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Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/ High-k Dielectric SOI FinFETs

Journal

IEEE Electron Device Letters

Vol

29 (5)

Page

p.487-490

Author

C.Y.Kang, J.W. Yang, J.Oh, R.Choi, Y.J.Suh, H.C. Floresca, J. Kim, M Kim, B.H. Lee, H.H.. Tseng, R. Jammy

Year

2008

Date

2008.04.22

doi

http://doi.org/10.1109/LED.2008.919782

File

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Link

http://doi.org/10.1109/LED.2008.919782 118회 연결