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Co-Optimization of Metal Gate/High-k Stack to Achieve High-Field Mobility > 90% of SiO2 Universal with EOT = ~1 nm

Journal

IEEE Elec. Dev. Lett.

Vol

27(3)

Page

185

Author

Z. Zhang, S.C. Song, M. Quevedo-Lopez, K. Choi, P. Kirsch, P. Lysaght, and B. H. Lee

Year

2006

Date

2006.02.27

doi

10.1109/LED.2006.870245

File

2006_EDL_ZZHANG.pdf (729.5K) 0회 다운로드 DATE : 2021-04-01 21:31:16

Link

http://10.1109/LED.2006.870245 445회 연결