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    • Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor
    Journal
    Jpn. J. Appl. Phys.
    Vol
    47 (1)
    Page
    p.136-138
    Author
    H. Park, R.Choi, B.H. Lee, G. Bersuker, H. Hwang
    Year
    2008
    Date
    2008.01.18
    doi
    http://doi.org/10.1143/JJAP.47.136
    File
    2008_JAP_HPARK.pdf (85.0K) 0회 다운로드 DATE : 2021-04-01 14:45:02