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    • Enhanced Reliability and Performance of High-k MOSFET by Two-Step Annealing
    Journal
    Electrochem. Solid-State Lett.
    Vol
    9(4)
    Page
    G127
    Author
    M. S. Rahman, H. Park, M. Chang, D. Lee, B. H. Lee and H. Hwang
    Year
    2006
    Date
    2006.02.14
    doi
    https://doi.org/10.1149/1.2168287
    File
    2006_ESSL_MSRAHMAN.pdf (89.7K) 0회 다운로드 DATE : 2021-04-01 21:11:15