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Total 329건
7 페이지
게시판 검색
2012
149
S. Cimino, A. Padovani, L. Larcher, V.V. Afanas’ev, H.J. Hwang, Y.G. Lee, M. Jurczac, D. Wouters, B.H. Lee, H. Hwang, L. Pantisano,
"A study of the leakage current in TiN/HfO2/TiN capacitors"
Microelectronic Engineering
,
95,
71-73,
2012.07.
http://doi.org/10.1016/j.mee.2011.03.009.
148
J.J. Kim, M. Cho, L. Pantisano, Y.G. Lee, U. Jung, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, B.H. Lee,
"Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs"
IEEE Electron Device Letters
,
33 (7),
937-939,
2012.05.16.
http://doi.org/10.1109/LED.2012.2193868.
147
S.C. Lee, G. Jo, S.J. Jang, W. Park, Y.H. Kahng, D.Y. Kim, B.H. Lee, T.H. Lee,
"Characterization on Improved Effective Mobility of Pentacene Organic Field-Effect Transistors Using Graphene Electrodes"
Japanese Journal of Applied Physics
,
51 (2),
02BK09,
2012.02.20.
http://doi.org/10.1143/JJAP.51.02BK09.
146
B.H. Lee, Y.G. Lee, U.J. Jung, Y.H. Kim, H.J. Hwang, J.J. Kim, C.G. Kang,
"Issues with the electrical characterization of graphene devices"
Carbon letters
,
13 (1),
23-28,
2012.01.31 (invited).
http://doi.org/10.5714/CL.2012.13.1.023.
2011
145
K.T.Lee, C.Y.Kang, H.S.Choi, S.H.Hong, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S.Park, H.C. Sagong, B.H.Lee, G.Bersuker, H.H.Tseng, R.Jammy, Y.H.Jeong,
"A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs"
Microelectronics Engineering
,
88,
p.3411,
2011.12.
https://doi.org/10.1016/j.mee.2009.08.002.
144
H.M. Kwon, W.H. Choi, I.S. Han, M.K. Na, S.U. Park, J.D. Bok, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee,
"Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs"
Microelectronics Engioneering
,
88,
3399-3403,
2011.12.
https://doi.org/10.1016/j.mee.2010.04.002.
143
H.M. Kwon, W.H. Choi, I.S. Han, S.U. Park, B.S. Park, Y.Y. Zhang, C.Y. Kang, B.H.Lee, R. Jammy, H.D.Lee,
"Analysis of trap effect on reliability using the charge pumping technology in La-incorporated high-k dielectrics"
Microelectronics Engineering
,
88,
3415-3418,
2011.12.
https://doi.org/10.1016/j.mee.2010.06.007.
142
S.S. Park, J.H. Shin, S. Cimino, S.J. Jung, J.M. Lee, S.H. Kim, J.B. Park, W.T. Lee, M.W. Son, B.H. Lee, L. Pantisano and H. Hwang,
"Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in an Inverter Circuit for FPGA Applications"
IEEE Elect. Dev. Lett.
,
32(12),
P.1665,
2011.10.20.
https://doi.org/10.1109/LED.2011.2168376.
141
S.H. Kim, J.B. Park, S.J. Jung, W.T. Lee, J.Y.Woo, C.Cho, M. Siddik, J.H. Shin, B.H.Lee, H.Hwang,
"Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations"
Appl. Phys. Lett.
,
99(19),
192110,
2011.11.11.
http://link.aip.org/link/doi/10.1063/1.3659692?ver=pdfcov.
140
S.U.Park, H.M,Kwon, I.S. Han, Y.J. Jung, H.Y.Kwak, W.I. Choi, M.L. Ha, J.I. Lee, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee,
"Comparison of multilayer dielectric thin films for future metal-insulator-metal capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2"
Jpn. J. of Appl. Phys.
,
50(10),
Part 2,
2011.10.20.
http://dx.doi.org/10.1143/JJAP.50.10PB06.
139
C.G.Kang, S.K.Lee, Y.G.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, J.S.Heo, H.J.Chung, S.Seo, B.H.Lee*,
"Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment"
IEEE Elec. Dev. Lett.
,
32(11),
p1591,
2011.11.
https://doi.org/10.1109/LED.2011.2166240.
138
Y.H. Kim, G. Wang, M.H. Choe, J.W. Kim, S.C. Lee, S.J. Park, D.-Y. Kim, B.H. Lee, T. Lee,
"Electronic properties associated with conformational changes in azobenzene-derivative molecular junctions"
Organic Electronics
,
12,
p.2144,
2011.12.
https://doi.org/10.1016/j.orgel.2011.08.017.
137
H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, C.G.Kang, H.Hwang, B.H.Lee*,
"Electrical Characteristics of Wrinkle-Free Graphene Formed by Laser Graphitization of 4H-SiC"
Appl. Phys. Lett.
,
99,
082111,
2011.08.26 Also, published in Virtual J. of Nanoscale Science and Technology, 24(11), Sep. 2011..
https://doi.org/10.1063/1.3629785.
136
S.C.Lee, S.J.Kang, G.H.Jo, M.H.Cho, W.J.Park, J.W.Woon, T.H.Kwon, Y.H.Kahng, D.Y.Kim, B.H.Lee, T.Lee,
"Enhanced charactteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments"
Appl. Phys. Lett.
