포항공대 EESL
Fearless challenge
HOME
Lab board
News
Gallery
Research
Research topic
Project
Resources
PEOPLE
Professor
Member
Visitor
Alumni
Publication
Journals
Conferences
Patents/Book
BOARD
Lab board
News
Gallery
CONTACT US
LOGIN
Research
Research topic
Project
Resources
PEOPLE
Professor
Member
Visitor
Alumni
Publication
Journals
Conferences
Patents/Book
BOARD
Lab board
News
Gallery
전체메뉴
전체메뉴
CONTACT US
LOGIN
Research
Research topic
Project
Resources
PEOPLE
Professor
Member
Visitor
Alumni
Publication
Journals
Conferences
Patents/Book
BOARD
Lab board
News
Gallery
Journals 카테고리
전체
2024
2023
2022
2021
2020
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
열린 분류
2000
1999
1997
Total 4건
1 페이지
게시판 검색
2000
4
W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, and J.C. Lee,
"Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application"
Applied Physics Letters
,
77,
3269,
2000.11.13.
https://doi.org/10.1063/1.1326482.
3
W. Qi, R. Nieh, E. Dhamarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee,
"Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application"
Applied Physics Letters
,
77 (11),
1704,
2000.09.05.
https://doi.org/10.1063/1.1308535.
2
L. Kang, B. H. Lee, W. Qi, R. Nieh, Y. Jeon, K. Onishi, S. Gopalan and J. C. Lee,
"Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric"
IEEE Electron Device Letters
,
21 (4),
181,
2000.04.
https://doi.org/10.1109/55.830975.
1
B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C.Lee,
"Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing"
Applied Physics Letters
,
76,
1926,
2000.03.27 (First journal paper on thin HfO2 gate dielectric, cited more than 750 times).
https://doi.org/10.1063/1.126214.
검색
검색대상
Title
Journal
Author
검색어
필수
검색
닫기
TOP