charge-transfer-based Gas Sensing Using Atomic-layer MoS<sub>2</sub>" Scientific Reports, 5 (1), 8052, 2015.01.27. https://doi.org/10.1038/srep08052.
189

B.J.Cho, Cho, A.R. Kim, Y.J. Park, J.W. Yoon, Y.J. Lee, S.C. Lee, T.J. Yoo, C.G. Kang, B.H. Lee, H.C. Ko, D.H. Kim, M.G. Hah, "Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS <sub>2</sub>" ACS Applied Materials & Interfaces, 7 (4), 2952-2959, 2015.02.04. https://doi.org/10.1021/am508535x.
2014
188

M.Chu, B.H.Kim, S.S.Park, H.Hwang, M,Jeon, B.H.Lee, B.G.Lee, "Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron" IEEE Transactions on Industrial Electronics, 62 (4), 2410-2419, 2014.09.09. https://doi.org/10.1109/TIE.2014.2356439.
187

K.Yu, J.M.Lee,J.Kim, G.Kim, H.Kang, B.Park, H.Y.Kahng, S. Kwon, S.C.Lee, B.H.Lee, J. Kim, H.I.Park, S.O. Kim, K.Lee, "Semiconducting Polymers with Nanocrystallites Interconnected via Boron-Doped Carbon Nanotubes" Nano Letters, 14(12), p.7100-7106, 2014.11.05. https://doi.org/10.1021/nl503574h.
186

S.S.Park, M.Siddik, J.Noh, D.S.Lee, J.Y.Woo, K.Moon, B.H.Lee, H.Hwang*, "Nitrogen-treated Memristive Device for Tunable Electronic Synapse" Semiconductor Science and Technology, 29, p.104006, 2014.09.18. https://doi.org/10.1088/0268-1242/29/10/104006.
185

Y.S.Park, S.M.Kim, H.S.Jeong, C.G.Kang, J.S.Park, H.Song, R.Lee, N.S.Myoung, B.H.Lee, S.Seo, J.T.Kim, G.Y.Jung, "Palladium-decorated Hydrogen Gas Sensors Using Periodically Aligned Graphene Nanoribbons" ACS Applied Materials and Interfaces, 6(15), p.13293, 2014.07.22. https://doi.org/10.1021/am503105s.
184

Y.H.Kim, S.H.Baek, C.H.Jeon, Y.G.Lee, J.J.Kim, U.J.Jung, S.C.Kang, W.Park, S.H.Lee, B.H.Lee*, "Leakage current limit of time domain reflectometry in ultra-thin dielectric characterization" Jpn. J. of Appl. Phys., 53, 08LC02, 2014.07.09. https://doi.org/10.7567/JJAP.53.08LC02.
183

M.H.Kwon, S .K.Kwon, W.I.Choi, C.Y.Kang, B.H.Lee, P.Kirsch, H.D.Lee *, "A Correlation Between Oxygen Vacancies and Reliability Characterisitcs in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor" IEEE Trans. Elect. Dev., 61(8), p.2619, 2014.07.14. https://doi.org/10.1109/TED.2014.2326423.
182

U.Jung, Y.G.Lee, C.G.Kang, S.C.Lee, J.J.Kim, H.J.Hwang, S.K.Lim, M.H.Ham, B.H.Lee*, "Quantitatively estimating defects in graphene devices using discharge current analysis method" Scientific Reports, 4, 4886, 2014.05.08. https://doi.org/10.1038/srep04886.
181

U. Jung, Y.G. Lee, C.G. Kang, S.C Lee, B.H. Lee*, "Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method" Appl. Phys. Lett., 104, 151604, 2014.04.17. https://doi.org/10.1063/1.4871866.
180

S.G. Park, S.C. Lee, S. Jandhyala, M.W. Ha, J.S. Lee, L. Colombo, R. Wallace, B.H. Lee, J. Kim, "Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors" IEEE Elect. Dev. Lett., 35, p. 277- 279, 2014.01.09. https://doi.org/10.1109/LED.2013.2294828.
179

C.G. Kang, S.K.Lee, T.J. Yoo, W. Park, U. Jung, J. Ahn, B.H. Lee*, "Highly Sensitive Wide Bandwidth Photodetectors using Chemical Vapor Deposited Graphene" Appl. Phys. Lett., 104, 161902, 2014.04.21. https://doi.org/10.1063/1.4872267.
178

J.W. Kang, Y.S. Choi, B.H. Kim, C.G.Kang, B.H. Lee, C. W. Tu and S.J. Park, "Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode" Appl. Phys. Lett., 104, 051120, 2014.02.06. https://doi.org/10.1063/1.4864282.
177

S.C.Lee, O.D. Iyore, S.E. Park, Y.G. Lee, S. Jandgyala, C.G. Kang, Y.H. Kim, M. Q.Lopez, B.E. Gnade, R.M. Wallace, B.H.Lee*, J.Kim, "Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate" Carbon, 68, p.791-797, 2013.12.04. https://doi.org/10.1016/j.carbon.2013.11.071.
2013
176

M.H. Choe, B.H.Lee, W.J. Park, J.W.Kang, S.H. Jeong , K.J. Cho , W.-K. Hong , B.H.Lee, K.H.Lee. S.J.Park. T.H.Lee, "Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors" Appl. Phys. Lett., 103, 223305, 2013.11.26. http://dx.doi.org/10.1063/1.4833544.
175

J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee*, "Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys" IEEE Trans. Electron Device, 60(11), p.3683, 2013.09.30. https://doi.org/10.1109/TED.2013.2281857.
174

J.Noh, M.Jo, C.Y.Kang, D. Gilmer, P.Kirsch, R.Jammy, J.C.Lee, B.H.Lee*, "Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOx-Based ReRAMs" IEEE Elect. Dev. Lett., 34(9), p.1133, 2013.07.17. https://doi.org/10.1109/LED.2013.2271831.
173

M. Son, J.G. Son,K.-J. Moon, B.H. Lee, J.-M. Myoung, M. S. Strano, M.-H. Ham*, and C.A. Ross, "Sub-10-nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography" Advanced Materials, 25, pp.4723-4728, 2013.06.25. https://doi.org/10.1002/adma.201300813.
172

S.S.Park, J.Noh, M.Choo, A.M.Sheri, M.Chang, Y.B.Kim, C.J.Kim, M.Jeon, B.G.Lee, B.H.Lee, H.Hwang, "Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device" Nanotechnology, 24, 384009, 2013.09.02 (invited). http://dx.doi.org/10.1088/0957-4484/24/38/384009.
171

Y.G.Lee, C.G.Kang, C.Cho, Y.H.Kim, H.J.Hwang, B.H.Lee*, "Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using short pulse I-V method" Carbon, 60, p.453-460, 2013.08. http://dx.doi.org/10.1016/j.carbon.2013.04.060.
170

C.G.Kang, S.K.Lee, S.H.Choe, Y.G.Lee, C.L.Lee, B.H.Lee*, "Intrinsic photocurrent characteristics of graphene photodetector passivated with Al2O3" Optics Express, 21(20), p.23391, 2013.09.25. https://doi.org/10.1364/OE.21.023391.
169

H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*, "Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack" Microelectronics Engineering, 109, p.87-89, 2013.09. https://doi.org/10.1016/j.mee.2013.02.094.

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