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Effect of the Interfacial SiO2 Layer in High-k HfO2 Gate Stacks on NBTI

Journal

IEEE Transactions on Device and Materials Reliability

Vol

8 (1)

Page

p.47-61

Author

A. Neugroschel, G.Bersuker, R.Choi, and B.H.Lee

Year

2008

Date

2008.03.05

doi

http://doi.org/10.1109/TDMR.2008.916294

File

2008_TDAMR_ANEUGROSCHEL.pdf (1.6M) 0회 다운로드 DATE : 2021-04-01 14:42:38

Link

http://doi.org/10.1109/TDMR.2008.916294 163회 연결