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    • Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
    Journal
    Japanese Journal of Applied Physics
    Vol
    44 (4B)
    Page
    2201-2204
    Author
    R. Choi, B. H. Lee, C.D. Young, J.H. Sim, and G. Bersuker
    Year
    2005
    Date
    2005.04.21
    doi
    https://doi.org/10.1143/JJAP.44.2201
    File
    2005_JJAP_R.Choi.pdf (207.2K) 0회 다운로드 DATE : 2021-04-01 16:06:15