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    • Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks
    Journal
    Jpn. J. Appl. Phys.
    Vol
    45(4S)
    Page
    2945-2948
    Author
    S.A. Krishnan, M.Quevedo, R. Harris, P. D. Kirsch, R. Choi, B. H. Lee, G. Bersuker and J.C. Lee
    Year
    2006
    Date
    2006.04.25
    doi
    10.1143/JJAP.45.2945
    File
    2006_JJAP_S.A.Krishnan.pdf (98.8K) 0회 다운로드 DATE : 2021-04-01 21:42:28