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Total 16건 1 페이지

2009
16

H. Park, M. Chang, M. Jo, R. Choi, B.H. Lee, H. Hwang, "Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition" Jpn. J. Appl. Phys., 48 (11), 116506, 2009.11.20. http://doi.org/10.1143/JJAP.48.116506.
15

H.B. Park, C.S. Park, C.Y. Kang, S.C. Song, B.H. Lee, T.Y. Jang, T.W. Kim, J.K. Jeong, R. Choi, "Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric" Applied Physics Letters, 95 (19), 192113, 2009.11.09. http://doi.org/10.1063/1.3264086.
14

R. Choi, T.W. Kim, H. Park, B.H. Lee, "Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric" Japanese Journal of Applied Physics, 48 (9), 091404, 2009.09.24. http://doi.org/10.1143/JJAP.48.091404.
13

C.Y. Kang, R. Choi, B.H. Lee, R. Jammy, "Reliability Characteristics of La-doped High-k/Metal Gate nMOSFETs" Journal of Semiconductor Technology and Science, 9 (3), 166-173, 2009.12. http://doi.org/10.5573/JSTS.2009.9.3.166.
12

K.T. Lee, C.Y. Kang, M.S. Park, B.H. Lee, H.K. Park, H. Hwang, H.H. Tseng, R. Jammy, Y.H. Jeong, "A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress" IEEE Electron Device Letters, 30 (7), 760-762, 2009.05.27. http://doi.org/10.1109/LED.2009.2021007.
11

C.Y. Kang, P. Kirsch, B.H. Lee, H.H. Tseng, R. Jammy, "Reliability of La-Doped Hf-Based Dielectrics nMOSFETs" IEEE Transactions on Device and Materials Reliability, 9 (2), 171-179, 2009.01.05. http://doi.org/10.1109/TDMR.2009.2020741.
10

C.D. Young, G. Bersuker, R. Choi, D. Heh, B.H. Lee, Y. Zhao, "Pulsed Id-Vg Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling" IEEE Transactions on Electron Devices, 56 (6), 1322-1329, 2009.05.20. http://doi.org/10.1109/TED.2009.2019384.
9

H.S. Choi, S.H. Hong, R.H. Baek, K.T. Lee, C.Y. Kang, R. Jammy, B.H. Lee, Y.H. Jeong, "Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric" IEEE Electron Device Letters, 30 (5), 523-525, 2009.04.07. http://doi.org/10.1109/LED.2009.2015586.
8

B.H. Lee, C. Kang, R. Choi, H-D. Lee, G. Bersuker, "Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics" Appl. Phys. Lett., 94 (16), 162904, 2009.04.23. http://doi.org/10.1063/1.3122924.
7

W.H. Choi, I.S. Han, H.M. Kwon, T.G. Goo, M.K. Na, O.S. Yoo, G.W. Lee, C.Y. Kang, R. Choi, S.C. Song, B.H. Lee, R. Jammy, Y.H. Jeong, H.-D. Lee, "Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON" Microelectronic Engineering, 86 (3), 268-271, 2009.03. http://doi.org/10.1016/j.mee.2008.04.008.
6

O.S. Yoo, J. Oh, K.S. Min, C.Y. Kang, B.H. Lee, K.T. Lee, M.K. Na, H.-M. Kwon, P. Majhi, H-H Tseng, R. Jammy, J.S. Wang, H.-D. Lee, "Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs" Microelectronic Engineering, 86 (3), 259-262, 2009.03. http://doi.org/10.1016/j.mee.2008.04.024.
5

C.D. Young, G. Bersuker, J. Tun, R.Choi, D. Heh, B.H. Lee, "“Smart” TDDB algorithm for investigating degradation in high-κ gate dielectric stacks under constant voltage stress" Microelectronic Engineering, 86 (3), 287-290, 2009.03. http://doi.org/10.1016/j.mee.2008.09.024.
4

I.S. Han, O.S. Yoo, W.H. Choi, H.M. Kwong, M.K. Na, C.Y. Kang, G. Bersuker, B.H. Lee, Y.H. Jeong, H.D. Lee, R. Jammy, "Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs" IEEE Electron Device Letters, 30 (3), 298-301, 2009.03. http://doi.org/10.1109/LED.2008.2012272.
3

H.B. Park, B.S. Ju, C.Y. Kang, C. Park, C.S. Park, B.H. Lee, T.W. Kim, B.S. Kim, R. Choi, "Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment" Applied Physics Letters, 94 (4), 042911, 2009.01.30. https://doi.org/10.1063/1.3078277.
2

C.D. Young, J.W. Yang, K. Matthews, S. Suthram, M.M. Hussain, G. Bersuker, C. Smith, R. Harris, R. Choi, B.H. Lee, H.H. Tseng, "Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations" J. Vac. Sci. Technol. B, 27 (1), 468, 2009.02.09. http://doi.org/10.1116/1.3072919.
1

J.-W. Yang, H.R. Harris, G. Bersuker, C.Y. Kang, J. Oh, B.H. Lee, H.-H. Tseng, R. Jammy, "New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs" IEEE Electron Device Letters, 30 (1), 54-56, 2009.01. http://doi.org/10.1109/LED.2008.2007661.

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