Journals 7 페이지 | 포항공대 EESL

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Total 338건 7 페이지

2012
158

S. Park, S. Jung, M. Siddik, M. Jo, J. Park, S. Kim, W. Lee, J. Shin, D. Lee, G. Choi, J. Woo, E. Cha, B.H. Lee, H. Hwang, "Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications" physica status solidi (RRL) - Rapid Research Letters, 6 (11), 454-456, 2012.11. http://doi.org/10.1002/pssr.201206382.
157

M. Choe, W. Park, J.W. Kang, S.H. Jeong, W.K. Hong, B.H. Lee, S.J. Park, T. Lee, "Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors" Nanotechnology, 23 (48), 485201, 2012.12.07. http://doi.org/10.1088/0957-4484/23/48/485201.
156

U. Jung, Y.G. Lee, J.J. Kim, S.K. Lee, I. Mejia, A. Salas-Vwilasenor, M. Quevedo-Lopez, B.H. Lee, "Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors" Applied Physics Letters, 101 (18), 182106, 2012.10.29. http://doi.org/10.1063/1.4765067.
155

S. Park, J. Park, S. Kim, W. Lee, B.H. Lee, H. Hwang, "Programmable analogue circuits with multilevel memristive device" Electronics Letters, 48 (22), 1415, 2012.10.25. http://doi.org/10.1049/el.2012.3179.
154

W.T. Lee, J.B. Park, S.H. Kim, J. Woo, J. Shin, G. Choi, S.S. Park, D.S. Lee, E. Cha, B.H. Lee, H. Hwang, "High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector-One Resistor Arrays" ACS Nano, 6 (9), 8166-8172, 2012.09.25. http://doi.org/10.1021/nn3028776.
153

S.K. Lee, M.S.Jo, C.W. Sohn, C.Y. Kang, J.C. Lee, Y.H. Jeong, B.H. Lee, "New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High-k/IL Gate Dielectric" IEEE Electron Device Letters, 33 (11), 1517-1519, 2012.11. http://doi.org/10.1109/LED.2012.2211072.
152

S.C. Lee, J.-S. Yeo, Y.S. Ji, C. Cho, D.Y. Kim, S.I. Na, B.H. Lee, T. Lee,, "Flexible organic solar cells composed of P3HT:PCBM using chemically doped graphene electrodes" Nanotechnology, 23 (34), 344013, 2012.08.31. http://doi.org/10.1088/0957-4484/23/34/344013.
151

Y. Kim, Y.G. Lee, M. Kim, C.G. Kang, U. Jung, J.J. Kim, S.C. Song, J. Blatchford, B. Kirkpatrick, H. Niimi, K.Y. Lim, B.H. Lee, "Capacitance Analysis of Highly Leaky Al2O3 MIM Capacitors Using Time Domain Reflectometry" IEEE Electron Device Letters, 33 (9), 1303-1305, 2012.09. http://doi.org/10.1109/LED.2012.2205213.
150

M.H. Choe, C.-Y. Cho, J.-P. Shim, W.J. Park, S.K. Lim, W.-K. Hong, B.H. Lee, D.S. Lee, S.J. Park, T. Lee, "Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices" Applied Physics Letters, 101 (3), 031115, 2012.07.16. http://doi.org/10.1063/1.4737637.
149

S. Cimino, A. Padovani, L. Larcher, V.V. Afanas’ev, H.J. Hwang, Y.G. Lee, M. Jurczac, D. Wouters, B.H. Lee, H. Hwang, L. Pantisano, "A study of the leakage current in TiN/HfO2/TiN capacitors" Microelectronic Engineering, 95, 71-73, 2012.07. http://doi.org/10.1016/j.mee.2011.03.009.
148

J.J. Kim, M. Cho, L. Pantisano, Y.G. Lee, U. Jung, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, B.H. Lee, "Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs" IEEE Electron Device Letters, 33 (7), 937-939, 2012.05.16. http://doi.org/10.1109/LED.2012.2193868.
147

S.C. Lee, G. Jo, S.J. Jang, W. Park, Y.H. Kahng, D.Y. Kim, B.H. Lee, T.H. Lee, "Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes" Japanese Journal of Applied Physics, 51 (2), 02BK09, 2012.02.20. http://doi.org/10.1143/JJAP.51.02BK09.
146

B.H. Lee, Y.G. Lee, U.J. Jung, Y.H. Kim, H.J. Hwang, J.J. Kim, C.G. Kang, "Issues with the electrical characterization of graphene devices" Carbon letters, 13 (1), 23-28, 2012.01.31 (invited). http://doi.org/10.5714/CL.2012.13.1.023.
2011
145

K.T.Lee, C.Y.Kang, H.S.Choi, S.H.Hong, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S.Park, H.C. Sagong, B.H.Lee, G.Bersuker, H.H.Tseng, R.Jammy, Y.H.Jeong, "A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs" Microelectronics Engineering, 88, p.3411, 2011.12. https://doi.org/10.1016/j.mee.2009.08.002.
144

H.M. Kwon, W.H. Choi, I.S. Han, M.K. Na, S.U. Park, J.D. Bok, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, "Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs" Microelectronics Engioneering, 88, 3399-3403, 2011.12. https://doi.org/10.1016/j.mee.2010.04.002.
143

