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    • Unveiling the role of Al2O3 interlayer in indium gallium zinc oxide transistors
    Journal
    Physica Status Solidi A
    Vol
    218(6)
    Page
    2000621
    Author
    T.H.Kim, W.J.Park, S.Y. Oh, S.Y. Kim, N. Yamata, H. Kobayashi, H.Y. Jang, J.H. Nam, H. Habazaki, B.H. Lee, B.J. Cho
    Year
    2021
    Date
    2020.12.30
    doi
    https://doi.org/10.1002/pssa.202000621
    File
    pssa.202000621.pdf (2.2M) 3회 다운로드 DATE : 2021-04-01 17:45:36