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Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack

Journal

Appl. Phys. Lett.

Vol

93

Page

161913

Author

J. G. Wang, J. Kim, C.Y. Kang, B.H. Lee, R. Jammy, R. Choi, and M. J. Kim

Year

2008

Date

2008.10.24

doi

http://doi.org/10.1063/1.3009572

File

2008_APL_JGWANG.pdf (465.6K) 0회 다운로드 DATE : 2021-04-01 15:04:03

Link

http://doi.org/10.1063/1.3009572 266회 연결