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    • The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices
    Journal
    IEEE Electron Device Letters
    Vol
    29 (1)
    Page
    p.54-56
    Author
    H.K. Park, M.S. Jo, H.J. Choi, M. Hasan, R. Choi, P. Kirsch, C.Y. Kang, B.H. Lee, T.W. Kim, T.H. Lee and H. Hwang
    Year
    2008
    Date
    2007.12.26
    doi
    http://doi.org/10.1109/LED.2007.911992
    File
    2008_EDL_HKPARK.pdf (488.4K) 0회 다운로드 DATE : 2021-04-01 14:47:00