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Total 329건
8 페이지
게시판 검색
2009
119
K.T. Lee, C.Y. Kang, M.S. Park, B.H. Lee, H.K. Park, H. Hwang, H.H. Tseng, R. Jammy, Y.H. Jeong,
"A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress"
IEEE Electron Device Letters
,
30 (7),
760-762,
2009.05.27.
http://doi.org/10.1109/LED.2009.2021007.
118
C.Y. Kang, P. Kirsch, B.H. Lee, H.H. Tseng, R. Jammy,
"Reliability of La-Doped Hf-Based Dielectrics nMOSFETs"
IEEE Transactions on Device and Materials Reliability
,
9 (2),
171-179,
2009.01.05.
http://doi.org/10.1109/TDMR.2009.2020741.
117
C.D. Young, G. Bersuker, R. Choi, D. Heh, B.H. Lee, Y. Zhao,
"Pulsed Id-Vg Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling"
IEEE Transactions on Electron Devices
,
56 (6),
1322-1329,
2009.05.20.
http://doi.org/10.1109/TED.2009.2019384.
116
H.S. Choi, S.H. Hong, R.H. Baek, K.T. Lee, C.Y. Kang, R. Jammy, B.H. Lee, Y.H. Jeong,
"Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric"
IEEE Electron Device Letters
,
30 (5),
523-525,
2009.04.07.
http://doi.org/10.1109/LED.2009.2015586.
115
B.H. Lee, C. Kang, R. Choi, H-D. Lee, G. Bersuker,
"Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics"
Appl. Phys. Lett.
,
94 (16),
162904,
2009.04.23.
http://doi.org/10.1063/1.3122924.
114
W.H. Choi, I.S. Han, H.M. Kwon, T.G. Goo, M.K. Na, O.S. Yoo, G.W. Lee, C.Y. Kang, R. Choi, S.C. Song, B.H. Lee, R. Jammy, Y.H. Jeong, H.-D. Lee,
"Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON"
Microelectronic Engineering
,
86 (3),
268-271,
2009.03.
http://doi.org/10.1016/j.mee.2008.04.008.
113
O.S. Yoo, J. Oh, K.S. Min, C.Y. Kang, B.H. Lee, K.T. Lee, M.K. Na, H.-M. Kwon, P. Majhi, H-H Tseng, R. Jammy, J.S. Wang, H.-D. Lee,
"Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs"
Microelectronic Engineering
,
86 (3),
259-262,
2009.03.
http://doi.org/10.1016/j.mee.2008.04.024.
112
C.D. Young, G. Bersuker, J. Tun, R.Choi, D. Heh, B.H. Lee,
"“Smart” TDDB algorithm for investigating degradation in high-κ gate dielectric stacks under constant voltage stress"
Microelectronic Engineering
,
86 (3),
287-290,
2009.03.
http://doi.org/10.1016/j.mee.2008.09.024.
111
I.S. Han, O.S. Yoo, W.H. Choi, H.M. Kwong, M.K. Na, C.Y. Kang, G. Bersuker, B.H. Lee, Y.H. Jeong, H.D. Lee, R. Jammy,
"Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs"
IEEE Electron Device Letters
,
30 (3),
298-301,
2009.03.
http://doi.org/10.1109/LED.2008.2012272.
110
H.B. Park, B.S. Ju, C.Y. Kang, C. Park, C.S. Park, B.H. Lee, T.W. Kim, B.S. Kim, R. Choi,
"Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment"
Applied Physics Letters
,
94 (4),
042911,
2009.01.30.
https://doi.org/10.1063/1.3078277.
109
C.D. Young, J.W. Yang, K. Matthews, S. Suthram, M.M. Hussain, G. Bersuker, C. Smith, R. Harris, R. Choi, B.H. Lee, H.H. Tseng,
"Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations"
J. Vac. Sci. Technol. B
,
27 (1),
468,
2009.02.09.
http://doi.org/10.1116/1.3072919.
108
J.-W. Yang, H.R. Harris, G. Bersuker, C.Y. Kang, J. Oh, B.H. Lee, H.-H. Tseng, R. Jammy,
"New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs"
IEEE Electron Device Letters
,
30 (1),
54-56,
2009.01.
http://doi.org/10.1109/LED.2008.2007661.
2008
107
H.J. Na, J. Lee, D. Heh , P. Sivasubramani , P. Kirsch, J. Oh, P.Majhi, B.H.Lee, S. Rivillon, Y. Chabal,
"Effective surface passivation methodologies for high performance germanium Metal Oxide Semiconductor Field Effect Transistors"
Appl. Phys. Lett.
,
93,
192115,
2008.11.14.
http://doi.org/10.1063/1.3028025.
106
O.S. Yoo, J. Oh, C.Y. Kang, B.H. Lee, I.S. Han, W.-H. Choi, H.-M. Kwon, M.-K. Na, P. Majhi, H.-H.Tseng, R. Jammy, J.S. Wang, H.-D. Lee,
"Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate"
Materials Science and Engineering B
,
154-155,
p.102-105,
2008.12.05.
http://doi.org/10.1016/j.mseb.2008.06.031.
105
J. G. Wang, J. Kim, C.Y. Kang, B.H. Lee, R. Jammy, R. Choi, and M. J. Kim,
"Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack"
Appl. Phys. Lett.
,
93,
161913,
2008.10.24.
http://doi.org/10.1063/1.3009572.
104
K. Choi, H.C.Wen, G. Bersuker, H. Harris, B.H.Lee,
"Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide"
Appl. Phys. Lett.
