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    • Advantages of a buried-gate structure for graphene field-effect transistor
    Journal
    Semiconductor Science and Technology
    Vol
    34 (5)
    Page
    055010
    Author
    S.K. Lee, Y.J. Kim, S. Heo, W. Park, T.J. Yoo, C. Cho, H.J. Hwang, and B.H. Lee*, " Advantages of a buried-gate structure for graphene field-effect transistor
    Year
    2019
    Date
    2019.04.09
    doi
    https://doi.org/10.1088/1361-6641/ab0d54
    File
    2019-SST-SKLee.pdf (1,011.9K) 2회 다운로드 DATE : 2021-04-01 21:25:57