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Total 17건
1 페이지
게시판 검색
2013
17
M.H. Choe, B.H.Lee, W.J. Park, J.W.Kang, S.H. Jeong , K.J. Cho , W.-K. Hong , B.H.Lee, K.H.Lee. S.J.Park. T.H.Lee,
"Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors"
Appl. Phys. Lett.
,
103,
223305,
2013.11.26.
http://dx.doi.org/10.1063/1.4833544.
16
J.J. Kim, M.W.Kim, U.J. Jung, K.E.Chang, S.K.Lee, Y.H.Kim, Y.G. Lee, R.Choi, B.H.Lee*,
"Intrinsic time zero dielectric breakdown characteristics of HfAlO Alloys"
IEEE Trans. Electron Device
,
60(11),
p.3683,
2013.09.30.
https://doi.org/10.1109/TED.2013.2281857.
15
J.Noh, M.Jo, C.Y.Kang, D. Gilmer, P.Kirsch, R.Jammy, J.C.Lee, B.H.Lee*,
"Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOx-Based ReRAMs"
IEEE Elect. Dev. Lett.
,
34(9),
p.1133,
2013.07.17.
https://doi.org/10.1109/LED.2013.2271831.
14
M. Son, J.G. Son,K.-J. Moon, B.H. Lee, J.-M. Myoung, M. S. Strano, M.-H. Ham*, and C.A. Ross,
"Sub-10-nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography"
Advanced Materials
,
25,
pp.4723-4728,
2013.06.25.
https://doi.org/10.1002/adma.201300813.
13
S.S.Park, J.Noh, M.Choo, A.M.Sheri, M.Chang, Y.B.Kim, C.J.Kim, M.Jeon, B.G.Lee, B.H.Lee, H.Hwang,
"Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device"
Nanotechnology
,
24,
384009,
2013.09.02 (invited).
http://dx.doi.org/10.1088/0957-4484/24/38/384009.
12
Y.G.Lee, C.G.Kang, C.Cho, Y.H.Kim, H.J.Hwang, B.H.Lee*,
"Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using short pulse I-V method"
Carbon
,
60,
p.453-460,
2013.08.
http://dx.doi.org/10.1016/j.carbon.2013.04.060.
11
C.G.Kang, S.K.Lee, S.H.Choe, Y.G.Lee, C.L.Lee, B.H.Lee*,
"Intrinsic photocurrent characteristics of graphene photodetector passivated with Al2O3"
Optics Express
,
21(20),
p.23391,
2013.09.25.
https://doi.org/10.1364/OE.21.023391.
10
H.J. Hwang, J.H. Yang, S.C.Kang, C. Cho, C.G. Kang, Y.G. Lee, B.H.Lee*,
"Novel Multi-bit Memory Device Using Metal/PVDF-TrFE/Graphene Stack"
Microelectronics Engineering
,
109,
p.87-89,
2013.09.
https://doi.org/10.1016/j.mee.2013.02.094.
9
C.Cho, Y.G.Lee, U.Jung, C.G.Kang, S.K.Lim, H.J.Hwang, H.J.Choi, B.H.Lee*,
"Correlation between the hysteresis and the initial defect density of graphene"
Appl. Phys. Lett.
,
103,
p.083110,
2013.08.20.
https://doi.org/10.1063/1.4818770.
8
S.H. Kim, J.B. Park , J.Y. Woo , C. Cho , W.T. Lee , J.H. Shin , G. Choi , S.S. Park , D.S. Lee , B.H. Lee , H. Hwang,
"Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories"
Microelectronics Engineering
,
107,
p.33-36,
2013.07.
http://dx.doi.org/10.1016/j.mee.2013.02.084.
7
W.Park, J.H.Yang, C.G.Kang, Y.G.Lee, H.J.Hwang, C.Cho, S.K.Lim, S.C.Kang, W.-K Hong, S.K.Lee, S.Lee, and B.H.Lee*,
"Characteristics of pressure sensitive touch sensor using piezoelectric PVDF-TrFE/MoS2 stack"
Nanotechnology
,
24,
475501,
2013.09.31.
http://dx.doi.org/10.1088/0957-4484/24/47/475501.
6
H.J. Hwang, J.H.Yang, Y.G.Lee, C.Cho, C.G.Kang, S.C.Kang, W.Park, and B.H.Lee*,
"Ferroelectric Polymer Gated Graphene Memory with Very High Speed Conductivity Modulation"
Nanotechnology
,
24,
2013.04.04 Also selected as a paper of particular interest..
http://dx.doi.org/10.1088/0957-4484/24/17/175202.
5
Y.G.Lee, Y.J.Kim, C.G.Kang, C.Cho, H.J.Hwang, U.J. Jung, B.H.Lee*,
"Influences of extrinsic factors on the accuracy of mobility extraction for graphene MOSFETs"
Appl. Phys. Lett.
,
102(9),
093121,
2013.03.08.
https://doi.org/10.1063/1.4795295.
4
C.G.Kang, S.K.Lim, S.C.Lee, S.K.Lee,C.Cho, Y.G.Lee, H.J.Hwang, Y.H. Kim, H.J.Choi, S.H.Choe, M.H.Ham and B.H.Lee*,
"Effects of Multi-Layer Graphene Capping on Cu interconnects"
Nanotechnology
,
24,
115707,
2013.03.01 Also selected as article of particular interest..
http://dx.doi.org/10.1088/0957-4484/24/11/115707.
3
J.W.Yoon, W.Park, G.Y.Bae, Y.H.Kim, H.S.Jang, Y.J. Hyung, S.K.Lim, Y.H.Kahng, W.K.Hong, B.H.Lee, H.C.Ko,
"Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes"
Small
,
9(19),
p.3295,
2013.02.18.
https://doi.org/10.1002/smll.201300134.
2
K.S. Min, C. Park,C.Y. Kang, C.S. Park, B.J. Park, Y.W. Kim, B.H. Lee, Jack C. Lee, G. Bersuker, P. Kirsch, R. Jammy, G.Y. Yeom,
"Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate"
Solid State Electronics
,
86,
p.75-78,
2013.08.
https://doi.org/10.1016/j.sse.2012.07.023.
1
C.G.Kang, Y.G.Lee, S.K.Lee, E.J,Park, C.Cho, S.K.Lim, H.J.Hwang,H.J.Chung, S.Seo, B.H.Lee*,
"Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors"
Carbon
,
53,
p.182-187,
2013.53.
https://doi.org/10.1016/j.carbon.2012.10.046.
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