포항공대 EESL EESL Fearless challenge

전체메뉴

전체메뉴
CONTACT US
  • LOGIN
    • Interfacial Layer-Induced Mobility Degradation in High-k Transistors
    Journal
    Japanese Journal of Applied Physics
    Vol
    43 (11S)
    Page
    7899
    Author
    G. Bersuker, J. Barnett, N. Moumen, S. Stemmer, M. Agustin, B. Foran, C. D. Young, P. Lysaght, B. H. Lee, Peter M. Zeitzoff, and H. R. Huff
    Year
    2004
    Date
    2004.11.15
    doi
    https://doi.org/10.1143/JJAP.43.7899
    File
    2004_JJAP_G.Bersuker.pdf (499.6K) 0회 다운로드 DATE : 2021-04-01 15:54:50