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Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

Journal

Applied Physics Letters

Vol

77

Page

3269

Author

W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, and J.C. Lee

Year

2000

Date

2000.11.13

doi

https://doi.org/10.1063/1.1326482

File

2000_APL_W.Qi-1.pdf (350.8K) 0회 다운로드 DATE : 2021-04-01 15:27:11

Link

https://doi.org/10.1063/1.1326482 178회 연결