Effect of ALD HfO2 thickness on charge trapping and mobility
Journal
Microelectronic Engineering
Vol
80
Page
218-221
Author
J.H.Sim, S.C.Song, P.D.Kirsch, C.D.Young, R.Choi, D.L.kwong, B. H. Lee and G.Bersuker
Year
2005
Date
2005.06.17
doi
https://doi.org/10.1016/j.mee.2005.04.071
File
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