포항공대 EESL Fearless challenge

Improved Interface Quality and Charge-Trapping Characteristics of MOSFETs With High-k Gate Dielectric

Journal

IEEE ELECTRON DEVICE LETTERS

Vol

26 (10)

Page

725

Author

H. Park, M. S. Rahman, M. Chang, B. H. Lee, R. Choi, C. D. Young and H. Hwang

Year

2005

Date

2005.09.19

doi

https://doi.org/10.1109/LED.2005.855422

File

2005_EDL_H.Park.pdf (130.6K) 0회 다운로드 DATE : 2021-04-01 16:45:54

Link

https://doi.org/10.1109/LED.2005.855422 161회 연결