Evaluation of NBTI in HfO2 Gate Dielectric Stacks With Tungsten Gates
- Journal
- IEEE ELECTRON DEVICE LETTERS
- Vol
- 25 (3)
- Page
- 153
- Year
- 2004
- File
- 2004_EDL_S.Zafar.pdf (146.0K) 0회 다운로드 DATE : 2021-04-01 15:45:42
- Link
- https://doi.org/10.1109/LED.2004.824244 144회 연결