목록 게시판 리스트 옵션 검색 Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations Journal Appl. Phys. Lett. Vol 99(19) Page 192110 Author S.H. Kim, J.B. Park, S.J. Jung, W.T. Lee, J.Y.Woo, C.Cho, M. Siddik, J.H. Shin, B.H.Lee, H.Hwang Year 2011 Date 2011.11.11 doi http://link.aip.org/link/doi/10.1063/1.3659692?ver=pdfcov File 2011-APL-SHKIM.pdf (1.4M) 0회 다운로드 DATE : 2021-03-30 21:03:54 Link http://link.aip.org/link/doi/10.1063/1.3659692?ver=pdfcov 78회 연결
