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Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Journal

Materials Science and Engineering B

Vol

154-155

Page

p.102-105

Author

O.S. Yoo, J. Oh, C.Y. Kang, B.H. Lee, I.S. Han, W.-H. Choi, H.-M. Kwon, M.-K. Na, P. Majhi, H.-H.Tseng, R. Jammy, J.S. Wang, H.-D. Lee

Year

2008

Date

2008.12.05

doi

http://doi.org/10.1016/j.mseb.2008.06.031

File

2008_MSEB_OSYOO.pdf (710.2K) 0회 다운로드 DATE : 2021-04-01 15:06:37

Link

http://doi.org/10.1016/j.mseb.2008.06.031 154회 연결