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    • Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics
    Journal
    Appl. Phys. Lett.
    Vol
    98
    Page
    183508
    Author
    Y.G. Lee, C.G. Kang, U.J. Jung, J.J. Kim, H.J. Hwang, H.J. Jeong, S. Seo, R. Choi, B.H. Lee
    Year
    2011
    Date
    2011.05.06
    doi
    https://doi.org/10.1063/1.3588033
    File
    2011_APL_YGLEE.pdf (250.3K) 1회 다운로드 DATE : 2021-03-30 17:29:25