포항공대 EESL Fearless challenge

Dipole-induced gate leakage reduction in scaled MOSFETs with a highly doped polysilicon/nitrided oxide gate stack

Journal

Microelectronic Engineering

Vol

142

Page

1-6

Author

U.J. Jung, J.J. Kim, Y.H. Kim, Y.G. Lee, S.C Song, J. Blatchford, B. Kirkpatrick, H.Niimi, B.H.Lee

Year

2015

Date

2015.06.14

doi

https://doi.org/10.1016/j.mee.2015.06.005

File

2015-ME-UJung.pdf (1.3M) 0회 다운로드 DATE : 2021-04-01 21:08:14

Link

https://doi.org/10.1016/j.mee.2015.06.005 208회 연결