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Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

Journal

IEEE Electron Device Letters

Vol

21 (4)

Page

181

Author

L. Kang, B. H. Lee, W. Qi, R. Nieh, Y. Jeon, K. Onishi, S. Gopalan and J. C. Lee

Year

2000

Date

2000.04

doi

https://doi.org/10.1109/55.830975

File

2000_EDL_L.Kang.pdf (78.0K) 0회 다운로드 DATE : 2021-04-01 15:15:37

Link

https://doi.org/10.1109/55.830975 187회 연결