포항공대 EESL Fearless challenge

Nitrogen-treated Memristive Device for Tunable Electronic Synapse

Journal

Semiconductor Science and Technology

Vol

29

Page

p.104006

Author

S.S.Park, M.Siddik, J.Noh, D.S.Lee, J.Y.Woo, K.Moon, B.H.Lee, H.Hwang*

Year

2014

Date

2014.09.18

doi

https://doi.org/10.1088/0268-1242/29/10/104006

File

2014_SST_SSPARK.pdf (1,007.4K) 0회 다운로드 DATE : 2021-04-01 16:56:18

Link

https://doi.org/10.1088/0268-1242/29/10/104006 163회 연결