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    • Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics
    Journal
    IEEE Electron Device Letters
    Vol
    40 (11)
    Page
    1716-1719
    Author
    S.C.Kang, D.H.Kim,S.J. Kang, S.K.Lee, C.H.Choi, D.S.Lee and B.H. Lee
    Year
    2019
    Date
    2019.09.23
    doi
    https://doi.org/10.1109/LED.2019.2942837
    File
    SCKang-EDL-2019.pdf (951.4K) 4회 다운로드 DATE : 2021-04-01 21:33:26