Highly Manufacturable Advanced Gate Stack Technology for Sub 45nm Self-Aligned Gate-First CMOSFETs
Journal
IEEE Trans. on Elec. Dev.
Vol
53(5)
Page
979-989
Author
S. C. Song, Z. Zhang, C. Huffman, J. H. Sim, S. H. Bae, P. Kirsch, P. Majhi, N. Moumen, and B. H. Lee
Year
2006
Date
2006.04.24
doi
10.1109/TED.2006.872700
File
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