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    • Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
    Journal
    Japanese Journal of Applied Physics
    Vol
    44 (4B)
    Page
    2420-2423
    Author
    J.H. Sim, R. Choi, B. H. Lee, C. Young and G. Bersuker
    Year
    2005
    Date
    2005.04.21
    doi
    http://iopscience.iop.org/1347-4065/44/4S/2420
    File
    2005_JJAP_JHSIM.pdf (292.2K) 0회 다운로드 DATE : 2021-04-01 16:08:05