Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry
- Journal
- IEEE Transactions on Electron Devices
- Vol
- 62 (4)
- Page
- 1092-1097
- Year
- 2015
- File
- 2015-TED-YHKim.pdf (1.6M) 3회 다운로드 DATE : 2021-04-01 20:53:48
- Link
- https://doi.org/10.1109/TED.2015.2404920 176회 연결