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Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

Journal

J. Appl. Phys.

Vol

99(2)

Page

023508

Author

P.Kirsch, M.A.Quevedo-Lopez, H.J. Li, Y. Senzaki, J.J. Peterson, S.C.Song, S.A.Krishnan, N. Moumen, J. Barnett, G. Bersuker, P.Y. Hung, B.H.Lee, T. Lafford, Q. Wang, D. Gay, J. G.Ekerdt

Year

2006

Date

2006.01.19

doi

https://doi.org/10.1063/1.2161819

File

2006_APL_PKIRCH.pdf (619.0K) 0회 다운로드 DATE : 2021-04-01 21:09:28

Link

https://doi.org/10.1063/1.2161819 209회 연결