H.M. Kwon, W.H. Choi, I.S. Han, S.U. Park, B.S. Park, Y.Y. Zhang, C.Y. Kang, B.H.Lee, R. Jammy, H.D.Lee, "Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics" Microelectronics Engineering, 88, 3415-3418, 2011.12. https://doi.org/10.1016/j.mee.2010.06.007.
142

S.S. Park, J.H. Shin, S. Cimino, S.J. Jung, J.M. Lee, S.H. Kim, J.B. Park, W.T. Lee, M.W. Son, B.H. Lee, L. Pantisano and H. Hwang, "Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in an Inverter Circuit for FPGA Applications" IEEE Elect. Dev. Lett., 32(12), P.1665, 2011.10.20. https://doi.org/10.1109/LED.2011.2168376.
141

S.H. Kim, J.B. Park, S.J. Jung, W.T. Lee, J.Y.Woo, C.Cho, M. Siddik, J.H. Shin, B.H.Lee, H.Hwang, "Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations" Appl. Phys. Lett., 99(19), 192110, 2011.11.11. http://link.aip.org/link/doi/10.1063/1.3659692?ver=pdfcov.
140

S.U.Park, H.M,Kwon, I.S. Han, Y.J. Jung, H.Y.Kwak, W.I. Choi, M.L. Ha, J.I. Lee, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, "Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2" Jpn. J. of Appl. Phys., 50(10), Part 2, 2011.10.20. http://dx.doi.org/10.1143/JJAP.50.10PB06.
139

C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee*, "Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment" IEEE Elec. Dev. Lett., 32(11), p1591, 2011.11. https://doi.org/10.1109/LED.2011.2166240.
138

Y.H. Kim, G. Wang, M.H. Choe, J.W. Kim, S.C. Lee, S.J. Park, D.-Y. Kim, B.H. Lee, T. Lee, "Electronic properties associated with conformational changes in azobenzene-derivative molecular junctions" Organic Electronics, 12, p.2144, 2011.12. https://doi.org/10.1016/j.orgel.2011.08.017.
137

H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, C.G.Kang, H.Hwang, B.H.Lee*, "Electrical Characteristics of Wrinkle-Free Graphene Formed by Laser Graphitization of 4H-SiC" Appl. Phys. Lett., 99, 082111, 2011.08.26 Also, published in Virtual J. of Nanoscale Science and Technology, 24(11), Sep. 2011.. https://doi.org/10.1063/1.3629785.
136

S.C.Lee, S.J.Kang, G.H.Jo, M.H.Cho, W.J.Park, J.W.Woon, T.H.Kwon, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.Lee, "Enhanced charactteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments" Appl. Phys. Lett., 99, 083306, 2011.08.25. https://doi.org/10.1063/1.3629994.
135

C. G. Kang, J.W. Kang, S.K. Lee, S.Y. Lee, C.H. Cho, H.J. Hwang, Y.G. Lee, J. Heo, H.-J. Chung, H. Yang, S. Seo, S.-J. Park, K.Y. Ko, J. Ahn and B.H. Lee*, "Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask" Nanotechnology, 22, p.295201, 2011.06.14. http://dx.doi.org/10.1088/0957-4484/22/29/295201.
134

K.Seo, I.S.Kim, S.J. Jung, M.S.Jo, S.S.Park, J.B.Park, J.H. Shin, K.P. Biju, J.M.Kong, K.H.Lee, B.H. Lee, H. Hwang, "Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device" Nanotechnology, 22(25), p.254023, 2011.05.16. http://dx.doi.org/10.1088/0957-4484/22/25/254023.
133

Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Jeong, S. Seo, R. Choi, B.H. Lee, "Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics" Appl. Phys. Lett., 98, 183508, 2011.05.06. https://doi.org/10.1063/1.3588033.
132

H.M. Kwon, I.S. Han, S.U.Park, J.D.Bok, Y.J. Jung, H.S. Shin, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee, "Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2 Layer" Jpn. J. of Appl. Phys., 50(4), Part 2, 04DD02, 2011.04.20. DOI: 10.1143/JJAP.50.04DD02.
131

Y. H. Kahng, S.C. Lee, M. Choe, G. Jo, W.J. Park, J.W. Yoon, W.-K. Hong, C. Cho, B.H. Lee, and T. Lee, "A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks" Nanotechnology, 22, 045706, 2010.12.20. http://dx.doi.org/10.1088/0957-4484/22/4/045706.
130

B.H.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, and H.Hwang, "Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications" J. Nanoscience and Nanotechnology, 11, 1, p.256-261, 2011.01.01. https://doi.org/10.1166/jnn.2011.3154.
2010
129

W.H. Choi, C.-Y. Kang, J.-W. Oh, B.H. Lee, P. Majhi, H.M. Kwon, R. Jammy, G.W. Lee and H.D. Lee, "Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGe1-x pMOSFETs with High-k/Metal Gate Stacks" IEEE Electron Device Lett., 31(11), 1211-1213, 2010.10.07. 10.1109/LED.2010.2071851.

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