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    • High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction
    Journal
    Advanced Electronic Materials
    Vol
    5 (6)
    Page
    1800957
    Author
    K.E.Chang, C.H.Kim, T.J.Yoo, M.K.Kwon, S.Heo, S.Y.Kim, Y.Hyun, J.I.Yoo, H.C.Ko, B.H. Lee
    Year
    2019
    Date
    2019.03.28
    doi
    https://doi.org/10.1002/aelm.201800957
    File
    KEChang_AEM_2019.pdf (1.8M) 3회 다운로드 DATE : 2021-04-01 21:23:21