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    • Improved Gate-Edge Profile of Metal/High-k Gate Stack Using a NH3 Ashing Process in Gate-First CMOSFETs
    Journal
    Electrochem. and Solid-State Lett.
    Vol
    9
    Page
    G4
    Author
    S. C. Song, Z. Zhang, C. Huffman, S. H Bae, J. H. Sim, and B. H. Lee
    Year
    2006
    Date
    2005.12.07
    doi
    https://doi.org/10.1149/1.2131243
    File
    2006_ECS_S.C.Song-1.pdf (462.8K) 0회 다운로드 DATE : 2021-04-01 21:43:56