,
93,
133056,
2008.10.01.
http://doi.org/10.1063/1.2993335.
103
Y. Wang, K.P. Cheung, R. Choi, B.H.Lee,
"An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices-Part I"
IEEE Transactions on Electron Devices
,
55 (9),
p.2429-2436,
2008.08.08.
http://doi.org/10.1109/TED.2008.928489.
102
Y. Wang, K.P. Cheung, R. Choi, B.H.Lee,
"An Accurate Capacitance-Voltage Measurement Method for Highly leaky Devices-Part II"
IEEE Transactions on Electron Devices
,
55 (9),
p.2437-2442,
2008.08.19.
http://doi.org/10.1109/TED.2008.927659.
101
J.M. Lee, H.K. Park, M. Hasan, M. Jo, M. Chang, B. H. Lee, C.S. Park, C.Y. Kang and H. Hwang,
"Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient"
Appl. Phys. Lett.
,
92,
263505,
2008.07.03.
http://doi.org/10.1063/1.2953192.
100
K.T.Lee, C.Y. Kang, B.S. Ju, R. Choi, K.S.Min, O.S.Yoo, B.H.Lee, R. Jammy, J.C.Lee, H.D. Lee, Y.H. Jeong,
"Effects of In Situ O2 Plasma Treatment on OFF-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs"
IEEE Electron Device Letters
,
29 (6),
p.565-567,
2008.05.20.
http://doi.org/10.1109/LED.2008.922992.
99
C.Y.Kang, J.W. Yang, J.Oh, R.Choi, Y.J.Suh, H.C. Floresca, J. Kim, M Kim, B.H. Lee, H.H.. Tseng, R. Jammy,
"Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/ High-k Dielectric SOI FinFETs"
IEEE Electron Device Letters
,
29 (5),
p.487-490,
2008.04.22.
http://doi.org/10.1109/LED.2008.919782.
98
K.T.Lee, C.Y.Kang, O.S.Yoo, R.Choi, B.H.Lee, J.C.Lee, H.D.Lee and Y.H.Yoon,
"PBTI-Associated High Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High-k Dielectrics"
IEEE Electron Device Letters
,
29 (4),
p.389-391,
2008.03.21.
http://doi.org/10.1109/LED.2008.918257.
97
P.Kirsch, P. Sivasubramani , J. Huang , C. Young , M. Quevedo-Lopez , H.-C. Wen , H. Al-Shareef , K. Choi , C.S. Park , K. Freeman , M. Hussain , G. Bersuker , H. R. Harris , P. Majhi , R. Choi , P.Lysaght , B.H. Lee , H.-H. Tseng , R. Jammy , T. Boescke,
"Dipole Model Explaining High-k/Metal Gate Field Effect Transistor Threshold Voltage Tuning"
Appl. Phys. Lett.
,
92,
092901,
2008.03.04.
http://doi.org/10.1063/1.2890056.
96
A. Neugroschel, G.Bersuker, R.Choi, and B.H.Lee,
"Effect of the Interfacial SiO2 Layer in High-k HfO2 Gate Stacks on NBTI"
IEEE Transactions on Device and Materials Reliability
,
8 (1),
p.47-61,
2008.03.05.
http://doi.org/10.1109/TDMR.2008.916294.
95
O. Sharia, G. Bersuker, B. H. Lee and A. Demkov,
"Effects of aluminum incorporation on band alignment at the SiO2/HfO2 interface"
PHYSICAL REVIEW B
,
77,
p.1-7,
2008.02.28.
http://doi.org/10.1103/PhysRevB.77.085326.
94
H. Park, R.Choi, B.H. Lee, G. Bersuker, H. Hwang,
"Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor"
Jpn. J. Appl. Phys.
,
47 (1),
p.136-138,
2008.01.18.
http://doi.org/10.1143/JJAP.47.136.
93
P.S. Lysaght, J.C. Woicik, M. A. Sahiner, B.H. Lee and R. Jammy,
"Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature"
Journal of Non-Crystalline Solids
,
354,
p.399-403,
2007.10.26.
http://doi.org/10.1016/j.jnoncrysol.2007.07.050.
92
H.K. Park, M.S. Jo, H.J. Choi, M. Hasan, R. Choi, P. Kirsch, C.Y. Kang, B.H. Lee, T.W. Kim, T.H. Lee and H. Hwang,
"The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices"
IEEE Electron Device Letters
,
29 (1),
p.54-56,
2007.12.26.
http://doi.org/10.1109/LED.2007.911992.
91
H.C. Wen, P. Majhi, K.Choi, C.S.Park, H.Alshareef, H.Rusty, H.Luan, H.Niimi, H.B.Park, G.Bersuker, P.Lysaght, D.L.Kwong, S.C.Song, B. H. Lee and R. Jammy,
"Decoupling the Fermi level pinning effect and intrinsic limitations on p-type effective work function metal electrodes"
Microelectronic Engineering
,
85,
p.2-8,
2008.05.16.
http://doi.org/10.1016/j.mee.2007.05.006.
90
Y.Y.Zhang, J.Oh, T.S Bae, Z.Zhong, S.G.Li, S.Y. Jung, K.Y.Park, G.W.Lee, J.S.Wang, P.Majhi, B.H.Lee, H.H. Tseng, Y.H. Jeong, H.D. Lee,
"Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs"
Electrochemical and Solid-State Lett.
,
11 (1),
p.H1-H3,
2007.10.22.
http://doi.org/10.1149/1.2795836.
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