Journals 1 페이지 | 포항공대 EESL

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Total 14건 1 페이지

2016
14

Y.J. Kim, S.Y. Kim, J. Noh, C.H. Shim, U.J. Jung, S.K. Lee, K.E. Chang, C. Cho, B.H. Lee*, "Demonstration of Complimentary Ternary Graphene Field Effect Transistors" Scientific Reports, 6, p.39393, 2016.12.19. https://doi.org/10.1038/srep39353.
13

Y. Kumaresan, Y.S. Pak, N.S. Lim, Y.H. Kim, M.J. Park, S.M. Yoon, H.M. Youn, H. Lee, B.H. Lee, G.Y. Jung, "Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer" Scientific Reports, 6, 37764, 2016.11.23. https://doi.org/10.1038/srep37764.
12

N. Fujisawa, T.F. Zhang, B.H.Lee, K.H.Kim, "A robust method for extracting the mechanical properties of thin films with rough surfaces by nanoindentation" J. of Materials Research, 31(23), p.3777-3785, 2016.12.14. https://doi.org/10.1557/jmr.2016.428.
11

A.K. Khan, B.,H.Lee*, "Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device" AIP Advances, 6, p.096022, 2016.09.23. https://doi.org/10.1063/1.4963776.
10

Y.H. Kim, A.R. Kim, J.H. Yang, K.E. Chang, J. Kwon, S. Y. Choi, K. H. Lee, B.H. Lee, M.G. Hahm, and B. Cho, "Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering" Nano Letters, 16(9), p.5928-5933, 2016.08.23. https://doi.org/10.1021/acs.nanolett.6b02893.
9

B.J.Co, A.R.Kim, D.J.Kim, H.S.Chung,S.Y.Choi, J.D. Kwon, S.W.Park, Y.H.Kim, B.H.Lee, K.H.Lee, D.H.Kim, J.W.Nam, M.G.Hahm, "Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor" ACS Applied Materials and Interfaces, 8, p.19635-19632, 2016.07.07. https://doi.org/10.1021/acsami.6b05943.
8

Y.H.Kim, W.J.Park, J.H. Yang, C Cho, S.K.Lee, B.H.Lee*, "Reduction of Low Frequency Noise at Multilayer MoS2 FETs using a Fermi Level De-pinning Layer" Physica Status Solidi-RRL, 10(8), p.634-638, 2016.06.29. https://doi.org/10.1002/pssr.201600136.
7

J.W. Yoon, Y.K. Jeong, H.J. Kim, S.G. Yoo, Y.H. Kim , Y.K. Hwang, Y.J. Hyun, W.K. Hong, B.H.Lee, S.H. Choa, H.C. Ko, "Robust stretchable indium gallium Zinc oxide-based electronic textiles formed by cilia-assisted transfer printing" Nature communications, 7, p.11477, 2016.06.01. https://doi.org/10.1038/ncomms11477.
6

Y.G.Lee, S.K.Lim, C.G.Kang, Y.J.Kim, D.H.Choi, H.J.Chung, R.Choi, B.H.Lee*, "Origin of the channel width dependent field effect mobility of graphene field effect transistors" Microelectronic Engineering, 163, p.55-59, 2016.06.06. https://doi.org/10.1016/j.mee.2016.06.004.
5

Y.H.Kim, S.C.Kang, S.K.Lee, U.J.Jung, S.M. Kim, B.H.Lee*, "Hot carrier instability of nMOSFETs under Pseudo Random Bit Sequence stress" IEEE Electron Device Letters, 37(4), p.366-368, 2016.03.01. https://doi.org/10.1109/LED.2016.2533568.
4

S.K.Lee, Y.J.Kim and B.H.Lee*, "Study on future electronic device using graphene" Vacuum Magazine, 3(1), p.22-31, 2016.03.30. https://doi.org/10.5757/vacmac.3.1.22.
3

H.T.Pham, J.H.Yang, D.S. Lee, B.H.Lee, H.D.Jeong, "Ferroelectric/Dielectric Double Gate Insulator Spin-Coated by Using Barium Titanate Nanocrystals for Indium Oxide Nanocrystal–Based Thin-Film Transistor" ACS Applied Materials and Interfaces, 8(11), p. 7248-7256, 2016.03.10. https://doi.org/10.1021/acsami.6b00109.
2

A.R.Kim, Y.H.Kim, J.W.Nam, H.S. Chung, D.J.Kim, J.D.Kwon, S.W.Park, J.C.Park, S.Y.Choi, B.H.Lee, J.H.Park,K.H.Lee, D.H.Kim, S.M.Choi,A. Pulickel, M.G.Hahm, B.J.Cho, "Alloyed 2D metal-semiconductor atomic layer junctions" Nano Letters, 16(3), p.1890–1895, 2016.02.10. https://doi.org/10.1021/acs.nanolett.5b05036.
1

J.H.Yang,T.H. Ryu, Y. Lansac, Y.H. Jang, B.H.Lee*, "Shear stress induced enhancement of Piezoelectric properties of PVDF-TrFE thin film" Organic Electronics, 28, p.67-72, 2015.10.24. https://doi.org/10.1016/j.orgel.2015.10.018.

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