포항공대 EESL Fearless challenge

Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectric

Journal

Microelectronic Engineering

Vol

83(3)

Page

460-462

Author

S.H.Bae, S.C.Song, K.Choi, G.Bersuker, G.A.Brown, D.L.Kwong, and B. H. Lee

Year

2006

Date

2006.03

doi

https://doi.org/10.1016/j.mee.2005.11.010

File

2006_ME_S.H.Bae.pdf (175.0K) 0회 다운로드 DATE : 2021-04-01 21:34:07

Link

https://doi.org/10.1016/j.mee.2005.11.010 104회 연결