Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes
- Journal
- APPLIED PHYSICS LETTERS
- Vol
- 87
- Page
- 082903
- Year
- 2005
- File
- 2005_APL_P.S.Lysaght.pdf (447.5K) 0회 다운로드 DATE : 2021-04-01 16:39:27
- Link
- https://doi.org/10.1063/1.2011827 192회 연결