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    • Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
    Journal
    Nanotechnology
    Vol
    22(25)
    Page
    p.254023
    Author
    K.Seo, I.S.Kim, S.J. Jung, M.S.Jo, S.S.Park, J.B.Park, J.H. Shin, K.P. Biju, J.M.Kong, K.H.Lee, B.H. Lee, H. Hwang
    Year
    2011
    Date
    2011.05.16
    doi
    http://dx.doi.org/10.1088/0957-4484/22/25/254023
    File
    2011-Nanotech-KASEO.pdf (943.9K) 0회 다운로드 DATE : 2021-03-30 20:50:59