Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/ High-k Dielectric SOI FinFETs
- Journal
- IEEE Electron Device Letters
- Vol
- 29 (5)
- Page
- p.487-490
- Year
- 2008
- File
- 2008_EDL_CYKANG.pdf (489.9K) 0회 다운로드 DATE : 2021-04-01 14:36:57
- Link
- http://doi.org/10.1109/LED.2008.919782 117회 연결