,
99,
083306,
2011.08.25.
https://doi.org/10.1063/1.3629994.
135
C. G. Kang, J.W. Kang, S.K. Lee, S.Y. Lee, C.H. Cho, H.J. Hwang, Y.G. Lee, J. Heo, H.-J. Chung, H. Yang, S. Seo, S.-J. Park, K.Y. Ko, J. Ahn and B.H. Lee*,
"Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask"
Nanotechnology
,
22,
p.295201,
2011.06.14.
http://dx.doi.org/10.1088/0957-4484/22/29/295201.
134
K.Seo, I.S.Kim, S.J. Jung, M.S.Jo, S.S.Park, J.B.Park, J.H. Shin, K.P. Biju, J.M.Kong, K.H.Lee, B.H. Lee, H. Hwang,
"Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device"
Nanotechnology
,
22(25),
p.254023,
2011.05.16.
http://dx.doi.org/10.1088/0957-4484/22/25/254023.
133
Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Jeong, S. Seo, R. Choi, B.H. Lee,
"Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics"
Appl. Phys. Lett.
,
98,
183508,
2011.05.06.
https://doi.org/10.1063/1.3588033.
132
H.M. Kwon, I.S. Han, S.U.Park, J.D.Bok, Y.J. Jung, H.S. Shin, C.Y. Kang, B.H. Lee, R. Jammy, H.D. Lee,
"Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2 Layer"
Jpn. J. of Appl. Phys.
,
50(4), Part 2,
04DD02,
2011.04.20.
DOI: 10.1143/JJAP.50.04DD02.
131
Y. H. Kahng, S.C. Lee, M. Choe, G. Jo, W.J. Park, J.W. Yoon, W.-K. Hong, C. Cho, B.H. Lee, and T. Lee,
"A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks"
Nanotechnology
,
22,
045706,
2010.12.20.
http://dx.doi.org/10.1088/0957-4484/22/4/045706.
130
B.H.Lee, H.J.Hwang, C.H.Cho, S.K.Lim, S.Y.Lee, and H.Hwang,
"Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications"
J. Nanoscience and Nanotechnology
,
11, 1,
p.256-261,
2011.01.01.
https://doi.org/10.1166/jnn.2011.3154.
2010
129
W.H. Choi, C.-Y. Kang, J.-W. Oh, B.H. Lee, P. Majhi, H.M. Kwon, R. Jammy, G.W. Lee and H.D. Lee,
"Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGe1-x pMOSFETs with High-k/Metal Gate Stacks"
IEEE Electron Device Lett.
,
31(11),
1211-1213,
2010.10.07.
10.1109/LED.2010.2071851.
128
H.B. Park, C.S.Park, C.Y. Kang, S.-C. Song, B.H. Lee, T.W. Kim, T.-Y. Jang, D.-H. Kim, J. K. Jeong, and Ri. Choi,
"Performance and reliability analysis of p-type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal"
J. Vac. Sci. Technol.
,
28(6),
1267,
2010.11.11.
https://doi.org/10.1116/1.3514103.
127
J.W. Lee, B.H. Lee, H.C. Shin, J.H. Lee,
"Comparison of Low Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-k nFETs"
IEEE Elect. Dev. Lett.
,
31(10),
1086-1088,
2010.08.12.
10.1109/LED.2010.2058839.
126
C.D. Young, D. Heh, R. Choi, B.H. Lee, G. Bersuker,
"The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics"
J. Semi. Tech. Sci.
,
10(2),
79-99,
2010.06.30.
https://doi.org/10.5573/JSTS.2010.10.2.079.
125
J.-W. Lee, B.H. Lee, H. Shin, and J.-H. Lee,
"Investigation of Random Telegraph Noise in Gate Induced Drain Leakage and Gate Edge Direct Tunneling Currents of High-k MOSFETs"
IEEE Trans. on Elect. Dev.
,
57(4),
913-918,
2010.02.25.
10.1109/TED.2010.2041871.
124
M.H. Choe, G.H. Jo, J.S. Maeng, W.-K. Hong, M.S. Jo, G.U. Wang, W.J. Park, B.H. Lee, H. Hwang, and T. Lee,
"Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness"
J. Appl. Phys
,
107(3),
034504,
2010.02.05.
https://doi.org/10.1063/1.3298910.
2009
123
H. Park, M. Chang, M. Jo, R. Choi, B.H. Lee, H. Hwang,
"Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition"
Jpn. J. Appl. Phys.
,
48 (11),
116506,
2009.11.20.
http://doi.org/10.1143/JJAP.48.116506.
122
H.B. Park, C.S. Park, C.Y. Kang, S.C. Song, B.H. Lee, T.Y. Jang, T.W. Kim, J.K. Jeong, R. Choi,
"Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric"
Applied Physics Letters
,
95 (19),
192113,
2009.11.09.
http://doi.org/10.1063/1.3264086.
121
R. Choi, T.W. Kim, H. Park, B.H. Lee,
"Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric"
Japanese Journal of Applied Physics
,
48 (9),
091404,
2009.09.24.
http://doi.org/10.1143/JJAP.48.091404.
120
C.Y. Kang, R. Choi, B.H. Lee, R. Jammy,
"Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs"
Journal of Semiconductor Technology and Science
,
9 (3),
166-173,
2009.12.
http://doi.org/10.5573/JSTS.2009.9.3.166.
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